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本文(DLA SMD-5962-95774 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半.pdf)为本站会员(王申宇)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95774 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R074-98 - thl. 98-04-06 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 04-06-18 Thomas M. Hess REV SHET REV B B B B B B B B SHEET 15 16 17 18 19 20 21 22

2、 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking TH

3、IS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-15 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A

4、CAGE CODE 67268 5962-95774 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E127-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEE

5、T 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifyi

6、ng Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95774 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (s

7、ee 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, append

8、ix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS283 Radiation hardened, SOS, high speed CMOS, 4-b

9、it binary adder with fast carry, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 comp

10、liant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E C

11、DIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

12、 MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output v

13、oltage range (VOUT). -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN) 10 mA DC output current, any one output (IOUT). 25 mA Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline E . 24C/W

14、 Case outline X . 29C/W Thermal resistance, junction-to-ambient (JA): Case outline E . 73C/W Case outline X . 114C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline E . 0.68 W Case outline X . 0.44 W 1.4 Recommended operating conditions. 2/ 3/ Sup

15、ply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V to VCCOutput voltage range (VOUT) +0.0 V to VCCMaximum low level input voltage (VIL) . 0.8 V Minimum high level input voltage (VIH) VCC/2 Case operating temperature range (TC) -55C to +125C Maximum input rise and fall ti

16、me at VCC= 4.5 V (tr, tf). 500 ns Radiation features: Total dose . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse). 1 x 1010Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability. 1 x 10

17、12Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified

18、herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline E. 13.7 mW/C Ca

19、se outline X. 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET

20、4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the s

21、olicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTME

22、NT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins

23、Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a s

24、pecific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the Q

25、M plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit d

26、ie, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The

27、case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switch

28、ing waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits.

29、 Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

30、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for eac

31、h subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not

32、marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/complian

33、ce mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shal

34、l be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein)

35、. The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535,

36、 appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for d

37、evice class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring a

38、ctivity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be i

39、n microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FOR

40、M 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Device type VCCGroup A subgroups Limits 2/ Unit Test conditions 1/ -55C TC +125C unless otherwise specified Min Max For all inputs affecting output under test, VIN= 2.25 V or 0.8 V For all other inputs, VIN= VCCor GND IOH= -5

41、0 A All 1, 2, 3 4.40 M, D, P, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output under test, VIN= 2.75 V or 0.8 V For all other inputs, VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, P, L, R 3/ All 5.5 V 1 5.40 V For all inputs affecting output under test, VIN= 2

42、.25 V or 0.8 V For all other inputs, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test, VIN= 2.75 V or 0.8 V For all other inputs, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ All 5.5 V 1 0.1

43、V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs, VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 1 -0.5 For input under test, VIN= GND For all other inputs, VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A 1 -4.

44、8 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor GND All 2, 3 -4.0 Output current high (source) IOH4/ VOUT= 4.1 V M, D, P, L, R 3/ All 4.5 V 1 -4.0 1 4.8 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor

45、 GND All 2, 3 4.0 Output current low (sink) IOL4/ VOUT= 0.4 V M, D, P, L, R 3/ All 4.5 V 1 4.0 mA 1 40.0 VIN= VCCor GND All 2, 3 750 Quiescent supply current ICCM, D, P, L, R 3/ All 5.5 V 1 750 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted with

46、out license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95774 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits 2/ Unit Test Symbol Test conditions 1/ -55C TC +125C unle

47、ss otherwise specified Device type VCCGroup A subgroups Min Max For inputs under test VIN= VCC 2.1 V For all other inputs All 1, 2, 3 1.6 Quiescent supply current delta, TTL input levels ICC5/ VIN= VCCor GND M, D, P, L, R 3/ All 5.5 V 1 1.6 mA Input capacitance CIN4 10 4 250 Power dissipation capaci

48、tance CPD6/ VIH= 5.0 V, VIL= 0.0 V f = 1 MHz See 4.4.1c All 5.0 V 5, 6 315 pF VIH= 2.25 V, VIL= 0.8 V See 4.4.1b All 7, 8 L H Functional test 7/ M, D, P, L, R 3/ All 4.5 V 7 L H 9 2.0 23.0 CL= 50 pF RL= 500 All 10, 11 2.0 27.0 tPLH18/ See figure 4 M, D, P, L, R 3/ All 4.5 V 9 2.0 27.0 ns 9 2.0 26.0 CL= 50 pF RL= 500 All 10, 11 2.0 30.0 Propagation delay time, CIN to S0 tPHL18/ See figure 4 M, D, P, L, R 3/ All 4.5 V 9 2.0 30.0 ns 9 2.0 27.0 CL= 50 pF RL= 500 All 10, 11 2.0 31.0 tPLH28/ See figure 4 M, D, P, L, R 3/ All 4.5 V 9 2.0 31.0 ns 9 2.0 30.0 CL= 50 pF RL= 500 All 10, 1

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