DLA SMD-5962-95826 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS NOR GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R185-97. cs 97-02-24 Monica L Poelking B Changes in accordance with NOR 5962-R439-97. rc 97-08-18 Raymond Monnin C Add AC tests at VDD= 10 V and 15 V and footnote 4/ for those AC tests in table I. Update boiler

2、plate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 03-11-18 Thomas M. Hess D Update radiation features in section 1.5, table IB SEP test limits, and paragraphs 4.4.4.1 4.4.4.5. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-05-14 Thomas M. Hess

3、REV SHET REV D D D D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.m

4、il STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, NOR GATE, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-10

5、-13 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95826 SHEET 1 OF 29 DSCC FORM 2233 APR 97 5962-E278-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321

6、8-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflec

7、ted in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95826 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)De

8、vice class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet t

9、he MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4000B Radiation hardened, CMO

10、S, dual 3-input NOR gate plus inverter 02 4001B Radiation hardened, CMOS, quad 2-input NOR gate 03 4002B Radiatio hardened, CMOS, dual 4-input NOR gate 04 4025B Radiation hardened, CMOS, triple 3-input NOR gate 05 4001BN Radiatio hardened, CMOS, quad 2-input NOR gate with neutron irradiated die 06 4

11、002BN Radiation hardened, CMOS, dual 4-input NOR gate with neutron irradiated die 07 4025BN Radiation hardened, CMOS, triple 3-input NOR gate with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:

12、Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s

13、) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-lineX CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device

14、 class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ S

15、upply voltage range (VDD) -0.5 V dc to +20 V dc DC input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN). 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C Therm

16、al resistance, junction-to-case (JC): Case outline C . 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outlin

17、e X . 0.43 W 1.4 Recommended operating conditions. Supply voltage range (VDD) +3.0 V dc to +18 V dc Case operating temperature range (TC) . -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT) . +0.0 V to VDD1.5 Radiation features. Maximum total dose available (dose rate

18、= 50 - 300 rads (Si)/s) 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108 Rads(Si)/s 5/ Dose rate survivability . 5 x 1011Rads(Si)/s 5/ Neu

19、tron irradiated (device types 05, 06, and 07) 1 x 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to

20、 VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at

21、 the following rate: Case outline C . 13.5 mW/C Case outline X . 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBU

22、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the

23、 issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface St

24、andard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Docu

25、ment Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable la

26、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) pl

27、an. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the re

28、quirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class

29、 M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Logic diagrams. The logic diagrams shall be as sp

30、ecified on figure 3. 3.2.5 Load circuit and switching waveforms. The load circuit and switching waveforms shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be mad

31、e available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC F

32、ORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature ra

33、nge. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also

34、be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall

35、 be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M

36、shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a cert

37、ificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacture

38、rs product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for devi

39、ce class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required

40、for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available ons

41、hore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

42、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions -55C TC+125C unless otherwise specified Device type Group A

43、subgroups Limits Unit Min Max Supply current IDDVDD= 5.0 V, VIN= 0.0 V or VDDAll 1, 3 1/ 0.25 A 2 1/ 7.5 VDD= 10 V, VIN= 0.0 V or VDD1, 3 1/ 0.5 2 1/ 1.5 VDD= 15 V, VIN= 0.0 V or VDD1, 3 1/ 0.5 2 1/ 3.0 VDD= 20 V, VIN= 0.0 V or VDD1 0.5 2 50.0M, D, P, L, R 2/ 1 2.5 VDD= 18 V, VIN= 0.0 V or VDD3 0.5L

44、ow level output current (sink) IOLVDD= 5.0 V, VIN= 0.0 V or VDDVO= 0.4 V All 1 0.53 mA 2 1/ 0.36 3 1/ 0.64 VDD= 10 V, VIN= 0.0 V or VDDVO= 0.5 V 1 1.4 2 1/ 0.9 3 1/ 1.6 VDD= 15 V, VIN= 0.0 V or VDDVO= 1.5 V 1 3.5 2 1/ 2.4 3 1/ 4.2 High level output current (source) IOHVDD= 5.0 V, VIN= 0.0 V or VDDVO

45、= 4.6 V All 1 -0.53 mA 2 1/ -0.36 3 1/ -0.64 VDD= 5.0 V, VIN= 0.0 V or VDDVO= 2.5 V 1 -1.8 2 1/ -1.15 3 1/ -2.0 VDD= 10 V, VIN= 0.0 V or VDDVO= 9.5 V 1 -1.4 2 1/ -0.9 3 1/ -1.6 VDD= 15 V, VIN= 0.0 V or VDDVO= 13.5 V 1 -3.5 2 1/ -2.4 3 1/ -4.2 See footnotes at end of table. Provided by IHSNot for Res

46、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test

47、 conditions -55C TC+125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Output voltage, high VOH VDD= 5 V, no load 1/ All 1, 2, 3 4.95 V VDD= 10 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3 14.95 Output voltage, low VOL VDD= 5 V, no load 1/ All 1, 2, 3 0.05

48、VDD= 10 V, no load 1/ 1, 2, 3 0.05 VDD= 15 V, no load 1, 2, 3 0.05 Input voltage, low VIL VDD= 5 V, VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V VDD= 20 V, VIN= VDDor GND 7 VDD= 18 V, VIN= VDDor GND 8A M, D, P, L, R 2/ 7 VDD= 3.0 V, VIN= VDDor GND 8B M, D, P, L, R 2/ 7 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95826 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D