DLA SMD-5962-95775 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING HEX BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC.pdf

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-03-27Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R075-98a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-957759. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS,NON-INVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE10. REVISION LETT

6、ER11. ECP NO.No users listed.OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICONa. CURRENT-b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R075-98“

7、.Revisions date column; add “98-03-27“.Revision level block; add “A“.Rev status of sheets; for sheets 1, 4, and 17 through 23, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; ad

8、d “A“.Sheets 17 through 23: Add attached appendix A.CONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian

9、 of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VASc. TYPED NAME (First, Middle Initial, Last)RAYMOND L. MONNINd. TITLECHIEF, MICROELECTRONICS TEAMe. SIGNATURERAYMOND L. MONNINf. DATE SIGNED(YYMMDD)98-03-2715a. ACT

10、IVITY ACCOMPLISHING REVISIONDSCC-VASb. REVISION COMPLETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)98-03-27DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-9577

11、5DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET17DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-95775 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcirc

12、uit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire d

13、esigns in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance

14、 (RHA) levels are reflected in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5962 R 95775 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA d

15、esignator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 HCTS365 Radiation hardened,

16、 SOS,high speed CMOS, non-inverting hex buffer/line driverwith three-state outputs,TTL compatible inputs.10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reprod

17、uction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95775DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET18DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962

18、-95775 Sheet: 3 of 8 10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to

19、 this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01 A-110.2.4.2 Die Bonding pad locations and Electrical functions.Die Types Figure number01 A-110.2.4.3 Interface Materials.Die Types Figure number01 A-110.2.4.4 Assembly related information.Die Types Figure number01 A-110.3 Abso

20、lute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specif

21、ied, the followingspecifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproducti

22、on or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95775DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET19DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-957

23、75 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.(Copies o

24、f the specification, standards, bulletin, and handbook required by manufacturers in connection with specificacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this

25、 drawing and the references cited herein, the textof this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Qual

26、ity Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specifiedin MIL-PRF-38535 and the manufacturers QM plan, for device

27、classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure

28、A-1.30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table. The truth table shall be as defined withi

29、n paragraph 3.2.3 of the body of this document.30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body ofthis document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCU

30、IT DRAWINGSIZEA5962-95775DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET20DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-95775 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irr

31、adiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and para

32、metric testing sufficientto make the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the ce

33、rtification mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufact

34、urer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PR

35、F-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For dev

36、ice classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or function as described herein.40.2 Screening. For device clas

37、ses Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal v

38、isual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95775DEFENSE

39、 SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET21DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-95775 Sheet: 6 of 8 40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required onl

40、y for parts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within parag

41、raphs 4.4.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturers QM planor as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physi

42、cal, mechanical andelectrostatic protection.60. NOTES60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications andlogis

43、tics purposes.60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Source

44、s of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and haveagreed to this drawing.Provided by IHSNot for ResaleNo reproduction or netw

45、orking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95775DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET22DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-95775 Sheet:

46、7 of 8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 2680 x 2740 microns.Die Thickness: 21 +/- 2 mils.x DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and electrical functions of the bonding pads. The internalmetallization layout and alpha

47、numeric information contained within this diagram may or may not represent the actual circuitdefined by this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

48、-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95775DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET23DSCC FORM 2234APR 97Document No: 5962-95775Revision: AAPPENDIX A NOR No: 5962-R075-98APPENDIX A FORMS A PART OF SMD 5962-95775 Sheet: 8 of 8 o INTERFACE MATERIALSTop Metallizati

49、on: SiAl 11.0kA +/- 1kABackside Metallization NoneGlassivationType: SiO2Thickness 13.0kA +/- 2.6kASubstrate: Silicon on Sapphire (SOS)o ASSEMBLY RELATED INFORMATIONSubstrate Potential: InsulatorSpecial assemblyinstructions: Bond pad #16 (VCC) first.Provided by IHSNot for ResaleNo reproduction or networking per