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本文(DLA SMD-5962-96534 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL D FLIP-FLOP WITH CLEAR AND PRESET MONOLITHIC SILICON.pdf)为本站会员(twoload295)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-96534 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL D FLIP-FLOP WITH CLEAR AND PRESET MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R141-97. 96-12-10 Monica L. Poelking B Changes in accordance with NOR 5962-R087-98. 98-03-31 Monica L. Poelking C Incorporate Revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-10-02 Th

2、omas M. Hess D Correct the title to accurately describe the device function. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-08-23 Thomas M. Hess E Change RHA level H to G for device type 01 in section 1.5. Update radiation features in table IA. Update boilerplate paragraphs to

3、 the current requirements of MIL-PRF-38535. - MAA 10-12-28 Thomas M. Hess F Add class V and class Q die and update die appendix A. Add equivalent test circuit and footnote 5 in figure 4. - MAA 12-05-10 Thomas M. Hess REV SHEET REV F F F F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV

4、 STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE B

5、Y ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, DUAL D FLIP-FLOP WITH CLEAR AND PRESET, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-05-13 REVISION LEVEL F SIZE A CAGE CODE 67268 5962-96534 S

6、HEET 1 OF 26 DSCC FORM 2233 APR 97 5962-E294-12.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.

7、1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a ch

8、oice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example 5962 G 96534 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1

9、.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marke

10、d with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS74 Radiation hardened, dual D flip-flop with clear and preset 1.2.3 Device class design

11、ator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, app

12、endix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish.

13、The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBU

14、S, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one inp

15、ut (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recomm

16、ended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ 1.5 Radiat

17、ion features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 5 X 105rads (Si) Single event phenomenon (SEP) : Effective LET, No upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Effective LET, No latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109rads (Si)/s 6/ D

18、oes rate latch-up . None 6/ Dose rate survivability 1 x 1012rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are refe

19、renced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is

20、 performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

21、ICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to th

22、e extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test

23、Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.

24、daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of

25、these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org

26、or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, su

27、persedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Qual

28、ity Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microc

29、ircuit die. For the requirements for microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F S

30、HEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case out

31、lines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching wave

32、forms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquir

33、ing activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating tem

34、perature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers

35、PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes

36、Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for de

37、vice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device cl

38、ass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing sha

39、ll affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and

40、V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involvi

41、ng devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime s agent, and the acquiring activity retain the option to review the manufacturers facility and ap

42、plicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provi

43、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Te

44、st conditions 1/ 11/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIHAll 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G 3/ All 1 3.15 All 5.5 V 1, 2, 3 3.85 M, D, P, L, R, F, G 3/ All 1 3.85 Low level input voltage VILAll 4.5 V 1

45、, 2, 3 1.35 V M, D, P, L, R, F, G 3/ All 1 1.35 All 5.5 V 1, 2, 3 1.65 M, D, P, L, R, F, G 3/ All 1 1.65 High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSIOH= -100.0 A All 4.5 V 1, 2, 3 4.25 V M, D, P, L, R, F, G 3/ All 1 4.25 Low level output voltage VOLFor all

46、 inputs affecting output under test, VIN= VDDor VSSIOL= 100.0 A All 4.5 V 1, 2, 3 0.25 V M, D, P, L, R, F, G 3/ All 1 0.25 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G 3/ All 1 +1.0 Input current low IILFor inp

47、ut under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G 3/ All 1 -1.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G 3/ All 1 10.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or ne

48、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ 11/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Output current (Sink) IOL4/ VIN= VDDor VSS, VOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH4/ VIN= VDDor VSS, VOH= VDD-0.4 V A

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