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本文(DLA SMD-5962-96503 REV A-2009 MICROCIRCUIT LINEAR 5 0 V 1A STEP-DOWN VOLTAGE REGULATOR MONOLITHIC SILICON.pdf)为本站会员(testyield361)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-96503 REV A-2009 MICROCIRCUIT LINEAR 5 0 V 1A STEP-DOWN VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 09-09-08 C. SAFFLE REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBU

2、S COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, 5.0 V, 1 A STEP-DOWN VOLTAGE REGULATOR, MONOLITH

3、IC SILICON DRAWING APPROVAL DATE 97-04-08 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-96503 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E474-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEF

4、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines

5、 and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96503 01 Q E A Federal stock class designator RHA d

6、esignator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA desig

7、nator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Ci

8、rcuit function 01 LM2595-5.0 5.0 V, 1 amp step-down voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for M

9、IL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals

10、Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

11、NDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 45 V ON /OFF pin input voltage -0.3 V VS +15 V Feedback input voltage . -0.3 V VS +15 V Output v

12、oltage to ground (steady state) -1 V Power dissipation (PD) Internally limited Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +260C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) 2C/W Thermal resistance, junction-to-ambient (JA) . 75C/W

13、35C/W 500 linear feet per minute (LFPM) 1.4 Recommended operating conditions. Supply voltage (VS) . 40 V Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form

14、 a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE

15、STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are avail

16、able online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this

17、 drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perfo

18、rmance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1

19、 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as de

20、scribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif

21、ied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical

22、 performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test req

23、uirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where

24、marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF

25、-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in

26、MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be

27、 required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device c

28、lasses Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, a

29、ppendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects th

30、is drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the revi

31、ewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

32、T DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output

33、 voltage 1/ VOUTVIN= 7 V to 40 V, 1 01 4.80 5.20 V IL= 0.1 A to 1 A 2, 3 4.75 5.25 Oscillator frequency 1/ FOVIN= 12 V, IL= 200 mA 4 01 127 173 kHz 5,6 110 173Saturation voltage 2/ 3/ VSATVIN= 12 V, IL= 200 mA, 1 01 1.2 V IOUT= 1 A 2,3 1.5 Current limit 2/ 3/ ICLVIN= 12 V, IL= 200 mA, 1 01 1.2 2.4 A

34、 peak current 2,3 1.0 2.6Output leakage current 2/ 4/ ILVIN= 40 V, 1/ 3/ 1 01 50 A IL= 200 mA, output = 0 V 2,3 210 VIN= 40 V, 1/ 4/ 1 15 mA IL= 200 mA, output = -1 V 2,3 40 Quiescent current 4/ IQVIN= 12 V, IL= 200 mA, 1 01 10 mA 2,3 15 Standby quiescent current ISTBYON /OFF pin = 5 V off, 1 01 200

35、 A VIN= 40 V 2,3 250 Feedback bias current IFBB1 01 50 nA 2,3 100ON /OFF pin logic input level high VIHVIN= 12 V, IL= 200 mA, VOUT= 0 V 1,2,3 01 0.6 V ON /OFF pin logic input level low VILVIN= 12 V, IL= 200 mA, VOUT= nominal output voltage 1,2,3 01 2.0 V See footnotes at end of table. Provided by IH

36、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test

37、Symbol Conditions -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max ON /OFF pin input current IIHVIN= 12 V, IL= 200 mA, 1 01 15 A high VLOGIC= 2.5 V (OFF) 2,3 20 ON /OFF pin input current IILVIN= 12 V, IL= 200 mA, 1 01 5 A low VLOGIC= 0.5 V (ON) 2,3 5.5 1/ Ext

38、ernal components such as the catch diode, inductor, input and output capacitors can affect switching regulator system performance. 2/ Output pin sourcing current. No diode, inductor, or capacitor connected to output pin. 3/ Feedback pin removed from output and connected to 0 V to force the output tr

39、ansistor ON. 4/ Feedback pin removed from output and connected to VINto force the output transistor OFF. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

40、18-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline E Terminal number Terminal symbol 1 NC 2 NC3 OUTPUT 4 NC5 GND 6 NC 7 FEEDBACK 8 NC 9 ON /OFF 10 NC11 GND 12 GND 13 GND 14 GND 15 NC 16 INPUTNC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for Res

41、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sam

42、pling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures s

43、hall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordan

44、ce with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer und

45、er document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C,

46、minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM pl

47、an in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test

48、 circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535

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