DLA SMD-5962-95745 REV D-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes made in accordance with NOR 5962-R066-98. - thl 98-03-25 Raymond L. Monnin B Add device class T criteria. Editorial changes throughout. - jak 98-12-07 Monica L. Poelking C Correct the total dose rate and update RHA levels. - LTG 99-04-29

2、Monica L. Poelking D Correct logic diagram on figure 3. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG 04-03-29 Thomas M. Hess REV SHET REV D D D D D D D B B SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV D B C D D C C D D B D B D D OF SHEETS SHEET 1 2 3 4 5 6

3、 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPAR

4、TMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-12 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95745 SHEET 1 OF 23 DSCC FORM 2233

5、 APR 97 5962-E212-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This draw

6、ing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the

7、Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in

8、the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95745 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA des

9、ignator. Device classes Q, T, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash

10、(-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS245 Radiation hardened, SOS, high speed CMOS, non-inverting octal bus transceiver with three-state outputs, TTL compatible inputs 1.2.

11、3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance wi

12、th MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-

13、1835 and as follows: Outline letter Descriptive designator Terminals Package style R CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSN

14、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC)

15、-0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) -65C to +150C Lead temperature (sold

16、ering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case R 24C/W Case X 28C/W Thermal resistance, junction-to-ambient (JA): Case R 72C/W Case X 107C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case R 0.69 W Case X 0.47 W 1.4 Recommended operatin

17、g conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Case operating temperature range (TC). -55C to +125C Input voltage range (VIN) 0 V to VCCOutput voltage range (VOUT). 0 V to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH). VCC/2 Maximum inpu

18、t rise and fall time at VCC= 4.5 V (tr, tf) 500 ns 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rad (Si)/s (Device classes M, Q, and V) . 2 x 105Rads (Si) (Device class T). 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (

19、see 4.4.4.5) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 1 x 1010 Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perfor

20、mance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissi

21、pation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case R. 13.9 mW/C Case X. 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

22、DARD MICROCIRCUIT DRAWING SIZE A 5962-95745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of thi

23、s drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-

24、STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at

25、 http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex

26、t of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T, and V shall be in accordance with MIL-PRF-

27、38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appen

28、dix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535

29、 and herein for device classes Q, T, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth

30、 table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connect

31、ions shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case

32、operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

33、,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages whe

34、re marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with

35、MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

36、quired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compl

37、iance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets

38、, for device classes Q, T, and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T, and V in MIL-PRF-38535 or for device class

39、 M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any

40、change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at

41、the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

42、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A su

43、bgroups Limits 2/ Unit Min Max For all inputs affecting output under test VIN= 2.25 V or 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 V M, D, P, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output under test VIN= 2.75 V or 0.8 V For all other inputs VIN= VCCor GND IOH=

44、-50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, P, L, R 3/ All 5.5 V 1 5.40 For all inputs affecting output under test VIN= 2.25 V or 0.8 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIN= 2.75 V

45、or 0.8 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 A 1 -0.5 For input u

46、nder test, VIN= GND For all other inputs VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95

47、745 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCC Group A subgroups Limits 2/ Unit Min Max 1

48、+1.0 OE = 5.5 V For all other inputs VIN= 0.0 V or 5.5 V VOUT= 5.5 V All 2, 3 +50.0 Three-state output leakage current high IOZHM, D, P, L, R 3/ All 5.5 V 1 +50.0 A 1 -1.0 OE = 5.5 V For all other inputs VIN= 0.0 V or 5.5 V VOUT= 0.0 V All 2, 3 -50.0 Three-state output leakage current low IOZLM, D,

49、P, L, R 3/ All 5.5 V 1 -50.0 A 1 -7.2 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 2, 3 -6.0 Output current high (Source) IOHM, D, P, L, R 3/ All 4.5 V 1 -6.0 mA 1 7.2 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other i