DLA SMD-5962-96524 REV J-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED HEX INVERTER SCHMITT TRIGGER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R081-97. - JAK 96-11-25 Monica L. Poelking B Changes in accordance with NOR 5962-R267-97. - CFS 97-04-22 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 requirements. Add appendix A to the SMD. TVN 02-

2、08-28 Thomas M. Hess D Add footnote to dose rate upset and dose rate survivability in section 1.5. Add test circuit to figure 4. Add die detail B to appendix A. TVN 03-11-21 Thomas M. Hess E Add device types 02 and 03. Editorial changes throughout. TVN 04-01-29 Thomas M. Hess F Correct radiation fea

3、tures in section 1.5 and add footnote 8/. Correct footnotes 2/ and 7/ in Table IA. Correct paragraph 4.4.4.1. Correct SEP test limits in the table IB. Update boilerplate paragraphs to current MIL-PRF-38535 requirements.- MAA 09-09-09 Thomas M. Hess G Update radiation features in section 1.5 and SEP

4、test limits in table IB. Update boilerplate paragraphs to current MIL-PRF-38535 requirements.- MAA 11-04-06 David J. Corbett H Add equivalent test circuits and footnote 5 to figure 4. Delete class M requirements. - MAA 12-10-25 Thomas M. Hess J Add footnote 4/ for capacitance limit for measurements

5、of propagation delay time to table IA. MAA 13-08-20 David J. Corbett REV SHEET REV J J J J J J J J J SHEET 15 16 17 18 19 20 21 22 23 REV STATUS OF SHEETS REV J J J J J J J J J J J J J J SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO

6、43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, HEX I

7、NVERTER SCHMITT TRIGGER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-07-02 REVISION LEVEL J SIZE A CAGE CODE 67268 5962-96524 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E524-13Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

8、G DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96524 REVISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case ou

9、tlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example 5962 G 96524 01 V X C Federal RHA Device Device Case

10、Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate R

11、HA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS14 Radiation hardened, hex inverter Schmitt Trigger 02 54ACS14E Enhanced, radiation hardened, hex inverter Schm

12、itt trigger 03 54ACS14E Enhanced, radiation hardened, hex inverter Schmitt trigger 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification t

13、o MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535

14、 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96524 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings.

15、1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C t

16、o +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline C and X (device type 01). See MIL-STD-1835 Case outline X (device types 02 and 03) . 15C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Devi

17、ce types 02 and 03 . 3.2 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 +4.5 V dc to +5.5 V dc Device types 02 and 03 +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature

18、range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 5/ 1.5 Radiation features. 6/ Maximum total dose available: Device type 01 (dose rate = 50 300 rad (Si)/s) 500 Krad (Si) 7/ Device type 02 (effective dose rate = 1rad (Si)/s) 1 Mrad (Si) 8/ Device type 03 (dose

19、rate = 50 300 rad (Si)/s) 500 Krad(Si) 7/ Single event phenomenon (SEP): Device type 01: No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 9/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV/(mg/cm2) 9/ Device types 02 and 03: No SEU occurs at effective LET (see 4.4.4.4) . 108 MeV

20、/(mg/cm2) 9/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV/(mg/cm2) 9/ Dose rate upset (20 ns pulse) (device types 01, 02 and 03) . 1 x 109rad (Si)/s 9/ 10/ Dose rate induced latch-up . None 9/ Dose rate survivability (device types 01, 02 and 03) . 1 x 1012rad(Si)/s 9/ 1/ Stresses above the

21、 absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full s

22、pecified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Radiation testing is pe

23、rformed on the standard evaluation circuit. 7/ Device types 01 and 03 are tested in accordance with MIL-STD-883, method 1019, condition A. 8/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum tota

24、l dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. 9/ Limits are guaranteed b

25、y design or process, but not production tested unless specified by the customer through the purchase order or contract. 10/ This limit is applicable for device types 01, 02, 03 with VDD 4.5 V. Device types 02 and 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or

26、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96524 REVISION LEVEL J SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specificatio

27、n, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specificat

28、ion for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copi

29、es of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified her

30、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these docume

31、nts are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS devices. JESD

32、78 IC Latch-Up Test. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201-2107.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the re

33、ferences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MI

34、CROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96524 REVISION LEVEL J SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or

35、as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and phys

36、ical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal

37、connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circu

38、its shall be as specified on figure 4. 3.2.6 Irradiation test connections. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance charact

39、eristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electri

40、cal test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the ent

41、ire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Cert

42、ification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the r

43、equirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and h

44、erein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

45、ANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96524 REVISION LEVEL J SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups L

46、imits 3/ Unit Min Max Schmitt trigger positive-going threshold VT+02, 03 3.0 V 1, 2, 3 2.1 V All 4.5 V 1, 2, 3 3.15 All 5.5 V 1, 2, 3 3.85 Schmitt trigger negative-going threshold VT-02, 03 3.0 V 1, 2, 3 0.9 V All 4.5 V 1, 2, 3 1.35 All 5.5 V 1, 2, 3 1.65 Hysteresis (VT+ - VT-) VH02, 03 3.0 V 1, 2,

47、3 0.3 1.2 V All 4.5 V 1, 2, 3 0.6 1.5 High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOH= -100 A 02, 03 3.0 V 1, 2, 3 2.75 V For all inputs affecting output under test, VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOH= -1

48、00 A All 4.5V 1, 2, 3 4.25 Low level output voltage VOLFor all inputs affecting output under test, VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOL= +100 A 02, 03 3.0 V 1, 2, 3 0.25 V For all inputs affecting output under test, VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOL= +100 A All 4.5 V 1, 2, 3 0.25 Input current high IIHFor input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A Input current low IILFor input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A Output