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本文(DLA SMD-5962-95719 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTING SCHMITT TRIGGER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体六角反相施密特触.pdf)为本站会员(amazingpat195)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95719 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTING SCHMITT TRIGGER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体六角反相施密特触.pdf

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R047-98. - THL 98-03-13 Raymond L. Monnin B Change limits for IIH, IIL, and ICCin table I. Editorial changes throughout. - CFS 99-04-05 Monica L. Poelking C Correct test symbols for propagation delay time in tab

2、le I. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-02-02 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C B C C C B B C B B B C B C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguye

3、n DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-09-15 MICROCIRC

4、UIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTING SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A SIZE A CAGE CODE 67268 5962-95719 REVISION LEVEL C SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E133-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution

5、 is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing doc

6、uments two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness A

7、ssurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95719 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Draw

8、ing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA

9、 designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS14 Radiation hardened, SOS, high speed CMOS, hex inverting Schmitt trigger, TTL compatible inputs 1.2.3 Device cla

10、ss designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-3

11、8535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X DFP3-F14 14 Flat pack 1.2.5 Lead finish. T

12、he lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CENTER COLUMBUS

13、 COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT). -0.5 V dc to VCC+ 0.5 V dc DC input current, any

14、one input (IIN) 10 mA DC output current, any one output (IOUT). 25 mA Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C. 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): C

15、ase outline C. 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C. 0.66 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN)

16、+0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) . 0.5 V Minimum high level input voltage (VIH) VCC/2 Case operating temperature range (TC) -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf). Unlimited 1.5 Radiation features: Total

17、dose (dose rate = 50 300 rad (Si)/s) 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4). 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 1 x 1010Rads (Si)/s 5/ Latch-up. None 5/ Dose rate survivability 1 x 1012Rads (Si)/s 5/ 1/ Stresses a

18、bove the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the fu

19、ll specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C. 13.5 mW/C Case outline X. 8.6 mW/C 5/ Guar

20、anteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APP

21、LICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Def

22、ense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits.

23、MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available

24、 from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, how

25、ever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufactur

26、ers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A, and as specified herein. 3.1.1 Microcircuit die. For the requi

27、rements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

28、 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. A representative logic diagram shall be

29、 as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduction or

30、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise

31、specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I

32、IA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to

33、space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance wi

34、th MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. Fo

35、r device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an ap

36、proved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein

37、 or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits d

38、elivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for de

39、vice class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for d

40、evice class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CEN

41、TER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max High level output voltage VOHFor all

42、inputs affecting output under test VIN= 2.25 V or 0.5 V For all other inputs All 4.5 V 1, 2, 3 4.40 V VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ 4/ All 1 4.40 For all inputs affecting output under test VIN= 2.75 V or 0.5 V For all other inputs All 5.5 V 1, 2, 3 5.40 VIN= VCCor GND IOH= -50 A M, D, P

43、, L, R 3/ 4/ All 1 5.40 Low level output voltage VOLFor all inputs affecting output under test VIN= 2.25 V or 0.5 V For all other inputs All 4.5 V 1, 2, 3 0.1 V VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ 4/ All 1 0.1 For all inputs affecting output under test VIN= 2.75 V or 0.5 V For all other inputs

44、 All 5.5 V 1, 2, 3 0.1 VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ 4/ All 1 0.1 Positive going threshold voltage VT+All 4.5 V 1, 2, 3 0.50 2.25 V M, D, P, L, R 3/ All 1 0.40 2.25 Negative going threshold voltage VT-All 4.5 V 1, 2, 3 0.50 2.25 V M, D, P, L, R 3/ All 1 0.40 2.25 Hysteresis (VT+- VT-) VT

45、+All 4.5 V 1, 2, 3 0.10 1.40 V M, D, P, L, R 3/ All 1 0.10 1.40 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 RE

46、VISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max Input current high IIHFor input under test, VIN= 5.5 V For all oth

47、er inputs All 5.5 V 1 +0.5 A VIN= VCCor GND 2, 3 +10.0 M, D, P, L, R 3/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs All 5.5 V 1 -0.5 A VIN= VCCor GND 2, 3 -10.0 M, D, P, L, R 3/ All 1 -5.0 Output current high (Source) IOHFor all inputs affecting output under t

48、est, VIN= 4.5 V or 0.0 V All 4.5 V 1 -4.8 mA For all other inputs 2, 3 -4.0 VIN= VCCor GND VOUT= 4.1 V M, D, P, L, R 3/ All 1 -4.0 Output current low (Sink) IOLFor all inputs affecting output under test, VIN= 4.5 V or 0.0 V All 4.5 V 1 4.8 mA For all other inputs 2, 3 4.0 VIN= VCCor GND VOUT= 0.4 V

49、M, D, P, L, R 3/ All 1 4.0 ICCFor inputs under test VIN= VCC- 2.1 V All 5.5 V 1, 2, 3 1.6 mA Quiescent supply current delta, TTL input levels 5/ For all other inputs VIN= VCCor GND M, D, P, L, R 3/ 5/ All 1 1.6 Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 10.0 A 2, 3 250.0 M, D, P, L, R 3/ All 1

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