DLA SMD-5962-95751 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R079-98 98-04-06 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00-10-05 Monica L. Poelking C Correct title to more accurately describe the f

2、unction. Update the radiation features in section 1.5 and paragraphs 4.4.41, 4.4.4.4 and 4.4.4.3. Update the boilerplate paragraphs to current requirements as specified in MIL-PRF-38535. - jak 09-09-02 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C C C C C

3、 C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROV

4、ED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, NON-INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-03 AMSC N/A REVISION LEVEL C SIZE A CA

5、GE CODE 67268 5962-95751 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E399-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET

6、2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying

7、 Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95751 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see

8、1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix

9、A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS541 Radiation hardened, SOS, high speed CMOS, non-in

10、verting octal buffer/line driver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the require

11、ments for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator

12、 Terminals Package style R CDIP2-T20 20 Dual-in-line package X CDFP4-F20 20 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitte

13、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN)

14、 -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) . 25 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, ju

15、nction-to-case (JC): Case outline R . 24C/W Case outline X . 28C/W Thermal resistance, junction-to-ambient (JA): Case outline R . 72C/W Case outline X . 107C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline R . 0.69 W Case outline X . 0.47 W 1.4

16、Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 VMinimum high level input voltage (VIH) . VCC/2 Case operating temperature range

17、 (TC) . -55C to +125C Maximum input rise or fall time at VCC= 4.5 V (tr, tf) 500 ns 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg)

18、 5/ Dose rate upset (20 ns pulse) 1 x 1010Rads (Si)/s 5/ Latch-up . None 5/ Dose rate survivability 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.

19、2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide hea

20、t sinking or derate linearly (the derating is based on JA) at the following rate: Case R 13.9 mW/C Case X 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

21、 5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specifie

22、d herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard M

23、icrocircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quick

24、search/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents ar

25、e those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.ast

26、m.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, howev

27、er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer

28、s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1

29、Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A

30、 and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logi

31、c diagram shall be as specified on figure 3. 3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

32、5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prepari

33、ng and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case o

34、perating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufa

35、cturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device

36、classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mar

37、k for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For d

38、evice class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm

39、 that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-

40、PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this

41、 drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall

42、be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitte

43、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise spe

44、cified Devicetype VCCGroup A subgroups Limits 3/ Unit Min Max High level output voltage VOHFor all inputs affecting output under test VIH= 2.25 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 4.5 V 1, 2, 3 4.40 V For all inputs affecting output under test VIH= 2.75 V or VIL= 0.8 V

45、 For all other inputs VIN= VCCor GND IOH= -50 A All 5.5 V 1, 2, 3 5.40 Low level output voltage VOLFor all inputs affecting output under test VIH= 2.25 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOL= 50 A All 4.5 V 1, 2, 3 0.1 V For all inputs affecting output under test VIH= 2.75 V or VIL=

46、 0.8 V For all other inputs VIN= VCCor GND IOL= 50 A All 5.5 V 1, 2, 3 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 5.5 V 1 +0.5 A 2, 3 +5.0 M, D, P, L, R 2/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN=

47、 VCCor GND All 5.5 V 1 -0.5 A 2, 3 -5.0 M, D, P, L, R 2/ All 1 -5.0 Output current high (Source) IOHFor all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 4.5 V 1 -7.2 mA 2, 3 -6.0 M, D, P, L, R 2/ All 1 -6.0 See footnotes at end of table.

48、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95751 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 3/ Unit