DLA SMD-5962-95812 REV D-2013 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS DUAL DPST ANALOG SWITCHES MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and Appendix A for microcircuit die. Changes in accordance with N.O.R. 5962-R014-98. 97-12-21 Raymond Monnin B Make changes to boilerplate and add device class T. - ro 98-12-03 Raymond Monnin C Update drawing to current requir

2、ements. Delete paragraphs 4.4.4.2 and 4.4.4.3. Editorial changes throughout. drw 06-08-15 Raymond Monnin D Add device type 04. Delete paragraph 4.4.4.2 dose rate burnout and Table III Irradiation test connections. - ro 13-05-01 C. Saffle REV SHEET REV D D D D SHEET 15 16 17 18 REV STATUS REV D D D D

3、 D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT

4、 OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR RADIATION HARDENED CMOS, DUAL, DPST ANALOG SWITCHES, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-11-14 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95812 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E286-13 Pr

5、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assu

6、rance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When av

7、ailable, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN

8、 is as shown in the following example: 5962 R 95812 01 V C C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA m

9、arked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS302RH Radiation har

10、dened DI, dual DPST CMOS switch 02 HS306RH Radiation hardened DI, dual DPST CMOS switch 03 HS384RH Radiation hardened DI, dual DPST CMOS switch 04 HS302EH Radiation hardened DI, dual DPST CMOS switch 1.2.3 Device class designator. The device class designator is a single letter identifying the produc

11、t assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The

12、 case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line E CDIP2-T16 16 Dual-in-line X CDFP3-F14 14 Flat package Y CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-P

13、RF-38535 for device classes Q, T, and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maxim

14、um ratings. 1/ Supply voltage between +V and -V 44 V Supply voltage between +V and ground . 22 V Supply voltage between -V and ground . 22 V Digital input overvoltage : +VA. +VSUPPLY+ 4 V -VA-VSUPPLY- 4 V Analog input overvoltage : +VS. +VSUPPLY+ 1.5 V -VS-VSUPPLY- 1.5 V Continuous current, S or D .

15、 10 mA Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max) 40 mA Storage temperature range -65C to +150C Maximum package power dissipation at 125C (PD) 2/: Case outlines C and E 0.71 W Case outlines X and Y 0.48 W Thermal resistance, junction-to-case (JC): Case outlines C and E 19C/W Ca

16、se outlines X and Y 17C/W Thermal resistance, junction-to-ambient (JA): Case outlines C and E 70C/W Case outlines X and Y 105C/W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Operating supply voltage (VSUPPLY) . 15 V Ambient op

17、erating temperature range (TA) -55C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 50 300 rads(Si)/s) : Device types 01, 02, and 03 100 krads(Si) 3/ Device type 04 100 krads(Si) 4/ Maximum total dose available (dose rate .010 rad(Si)/s): Device type 04 50 krads(Si) 4/ Latc

18、h up immune . No latch up 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capacity, provide heat sink or derate linearl

19、y (the derating is based on JA) at the following rates: Case outlines C and E . 14.3 mW/C Case outlines X and Y . 9.5 mW/C 3/ Device types 01, 02, and 03 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. However, radiation end point limits for the

20、noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 4/ Device type 04 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of

21、 100 krads(Si) and condition D to a maximum total dose of 50 krads(Si). Lot acceptance testing is performed in accordance with MIL-PRF-38535, Appendix B, technology conformance inspection (TCI) group E, subgroup 2. 5/ Devices use dielectrically isolated (DI) technology and latch up is physically not

22、 possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specifica

23、tion, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-385

24、35 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Dra

25、wings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict betwe

26、en the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements

27、 for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requ

28、irements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in acco

29、rdance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under docum

30、ent revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter li

31、mits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for

32、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA

33、 +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max “Switch on” resistance +RDSVD= 10 V, IS= -10 mA 1 All 50 S1/S2/S3/S4 2, 3 75 M,D,P,L,R 2/ 1 60 -RDSVD= -10 V, IS= 10 mA 1 50 S1/S2/S3/S4 2, 3 75 M,D,P,L,R 2/ 1 60 Leakage current into the +IS(OFF)VS= +14 V, VD= -14 V

34、 1 All -2 +2 nA source terminal of an S1/S2/S3/S4 2, 3 -100 +100 “OFF” switch M,D,P,L,R 2/ 1 -100 +100 -IS(OFF)VS= -14 V, VD= +14 V 1 -2 +2 S1/S2/S3/S4 2, 3 -100 +100 M,D,P,L,R 2/ 1 -100 +100 Leakage current into the +ID(OFF)VD= -14 V, VS= +14 V 1 All -2 +2 nA drain terminal of an S1/S2/S3/S4 2, 3 -

