DLA SMD-5962-95798 REV B-2004 MICROCIRCUIT LINEAR POWER DRIVER HIGH SPEED MONOLITHIC SILICON《高速功率驱动器线型微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate updated to reflect current requirements. -lgt 00-05-25 Raymond Monnin B Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. -rrp 04-07-19 Raymond Monnin REV SHET REV SHET REV STATUS REV B B B B B B B B B OF SHEETS SHEET

2、 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY SANDRA ROONEY COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, POWER DRIV

3、ER, HIGH SPEED, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-17 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95798 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E344-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

4、 from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95798 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) an

5、d space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following exa

6、mple: 5962 - 95798 01 M P A Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 s

7、pecified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identi

8、fy the circuit function as follows: Device type Generic number Circuit function 01 UC1705 High speed power driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor

9、self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outl

10、ine letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSN

11、ot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95798 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage, (VS). 40 V dc Colle

12、ctor supply voltage, (VC) 40 V dc Output current (source or sink): Steady-state. 500 mA Peak transient 1.0 A Capacitive discharge energy 15 J Digital inputs 5.5 V dc Power dissipation (PD), TA= +25C . 1 W Thermal resistance, junction-to-ambient (JA): Case P . 160C/W Case 2 70C/W Thermal resistance,

13、junction-to-case (JC): Case P . 26C/W Case 2 18C/W Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C 1.4 Recommended operating conditions. Operating ambient temperature range -55C to +125C Supply voltage (VS, VC) +20 V dc 2. APPLICABLE DOCUMENTS 2.1 Government

14、specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MI

15、L-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microci

16、rcuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of

17、 precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the ab

18、solute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95798 DEF

19、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manuf

20、acturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.

21、 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance w

22、ith 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the elec

23、trical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests

24、 for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option

25、 of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/

26、compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of complia

27、nce shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2

28、 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PR

29、F-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chan

30、ge for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acq

31、uiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing sh

32、all be in microcircuit group number 77 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95798 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSC

33、C FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C VS= VC=20 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current ICVC= 40 V, outputs low 1, 2, 3 01 4 mA Supply leakage current ILVS= 0 V, VC= 30 V 1, 2, 3 0

34、1 0.1 mA Digital input low level VIL1, 2, 3 01 0.8 V Digital input high level VIH1, 2, 3 01 2.2 V Input current IINVI= 0 V 1, 2, 3 01 -1 mA Input leakage current IINLVI= 5 V 1, 2, 3 01 0.1 mA Output high saturation Voltage (VC- VO) VCO(SAT) IO= -50 mA 1, 2, 3 01 2.0 V IO= -500 mA 2.5 Output low satu

35、ration voltage VO(SAT) IO= 50 mA 1, 2, 3 01 0.4 V IO= 500 mA 2.5 Rise time delay tr(delay) Inverted and non-inverted input to output, CL= 0 nF 1/ 9 01 120 ns Fall time delay tf(delay) Inverted and non-inverted input to output, CL= 0 nF 1/ 9 01 90 ns Rise time (10% to 90%) 2/ trCL= 2.2 nF 3/ 9 01 80

36、ns Fall time (90% to 10%) 2/ tfCL= 2.2 nF 3/ 9 01 80 ns Cross-conduction current spike duration ItCL= open, output rise 3/ 9 01 25 ns CL= open, output fall 3/ 0 Functional test FT See 4.4.1c 7, 8 01 1/ Delays measured from inverting input to output is tested, non-inverted input to output is guarante

37、ed by design, but not 100% tested in production. 2/ From the inverted and non-inverted inputs to output. 3/ Parameter is guaranteed by design, but not 100% tested in production. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAW

38、ING SIZE A 5962-95798 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outline P 2 Terminal number Terminal symbol 1 VSLOGIC GND 2 VCINV. IN 3 N/C N.I. IN 4 OUT N/C 5 PWR GND N/C 6 LOGIC GND N/C 7 INV. IN N/C 8 N.I. IN N/C 9

39、 N/C 10 - VS11 - N/C 12 - N/C 13 - N/C 14 - N/C 15 - VC16 - OUT17 - PWR GND 18 - N/C 19 - N/C 20 - N/C FIGURE 1. Terminal connections. INV. IN N.I. IN OUT H H LL H H H L L L L L FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-ST

40、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-95798 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535

41、or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For d

42、evice classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices

43、prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prep

44、aring or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table I

45、I herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under d

46、ocument revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable,

47、 in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4

48、3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified he