DLA SMD-5962-95708 REV E-2013 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 2K X 8-BIT PROM MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YY-MM-DD) APPROVED A Changes in accordance with NOR 5962-R049-96. 96-03-08 M. A. Frye B Changes in accordance with NOR 5962-R070-96. 96-01-31 M. A. Frye C Updated boilerplate for class “T“ changes. - glg 98-12-02 Raymond Monnin D Updated boilerplate. Correction of pa

2、ragraph 1.5 and VOH2conditions column. - glg 99-06-11 Raymond Monnin E Updated drawing to meet current MIL-PRF-38535 requirements. glg 13-07-01 Charles Saffle REV SHEET REV E E E SHEET 15 16 17 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPA

3、RED BY Gary L. Gross DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 STANDARD MICROCIRCUIT CHECKED BY Jeff Bowling http:/www.landandmaritime.dla.mil DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, RADIATION HARDENED, CMOS, 2K X

4、8-BIT PROM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-14 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95708 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E477-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

5、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95708 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q), space applicati

6、on (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in th

7、e PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN shall be as shown in the following example: 5962 R 95708 01 V X C Federal RHA De

8、vice Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are mar

9、ked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type 1/ Generic number 2/ Circuit function Access time 01 HS-6617RH 2K X 8-bit Radiation hardened PROM 120 ns 1.2.3 Device class

10、 designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified

11、in the device manufacturers approved quality management plan 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J CDIP2-T24 24 Dual-in-line package X CDFP4-F24 24 Flat pack 1.2.5 Lead finish.

12、 The lead finish shall be as specified in MIL-PRF-38535 for classes Q, T and V. _ 1/ Device is available in an unprogrammed state only. 2/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 an

13、d MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95708 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 3/ Supply vol

14、tage +7.0 V dc Voltage on any pin with respect to ground -0.3 V dc to VDD+0.3 V dc Maximum power dissipation (PD) 1.25 W 4/ Case X 0.83 W 4/ Lead temperature (soldering, 10 seconds maximum) . +300C Thermal resistance, junction-to-case (JC)(Case J) 6C/W Case X 4C/W Thermal resistance, junction-to-amb

15、ient (JA) (Case J) 40C/W Case X 60C/W Junction temperature (TJ) . +175C Storage temperature range. -65C to +150C Temperature under bias . -55C to +125C 1.4 Recommended operating conditions. Supply voltage (VDD) +4.5 V dc to +5.5 V dc Ground voltage (GND). 0.0 V dc Input high voltage (VIH) +2.4 V dc

16、minimum to VCCInput Low voltage (VIL). 0.0 V dc to +0.8 V dc maximum Case operating temperature range (TC) -55C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 50 - 300 rads(Si)/s) 100 KRads(Si) Dose rate upset . 5 x 108Rads(Si)/sec 5/ Dose rate survivability . 5 x 1011Rads

17、(Si)/sec 5/ Single event phenomenon (SEP) effective SEU linear energy threshold (LET) with no upsets 16 MEV-cm2/mg 5/ SEL linear energy threshold (LET) no latchup . 100 MEV-cm2/mg 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standard

18、s, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. D

19、EPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of thes

20、e documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum le

21、vels may degrade performance and affect reliability. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is based on JAat the following rate: case outline J - - - 25.0 mW/C, case outline X - - - 16.7 mW/C. 5/ Guaranteed by process or desig

22、n, but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95708 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The fol

23、lowing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the D

24、oDISS are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications sho

25、uld be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) JEDEC INTERNATIONAL (JEDEC) JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to JEDEC Solid State Technology Association, 3103 North 10thStreet,

26、 Suite 240-S, Arlington, VA 22201-2107; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 O

27、rder of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1

28、 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535, and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function a

29、s described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal co

30、nnections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 2. When required in screening (see 4.2 herein) or qualif

31、ication conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed. 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not a part of th

32、is drawing. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter

33、 limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part s

34、hall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using t

35、his option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95708 DLA LAND AND MARITI

36、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of c

37、ompliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manu

38、facturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. 3.

39、8 Unprogrammed device delivered to the user. All testing shall be verified through final electrical testing as defined in 3.2.3.1 and table I. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 4. VERIFICATION 4.1 Sampling and inspe

40、ction. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan s

41、hall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturers QM plan, including screening, qualification, and conformance inspection. The performance envelope and reliabil

42、ity information shall be as specified in the manufacturers QM plan. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class T, screening shall

43、be in accordance with the device manufacturers Quality Management (QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q, T and V. a. The burn-in test duration, test condition, and test temperature

44、 or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shal

45、l be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. For device classes Q, T, and V, interim and final elect

46、rical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

47、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95708 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ Group A Device Limits Unit -55C TC +125C subgroups type unless otherwise specified Min Max High level output VOH1 VDD= 4.5 V, IOH= -2.0 mA 1,2,3 All 2.4 V voltage M,D, 1 P,L, R 2/ 3/ V VDD- Output high VOH2 V