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本文(DLA SMD-5962-95783 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT EXCLUSIVE OR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输入排外硅单片电路线型微电路》.pdf)为本站会员(bowdiet140)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95783 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT EXCLUSIVE OR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输入排外硅单片电路线型微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes made in accordance with NOR 5962-R121-98 98-06-12 Raymond L. Monnin B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-02-26 Thomas M. Hess REV SHET REV B B B B B B B B SHEET 1

2、5 16 17 18 19 20 21 22 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS

3、AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-09-15 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268

4、 5962-95783 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E155-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPP

5、LY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead

6、 finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95783 01 V X C Federal stock class designator RHA designato

7、r (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator.

8、Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit f

9、unction 01 HCS86 Radiation hardened, SOS, high speed CMOS, quad 2-input exclusive OR gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to th

10、e requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive d

11、esignator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted

12、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -

13、0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction

14、-to-case (JC): Case C 24C/W Case X 30C/W Thermal resistance, junction-to-ambient (JA): Case C 74C/W Case X 116C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case C 0.68 W Case X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V

15、 dc to +5.5 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) 0 V to VCCOutput voltage (VOUT). 0 V to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCMaximum input rise and fall time at VCC= 4.5 V (tr, tf) 100 ns/V Radi

16、ation features: Total dose . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010 Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 2. APPLICABLE D

17、OCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Inde

18、x of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Ext

19、ended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless o

20、therwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C. 13.5 mW/C Case X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction o

21、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 -

22、 Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Stan

23、dardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersed

24、es applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Ma

25、nagement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit

26、 die. For requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for

27、device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall

28、be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and

29、 postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requ

30、irements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking

31、of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

32、Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-

33、38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance.

34、For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an

35、approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and here

36、in or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits

37、 delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for

38、device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for

39、 device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY C

40、ENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max For all inputs affecting output und

41、er test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 V M, D, P, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, P, L,

42、R 3/ All 5.5 V 1 5.40 For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOL= 50 A All 1,

43、2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 A 1 -0.5 For input under test, VIN= GND For all other inputs VIN= VCCor GND All 2,

44、 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 R

45、EVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCC Group A subgroups Limits 2/ Unit Min Max 1 -4.8 For all inputs affecting output under test VIN= 4.5 V or

46、0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 2, 3 -4.0 Output current high (Source) IOHM, D, P, L, R 3/ All 4.5 V 1 -4.0 mA 1 4.8 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V All 2, 3 4.0 Output current low (Sink) IOLM, D

47、, P, L, R 3/ All 4.5 V 1 4.0 mA 1 10.0 VIN= VCCor GND All 2, 3 200 Quiescent supply current ICCM, D, P, L, R 3/ All 5.5 V 1 200 A Input capacitance CIN5.0 V 4 10 pF 4 33 Power dissipation capacitance 4/ CPD VIH= 5.0 V VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 5, 6 54 pF VIH= 3.15 V, VIL= 1.35 V See

48、 4.4.1b All 7, 8 L H Functional test 5/ M, D, P, L, R 3/ All 4.5 V 7 L H 9 2.0 18.0 CL= 50 pF RL= 500 See figure 4 All 10, 11 2.0 20.0 tPHLM, D, P, L, R 3/ All 4.5 V 9 2.0 20.0 9 2.0 20.0 CL= 50 pF RL= 500 See figure 4 All 10, 11 2.0 22.0 Propagation delay time, An or Bn to Yn 6/ tPLHM, D, P, L, R 3/ All 4.5 V 9 2.0 22.0 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95783 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM

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