DLA SMD-5962-96515 REV G-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED QUADRUPLE 2-INPUT NOR GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R072-97. jak 96-11-25 Monica L. Poelking B Incorporate NOR and update boilerplate to latest MIL-PRF-38535 requirements. CFS 01-06-11 Thomas M. Hess C Update boilerplate to MIL-PRF-38535 requirements and to incl

2、ude the radiation hardness boilerplate paragraphs. Add appendix A to the document. Change voltage level testing designations in switching waveforms and test circuit, figure 4. - LTG 07-10-04 Thomas M. Hess D Add device types 02 and 03. - jak 08-03-27 Thomas M. Hess E Change footnote 6 in section 1.5

3、, herein. - jak 08-12-03 Thomas M. Hess F To change RHA level “H” to “G” for device type 01. Update radiation features in section 1.5 and table IB. Update boilerplate paragraphs to current requirements of MIL-PRF-38535 - MAA 11-03-11 David J. Corbett G Add footnote 5 to figure 4. Add equivalent test

4、 circuit to figure 4. - jak 12-07-09 Thomas M. Hess REV SHEET REV G G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3

5、990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUADRUPLE 2-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SI

6、LICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-05-13 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96515 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E394-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

7、CIRCUIT DRAWING SIZE A 5962-96515 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V

8、). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 G 96515 01 V X C Federal

9、stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked

10、 with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows

11、: Device type Generic number Circuit function 01 54ACTS02 Radiation hardened, quadruple 2-input NOR gate, TTL compatible inputs 02 54ACTS02E Enhanced, radiation hardened, quadruple 2-input NOR gate, TTL compatible inputs 03 54ACTS02E Enhanced, radiation hardened, quadruple 2-input NOR gate, TTL comp

12、atible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuit

13、s in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X

14、 CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

15、 A 5962-96515 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range, any pin (VIN) . -0.3 V dc to VDD+ 0.3 V dc DC output voltage range, any pin (V

16、OUT) -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN) . 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC): Case outline C See MIL-STD-1835 Case outline

17、 X . 15.5C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.2 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device type 02 and 03 . +3.0 V dc to 5.5 V dc I

18、nput voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT) . +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 5/ 1.5 Radiation features. 7/ Maximum total dose available: Device type 01 (dose rate = 50 300 ra

19、ds (Si)/s) . 5 x 105rads (Si) Device type 02 (effective dose rate = 1 rad (Si)/s) 1 x 106rad (Si) 6/ Device type 03 (dose rate = 50 300 rads (Si)/s) . 5 x 105rads (Si) Single event phenomenon (SEP): Device type 01: No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 8/ No SEL occurs at ef

20、fective LET (see 4.4.4.4) 120 MeV/(mg/cm2) 8/ Device types 02 and 03: No SEU occurs at effective LET (see 4.4.4.4) . 108 MeV/(mg/cm2) 8/ No SEL occurs at effective LET (see 4.4.4.4) 120 MeV/(mg/cm2) 8/ Dose rate induced upset (20 ns pulse) . 1 x 109rads (Si)/s 8/ 9/ Dose rate induced latch-up None 8

21、/ Dose rate survivability 1 x 1012rads (Si)/s 8/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The

22、limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in ri

23、se time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s

24、 per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower, environment. 7/ Radiation testing is performed on the standard evaluation circuit (SEC). 8/ Limits are guaranteed by design or proce

25、ss, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types 02 and 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking per

26、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96515 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, a

27、nd handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPAR

28、TMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these do

29、cuments are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. U

30、nless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of

31、 this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawi

32、ng takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specif

33、ied herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN c

34、lass level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for

35、 device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as

36、specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

37、e from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96515 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level con

38、trol and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified

39、in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the

40、 PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA des

41、ignator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q

42、“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requ

43、irements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to li

44、sting as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certif

45、icate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and

46、Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity reta

47、in the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircu

48、it group number 36 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96515 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max Low level input voltage VIL02, 03 3.0 V and 3.6 V 1, 2, 3 0.8 V All 4.5V and 5.5V 1, 2, 3 0.8 High level input voltage V