DLA SMD-5962-95785 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 8-BIT SERIAL-IN PARALLEL-OUT SHIFT REGISTER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体8-BIT连续或平行输出寄存器硅.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes made in accordance with NOR 5962-R156-98. 98-07-31 Monica L. Poelking B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-03-23 Thomas M. Hess REV SHET REV B B B B B B B B B SHE

2、ET 15 16 17 18 19 20 21 22 23 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAW

3、ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-22 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 8-BIT SERIAL-IN/PARALLEL-OUT SHIFT REGISTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SI

4、ZE A CAGE CODE 67268 5962-95785 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E194-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B

5、 SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Iden

6、tifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95785 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator

7、Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, app

8、endix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS164 Radiation hardened, SOS, high speed CMOS, 8

9、-bit serial-in/parallel-out shift register 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-J

10、AN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 1

11、4 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

12、UIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage ran

13、ge (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case C 24C/W Case X 30C/W Therma

14、l resistance, junction-to-ambient (JA): Case C 74C/W Case X 116C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case C 0.68 W Case X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Case operating temperature ran

15、ge (TC). -55C to +125C Input voltage range (VIN) 0 V to VCCOutput voltage range (VOUT). 0 V to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCMaximum input rise and fall time at VCC= 4.5 V (tr, tf) 500 ns Radiation features: Total dose . 2 x 105R

16、ads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010 Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification

17、, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -

18、 Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced

19、to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)

20、at the following rate: Case C. 13.5 mW/C Case X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

21、 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MI

22、L-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In th

23、e event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The i

24、ndividual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The indiv

25、idual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimension

26、s. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. T

27、he terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as

28、specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirrad

29、iation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Mar

30、king. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA

31、 product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device

32、 classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

33、A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of

34、 this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source

35、of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requ

36、ired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 her

37、ein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required docum

38、entation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Resal

39、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1

40、/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 V M, D, P, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output unde

41、r test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, P, L, R 3/ All 5.5 V 1 5.40 For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 3/

42、All 4.5 V 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 2, 3 +5.0 Inpu

43、t current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 A 1 -0.5 For input under test, VIN= GND For all other inputs VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted w

44、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwi

45、se specified Device type VCC Group A subgroups Limits 2/ Unit Min Max 1 -4.8 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 2, 3 -4.0 Output current high (Source) IOHM, D, P, L, R 3/ All 4.5 V 1 -4.0 mA 1 4.8 For all inputs affectin

46、g output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V All 2, 3 4.0 Output current low (Sink) IOLM, D, P, L, R 3/ All 4.5 V 1 4.0 mA 1 40.0 VIN= VCCor GND All 2, 3 750 Quiescent supply current ICCM, D, P, L, R 3/ All 5.5 V 1 750 A Input capacitance CIN5.0 V 4 10 pF 4

47、 135 Power dissipation capacitance 4/ CPDVIH= 5.0 V VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 5, 6 165 pF VIH= 3.15 V, VIL= 1.35 V See 4.4.1b All 7, 8 L H Functional test 5/ M, D, P, L, R 3/ All 4.5 V 7 L H 9 2.0 32.0 CL= 50 pF RL= 500 See figure 4 All 10, 11 2.0 37.0 tPHL1M, D, P, L, R 3/ All 4.5

48、V 9 2.0 37.0 9 2.0 32.0 CL= 50 pF RL= 500 See figure 4 All 10, 11 2.0 37.0 Propagation delay time, CP or Qn 6/ tPLH1M, D, P, L, R 3/ All 4.5 V 9 2.0 37.0 ns 9 2.0 32.0 CL= 50 pF RL= 500 See figure 4 All 10, 11 2.0 37.0 Propagation delay time, MR to Qn 6/ tPHL2M, D, P, L, R 3/ All 4.5 V 9 2.0 37.0 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95785 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Elec