35、100 +100 “OFF” switch M,D,P,L,R 2/ 1 -100 +100 -ID(OFF)VD= +14 V, VS= -14 V 1 -2 +2 S1/S2/S3/S4 2, 3 -100 +100 M,D,P,L,R 2/ 1 -100 +100 Leakage current from an +ID(ON)VD= VS= +14 V 1 All -2 +2 nA “ON” driver into the S1/S2/S3/S4 2, 3 -100 +100 switch (Drain and M,D,P,L,R 2/ 1 -100 +100 Source) -ID(O

36、N)VD= VS= -14 V 1 -2 +2 S1/S2/S3/S4 2, 3 -100 +100 M,D,P,L,R 2/ 1 -100 +100 Low level input address IALAll channels VA= 0.8 V 1, 2, 3 01, 03, -1 +1 A current M,D,P,L,R 2/ 1 04 -1 +1 All channels VA= 3.5 V 1, 2, 3 02 -1 +1 M,D,P,L,R 2/ 1 -1 +1 High level input address IAHAll channels VA= 4.0 V 1, 2,

37、3 01, 03, -1 +1 A current M,D,P,L,R 2/ 1 04 -1 +1 All channels VA= 11 V 1, 2, 3 02 -1 +1 M,D,P,L,R 2/ 1 -1 +1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND

38、MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Positive supply current +I All channels

39、VA= 0.8 V 1 01, 03, 10 A 2, 3 04 100 M,D,P,L,R 2/ 1 100 VA1= 0 V, VA2= 4.0 V 1 0.5 mA VA1= 4.0 V, VA2= 0 V 2, 3 1 M,D,P,L,R 2/ 1 1 All channels VA= 0 V, 1 02 10 A 15 V 2, 3 100 M,D,L,R 2/, All channels 1 100 VA= 0 V M,D,L,R 2/, All channels 1 100 VA= 15 V Negative supply current -I All channels VA=

40、0.8 V 1 01, 03, -10 A 2, 3 04 -100 M,D,P,L,R 2/ 1 -10 VA1= 0 V, VA2= 4.0 V 1 -10 VA1= 4.0 V, VA2= 0 V 2, 3 -100 M,D,P,L,R 2/ 1 -100 All channels VA= 0 V, 1 02 -10 15 V 2, 3 -100 M,D,P,L,R 2/ 1 -100 Switch input capacitance CIS(OFF)Measured Source to 3/, 4/ 4 All 28 pF GND Driver input capacitance CC

41、1VA= 0 V 3/ 4/ 4 All 10 pF CC2VA= 15 V 3/ 4/ 10 Switch output COSMeasured Drain to 3/, 4/ 4 All 28 pF GND Off isolation VISOVGEN= 1 VPP, 3/, 4/ 4 All 40 dB f = 1 MHz Cross talk VCR VGEN= 1 VPP, 3/, 4/ 4 All 40 dB f = 1 MHz Charge transfer error VCTEVS= GND, 3/, 4/ 4 All 15 mV CL= 0.01 F See footnote

42、s at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characte

43、ristics - continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Switch turn “ON” time tONRL= 300 , VS= +3 V 9 01, 03, 300 ns VAH= 4.0 V, VAL= 0 V, 10, 11 04 500 see figure 3 M,D,P,L,R 2/ 9 500 RL= 300 , VS= +3 V 9 02 300 VAH=

44、15.0 V, VAL= 0 V, 10, 11 500 see figure 3 M,D,P,L,R 2/ 9 500 Switch turn “OFF” time tOFFRL= 300 , VS= +3 V 9 01, 03, 250 ns VAH= 4.0 V, VAL= 0 V, 10, 11 04 450 see figure 3 M,D,P,L,R 2/ 9 450 RL= 300 , VS= +3 V 9 02 250 VAH= 15.0 V, VAL= 0 V, 10, 11 450 see figure 3 M,D,P,L,R 2/ 9 450 1/ V- = -15 V

45、and V+ = +15 V. For device types 01 and 03, VAH= +4 V and VAL= 0.8 V and for device type 02, VAH= +11 V and VAL= 3.5 V. 2/ RHA device types 01, 02, and 03 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device types 01, 02, and 03 are only tested at the “R” l

46、evel in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device type 04 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and L for condition D. However, device type 04 is only tested at the “R” level in accord

47、ance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any

48、 RHA level, TA= +25C. 3/ Tested initially and after any design changes which may affect these parameters. 4/ For device types 01 and 03, VAL= 0 V and VAH= 4.0 V and for device type 02, VAL= 0 V and VAH= 15 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95812 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 Case outlines