DLA SMD-5962-95806 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS BCD DECADE SYNCHRONOUS COUNTER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 二进制编码的十进制同步技计数器硅单片电路线型微电路》.pdf

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-07-14Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directoratefor Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to theOffice of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R128-98a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-958069. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS,BCD DECADE SYNCHRONOUS COUNTER, MONOLITHIC SILICON10. REVISION LETTER1

6、1. ECP NO.No users listed.a. CURRENT-b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R128-98“.Revisions date column; add “98-07-14“.Revision level

7、 block; add “A“.Rev status of sheets; for sheets 1, 4, and 18 through 24, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 18 through 24: Add attached appendix A.C

8、ONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and fur

9、nish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VASc. TYPED NAME (First, Middle Initial, Last)RAYMOND L. MONNINd. TITLECHIEF, MICROELECTRONICS TEAMe. SIGNATURERAYMOND L. MONNINf. DATE SIGNED(YYMMDD)98-07-1415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VASb. REVISION COMPL

10、ETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)98-07-14DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5

11、000REVISION LEVELASHEET18DSCC FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacture

12、rs List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devicesusing chip and wire designs in accordance with MIL-PRF-38534 are specified

13、 herein. Two product assurance classesconsisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part orIdentification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The

14、PIN shall be as shown in the following example:5962 R 95806 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die

15、shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 HCS160 Radiation hardened, SOS,high speed CMOS, BCDdecade synchronous counter.10

16、.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFE

17、NSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET19DSCC FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 3 of 8 10.2.4 Die Details. The die details designation shall be a unique letter which designa

18、tes the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01 A-110.2.4.2 Die Bonding pad locat

19、ions and Electrical functions.Die Types Figure number01 A-110.2.4.3 Interface Materials.Die Types Figure number01 A-110.2.4.4 Assembly related information.Die Types Figure number01 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operat

20、ing conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the issue listed in that issue of th

21、e Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE

22、SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET20DSCC FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, Gene

23、ral Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specifi

24、cacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, thetext of this drawing shall take precedence.30. REQUIREMENTS30.

25、1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as desc

26、ribed herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be asspecified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specifie

27、d in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall beas specified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and o

28、n figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document.30.2.6 Radiation exposure circuit. The radiation exposure ci

29、rcuit shall be as defined within paragraph 3.2.6 of the body ofthis document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET21DSCC

30、FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and

31、 post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testingsufficient to make the packaged die capable of meeting the electrical performance requirement

32、s in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustomer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PINlisted in 10.2 herein. The certification mark

33、 shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance

34、 submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as requir

35、ed for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be inaccordance with MIL-PRF-38535 or as

36、modified in the device manufacturers Quality Management (QM) plan. Themodifications in the QM plan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM pla

37、n. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010or the alternate

38、procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET22DSCC FORM 2234APR 97Document No: 5962

39、-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 6 of 8 40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes

40、Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements. The re

41、quirements for the die carrier shall be in accordance with the manufacturers QM planor as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanicaland electrostatic protection.60. NOTES60.1 Intended use. Microcircuit die conforming to this

42、 drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications andlogistics purposes.60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216

43、-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-3853

44、5. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA andhave agreed to this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE SUPPLY CE

45、NTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET23DSCC FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 7 of 8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 2650 x 2190 microns.Die Thickness: 21 +/- 2 mils.G01 D

46、IE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and electrical functions of the bonding pads. The internalmetallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuitdefined by

47、this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95806DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REV

48、ISION LEVELASHEET24DSCC FORM 2234APR 97Document No: 5962-95806Revision: AAPPENDIX A NOR No: 5962-R128-98APPENDIX A FORMS A PART OF SMD 5962-95806 Sheet: 8 of 8 o INTERFACE MATERIALSTop Metallization: SiAl 11.0kA +/- 1kABackside Metallization NoneGlassivationType: SiO2Thickness 13.0kA +/- 2.6kASubstrate: Silicon on Sapphire (SOS)o ASSEMBLY RELATED INFORMATIONSubstrate Potential: InsulatorSpecial assemblyinstructions: Bond pad #16 (VCC) first.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETINDATE: 98-07-