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本文(DLA SMD-5962-95771 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS BCD DECADE UP DOWN COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导.pdf)为本站会员(王申宇)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95771 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS BCD DECADE UP DOWN COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导.pdf

1、SRD-59b2-95771 REV A 9 b OL2b58b 02T NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (YYMMDD) Form Approved 98-03-25 OMB No. 0704-0188 ublic Feporng byden fpr.this collection is estimated to avera e 2 hours per response, including e time fo

2、r,rebewing lctnicbons. searchins exisbna data sources. aathenna and maidainna the data needed. and comolebnu and rewewino the b. ADDRESS (Street, Ciy, State,Zp Code) 5. CAGE CODE Defense Supply Center, Columbus 67268 1. ORIGINATOR 3990 East Broad Street Columbus, OH 43216-5000 Last) 67268 i.TYPED NA

3、ME (First, Middle Initial, 7. CAGE CODE ). TITLE OF DOCUMENT MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, MNCHRONOUS BCD DECADE UPIDOWN COUNTER, TTL COMPATIBLE NPUTS, MONOLITHIC SILICON a. CURRENT b. NEW 10. REVISION LETTER A 3. DODAAC 6. NOR NO. 5962-R072-98 8. DOCUMENT NO. 5962-9577

4、1 11.ECPNO. No uses listed. Sheet 1: Revisions Itr column; add “A“. Revisions description column; add Changes in accordance with NOR 5962-R072-98: Revisions date column; add 98-03-25. Revision levei block; add A“. Rev status of sheets; for sheets i, 4, and 20 through 26, add K. Sheet 4: Add new para

5、graph which states; “3.1 .I Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.“ Revision level block; add A. * (x One) Sheets 20 through 26: Add attached appendix A. CONTINUED ON NEXT SHEETS - X (1) Existing document supplemented by the NOR may be used in m

6、anufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. 14. THIS SECTION FOR GOVERNMENT USE ONLY b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VAS c. TYP

7、ED NAME (First, Middle Initial, fast) RAYMOND L. MONNIN DD Form 1695, APR 92 Previous editions are obsolete. d. TITLE CHIEF, MICROELECTRONICS TEAM 15a. ACTIVITY ACCOMPLISHING REVISION DSCC-VAS e. SIGNATURE f. DATE SIGNED (YYMMDD) c. DATE SIGNED RAYMOND L. MONNIN 98-03-25 b. REVISION COMPLETED (Signa

8、ture) (YYMMDD) TIN H. LE 98-03-25 Licensed by Information Handling ServicesAPPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95771 I COLUMBUS, OHIO 43216-5000 I I A I 20 Document No: 5962-95771 Revision: A Sheet: 2 of 8 NOR NO: 5962-R072-98 SIZE STANDARD MICROCIRCUIT DRAWING A DEFENSE SUPPLY CENTER COL

9、UMBUS RRIISION LEVEL 10. SCOPE 5962-95771 SHEET 10.1 ScoDe. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan f

10、or use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (devic

11、e Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: Federal RHA Device Device Die Die Stock class designator type class code De

12、tails designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) / (see 10.2.3) Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device tvpek). The device type(s) shall iden

13、tify the circuit function as follows: Device tvpe Generic number Circuit function O1 10.2.3 Device class desianator. Device class QorV HCTS19O Radiation hardened, SOS, high speed CMOS, synchronous BCD decade up/down counter, TTL compatible inputs. Device reauirements documentation Certification and

14、qualification to the die requirements of MIL-PRF-38535. DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-5762-95773 REV A W 999999b 0326588 9T2 STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 43216-5000 DEFENSE SUPPLY CENTER COLUMBUS APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9577

15、1 SIZE 5962-95771 A REVISION LEVEL SHEET A 21 Document No: 5962-95771 Revision: A Sheet: 3 of 8 NOR NO: 596247072-98 10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function), inter

16、face materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Physical dimensions. Die Types Figure number o1 A- 1 10.2.4.2 Die Bondina Dad locations and Electrical functions. Die Types Figure number o1 A-1 10.2.4.3 Interface Materials.

17、Die Types Figure number o1 A-1 10.2.4.4 Assemblv related information. Die Types Figure number o1 A- 1 10.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended oDeratina conditions. See paragraph 1.4 within the body of this drawing for details. 20

18、. APPLICABLE DOCUMENTS 20.1 Government SDecificationc, standards, bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the

19、 solicitation, form a pari of this drawing to the extent specified herein. Licensed by Information Handling ServicesSMD-5962-95773 REV A 9999996 0326589 839 m 1 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1 . APPENDIX A APPENDIX A

20、 FORMS A PART OF SMD 5962-95771 STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Document No: 5962-95771 Revision: A Sheet: 4 of 8 NOR NO: 5962-R072-98 SIZE A 5962-95771 REVISION LEVEL SHEET A 22 SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated C

21、ircuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. (Copies of the specification, standards, bulletin, and handbook required by manuf

22、acturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2 Order of mecedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shal

23、l take precedence. 30. REQUIREMENTS 30.1 Item Reauirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not

24、 effect the form, fit or function as described herein. 30.2 Desiun, construction and Dhvsical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2.1 Die Phvsical dimensions. The

25、die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bondina pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure A-1. 30.2.4 Assemblv related information. The assembly relate

26、d information shall be as specified in 10.2.4.4 and figure A-1. 30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of thi

27、s document. DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesAPPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95771 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 Document No: 5962-95771 Revision: A Sheet: 5 of 8 NOR NO: 5962-R072-98 SIZE A 5962-95

28、771 REVISION LEVEL SHEET A 23 30.3 Electrical Performance characteristics and Dost- irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electri

29、cal test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table 1. 30.5 Markinq. As a minimum, each unique lot of die, loaded in single or multiple stack o

30、f carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a “QML“ or “Q“ as required by MIL-PRF-38535. 30.6 Certification of compliance. For device

31、 classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall a

32、ffirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit

33、 die delivered to this drawing. 40. QUALITY ASSURANCE PROVISIONS 40.1 Samulina and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in th

34、e QM plan shall not effect the fom, fit or function as described herein. 40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturers QM plan. As a minimum it shall consist of: a) Wafer Lot acceptance for Class V product using t

35、he criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM5004. Licensed by Information Handling Servi

36、ces1 MIL-PRF-38535 and MIL-HDBK-1331. 60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined with 40.3 Conformance inspection. 1 60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML

37、-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels f

38、or device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2,4.4.4.3, and 4.4.4.4. APPENDIX A APPENDIX A FORMS A PA

39、RT OF SMD 5962-95771 50. DIE CARRIER Document No: 5962-95771 Revision: A Sheet: 6 of 8 NOR NO: 5962-R072-98 50.1 Die carrier reauirements. The requirements for the die carrier shall be in accordance with the manufacturers QM plan or as specified in the purchase order by the acquiring activity. The d

40、ie carrier shall provide adequate physical, mechanical and electrostatic protection. STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 60. NOTES SIZE A 5962-95771 RRIISION LEVEL SHEET A 24 60.1 Intended use. Microcircuit die conforming to this drawing are inten

41、ded for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or teleph

42、one (61 4)-692-0674. DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-5962-9577L REV A m 9999996 0126592 323 m APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95771 Document No: 5962-95771 Revision: A Sheet: 7 of 8 NOR NO: 5962-R072-98 FIGURE A-1 o DIE PHYSICAL DIMENSIONS Die Size:

43、Die Thickness: 21 90 x 2650 microns. 21 +/- 2 mils. DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal metallization layout and alphanumeric information contained within this diagram

44、 may or may not represent the actual circuit defined by this SMD. o B I I l I J NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1). STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 SIZE IAl I 5962-95771 I REVISION LEVEL

45、I SHEET 25 A APR 97 Licensed by Information Handling ServicesAPPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95771 Document No: 5962-95771 Revision: A Sheet: 8 of 8 NOR NO: 5962-R072-98 1l.OkA +I- 1kA o INTERFACE MATERIALS Top Metallization: SiAI Backside Metallization None Glassivation Type: si02 Th

46、ickness 13.0kA +I- 2.6kA Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator Special assembly instructions: Bond pad #16 (VCC) first. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 -5000 A I 5962-95771 I I 26 LFEL DCCFF

47、OREZ34 APR 97 Licensed by Information Handling ServicesSMD-5762-95773 REV A m 9999996 0326594 IT6 m STANDARD MICROCIRCUIT DRAWING BULLETIN Standard Vendor microcircuit drawing CAGE PIN number DATE: 98-03-25 Vendor similar PIN 11 Approved sources of supply for SMD 5962-95771 are listed below for imme

48、diate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submi

49、tted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML- 38535. I 5962R9577101V9A 1 34371 1 HCTS19OHMSR I - II Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuraci

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