DLA SMD-5962-96513 REV G-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED QUAD 2-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLTHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R070-97. jak 96-11-25 Monica L. Poelking B Incorporate NOR and update boilerplate to latest MIL-PRF-38535 requirements. CFS 01-06-11 Thomas M. Hess C Add appendix A to document. Update figure 4. Update boilerpl

2、ate to MIL-PRF-38535 and radiation hardness assurance boilerplate paragraphs. LTG 07-08-28 Thomas M. Hess D Correct circuit function on sheets 2 and 17. - LTG 09-02-25 Charles F. Saffle E Add device types 02 and 03. Update radiation hardness assurance paragraphs. Add table IB. - jak 10-11-16 Muhamma

3、d A. Akbar F To change RHA level H to G for device type 01. Update radiation features in section 1.5 and table IB. Update boilerplate paragraphs as required by the MIL-PRF-38535. - MAA 11-03-07 David J. Corbett G Add footnote 5 to figure 4. Add equivalent test circuit to figure 4. - jak 12-07-09 Tho

4、mas M. Hess REV SHEET REV G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thomas M. Hess DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OH

5、IO 43218-3990 http:/www.dscc.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLTHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPRO

6、VAL DATE 95-11-30 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96513 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E392-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96513 DLA LAND AND MARITIME COLUM

7、BUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available

8、and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 G 96513 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type

9、 (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA mark

10、ed devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS00 Rad

11、iation hardened, quad 2-input NAND gate, TTL compatible inputs 02 54ACTS00E Enhanced, radiation hardened, quad 2-input NAND gate, TTL compatible inputs 03 54ACTS00E Enhanced, radiation hardened, quad 2-input NAND gate, TTL compatible inputs 1.2.3 Device class designator. The device class designator

12、is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and q

13、ualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specifie

14、d in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96513 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LE

15、VEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current (IIN) 10 mA Latch-up immunity current (ILU

16、) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline C and X, device type 01 See MIL-STD-1835 Case outline X, device types 02 and 03 . 15.5C/W Junction temperature (TJ) +175C Maximum package po

17、wer dissipation (PD): Device type 01 . 1.0 W Device types 02 and 03 . 3.2 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage rang

18、e (VOUT) . +0.0 V dc to VDDMaximum low level input voltage (VIL) 0.8 VDDMaximum Minimum high level input voltage (VIH) . 0.5 VDDMinimum Case operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 5/ 1.5 Radiation features. 6/ Maximum total dose

19、 available: Device type 01 (dose rate = 50 300 rads (Si)/s) 5 x 105rads (Si) 7/ Device type 02 (effective dose rate = 1 rad (Si)/s) . 1 x 106rads (Si) 8/ Device type 03 (dose rate = 50 300 rads (Si)/s) 5 x 105rads (Si) 7/ Single event phenomenon (SEP) : Device type 01: No SEU occurs at effective LET

20、 (see 4.4.4.4) . 80 MeV-cm2/mg 9/ No SEL occurs at effective LET (see 4.4.4.4) 120 MeV-cm2/mg 9/ Device types 02 and 03: No SEU occurs at effective LET (see 4.4.4.4) . 108 MeV-cm2/mg 9/ No SEL occurs at effective LET (see 4.4.4.4) 120 MeV-cm2/mg 9/ Dose rate upset (20 ns pulse) 1 x 109rads (Si)/s 9/

21、 10/ Dose rate latch-up . None 9/ Dose rate survivability . 1 x 1012 rads (Si)/s 9/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all volt

22、ages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ (max) - TC(max). JC5/ Derate system prop

23、agation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Radiation testing is performed on the standard evaluation circuit (SEC). 7/ Device types 01 and 03 are tested in accordance with MIL-STD-1019, condition A. 8/ Device type 02 is irradiated at dose rate = 50 - 300 rads (S

24、i)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices

25、only applies to a low dose rate environment. 9/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 10/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types 02 and 03 do not mee

26、t this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96513 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Gove

27、rnment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICA

28、TION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard M

29、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications.

30、The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Ev

31、ent Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict

32、 between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requir

33、ements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requiremen

34、ts for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, co

35、nstruction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal conne

36、ctions shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figu

37、re 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96513 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation expos

38、ure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electric

39、al performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for

40、each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of

41、not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/comp

42、liance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance

43、shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 her

44、ein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirem

45、ents of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notifi

46、cation of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M

47、, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for

48、 device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96513 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max Low level