DLA SMD-5962-95804 REV B-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL 2-TO-4 LINE DECODER DEMULTIPLEXER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 双重2到4行解码器或信号分离器 硅单片电.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R131-98. - THL 98-07-14 Raymond L. Monnin B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 05-08-16 Thomas M. Hess REV SHET REV B B B B B B B B SHEET

2、 15 16 17 18 19 20 21 22 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAW

3、ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-31 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 2-TO-4 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A

4、CAGE CODE 67268 5962-95804 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E448-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEE

5、T 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifyi

6、ng Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95804 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase ou

7、tline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix

8、A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS139 Radiation hardened, SOS, high speed CMOS, dual 2-

9、to-4 line decoder/demultiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class le

10、vel B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-l

11、ine X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

12、 SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) .

13、 -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 35 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline E 24C/W Case outline X 29C/

14、W Thermal resistance, junction-to-ambient (JA): Case outline E 73C/W Case outline X 114C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline E 0.68 W Case outline X 0.44 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V

15、 dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise or fall time at VCC= 4.5 V

16、 (tr, tf) 500 ns 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rad (Si)/s) 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si)/s 5/ Latch-up No

17、ne 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ Th

18、e limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the follow

19、ing rate: Case outline E . 13.7 mW/C Case outline X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

20、 OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of

21、these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elec

22、tronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Sta

23、ndardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, superse

24、des applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality M

25、anagement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircui

26、t die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein

27、 for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram s

28、hall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduct

29、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless oth

30、erwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in

31、table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations,

32、the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, a

33、ppendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q

34、and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of su

35、pply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device clas

36、s M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this dr

37、awing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M,

38、 DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M dev

39、ices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-

40、3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ UnitMin Max High level output voltage VOH For all inputs affecting output under test

41、 VIN= 3.15 V or 1.35 V For all other inputsAll 4.5 V 1, 2, 3 4.40 V VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 4.40 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 5.40 VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 5.40 Low level outpu

42、t voltage VOL For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs All 4.5 V 1, 2, 3 0.1 V VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ All 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 0.1 VIN= VCCor GND I

43、OL= 50 A M, D, P, L, R 3/ All 1 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 5.5 V 1 +0.5 A 2, 3 +5.0 M, D, P, L, R 3/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN= VCCor GND All 5.5 V 1 -0.5 A 2, 3 -5.0

44、 M, D, P, L, R 3/ All 1 -5.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95804 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 22

45、34 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Limits 2/ Unit Min Max All 4.5 V 1 -7.2 mA For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inpu

46、ts 2, 3 -6.0 Output current high (Source) IOH4/ VIN= VCCor GND VOUT= 4.1 V M, D, P, L, R 3/ All 1 -6.0 All 4.5 V 1 7.2 mA For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs 2, 3 6.0 Output current low (Sink) IOL4/ VIN= VCCor GND VOUT= 0.4 V M, D, P, L, R 3/ All 1 6.

47、0 Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 40.0 A 2, 3 750.0M, D, P, L, R 3/ All 1 750.0Input capacitance CINAll 5.0 V 4 10.0 pF All 5.0 V 4 75.0 pF Power dissipation capacitance CPD5/ VIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c 5, 6 156.0VIH= 3.15 V, VIL= 1.35 V See 4.4.1b All 4.5 V

48、7, 8 L H Functional test 6/ M, D, P, L, R 3/ All 7 L H All 4.5 V 9 2.0 24.0 ns CL= 50 pF RL= 500 See figure 4 10, 11 2.0 27.0 Propagation delay time, mA0 or mA1 to mYn tPLH1, tPHL17/ M, D, P, L, R 3/ All 9 2.0 27.0 All 4.5 V 9 2.0 24.0 ns CL= 50 pF RL= 500 See figure 4 10, 11 2.0 27.0 Propagation de

49、lay time, mE to mYn tPLH2, tPHL27/ M, D, P, L, R 3/ All 9 2.0 27.0 9 15.0 Output transition time tTHL, tTLH8/ CL= 50 pF RL= 500 See figure 4 All 4.5 V 10, 11 22.0 ns See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDAR