DLA SMD-5962-96536 REV E-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 4-BIT MAGNITUDE COMPARATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R116-97. 96-12-12 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-09-04 Thomas M. Hess C Correct the title to describe the device function. Update boilerpla

2、te to the latest MIL-PRF-38535 requirements. - jak 07-11-07 Thomas M. Hess D Correct the front page REV STATUS columns. - jak 07-11-28 Thomas M. Hess E Add die requirements with appendix A. Update boilerplate paragraphs as specified in current MIL-PRF-38535 requirements. - MAA 09-05-05 Thomas M. Hes

3、s REV SHET REV E E E E E E E E SHEET 15 16 17 18 19 20 21 22 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3

4、990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-06-11 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A RE

5、VISION LEVEL E SIZE A CAGE CODE 67268 5962-96536 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E272-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

6、 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in

7、 the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96536 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish desi

8、gnator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the

9、MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS85 Radiation hardened, 4-bi

10、t magnitude comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B mic

11、rocircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-l

12、ine X CDFP4-F16 16 Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DR

13、AWING SIZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VO

14、UT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ)

15、+175C Maximum package power dissipation (PD). 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC). -55C to +125C Maximum input

16、rise or fall time rate at VDD= 4.5 V (tr, tf) . 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 X 106Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) No upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Dose rate upset (20 ns

17、pulse) 1 x 109Rads (Si)/s 6/ Dose rate induced latch-up None 6/ Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless ot

18、herwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to+125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror

19、 tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted with

20、out license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and

21、 handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTME

22、NT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these docum

23、ents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

24、Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Cop

25、ies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of th

26、is drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and a

27、s specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for n

28、on-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and her

29、ein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall

30、 be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

31、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The radiation exposure circuit shall be maintained by the manufacturer under document re

32、vision level control and shall be made available to the preparing and acquiring activity upon request 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits ar

33、e as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The part shall b

34、e marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this op

35、tion, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall

36、 be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to s

37、upply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to li

38、sting as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certif

39、icate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of ch

40、ange of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility a

41、nd applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A).

42、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics.

43、Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Min Max Unit All 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 3.15 All 1, 2, 3 3.85 High level input voltage VIHM, D, P, L, R, F, G, H 3/ All 5.5 V 1 3.85 V All 1, 2, 3 1.35 M, D,

44、P, L, R, F, G, H 3/ All 4.5 V 1 1.35 All 1, 2, 3 1.65 Low level input voltage VILM, D, P, L, R, F, G, H 3/ All 5.5 V 1 1.65 V For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 1, 2, 3 4.25 High level output voltage VOHM, D, P, L, R, F, G, H 3/ All 4.5 V 1 4.25 V For all input

45、s affecting output under test, VIN= VDDor VSSIOL= +100 A All 1, 2, 3 0.25 Low level output voltage VOLM, D, P, L, R, F, G, H 3/ All 4.5 V 1 0.25 V For input under test, VIN= 5.5 V For all other inputs VIN= VDDor VSSAll 1, 2, 3 +1.0 Input current high IIHM, D, P, L, R, F, G, H 3/ All 5.5 V 1 +1.0 A F

46、or input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 1, 2, 3 -1.0 Input current low IILM, D, P, L, R, F, G, H 3/ All 5.5 V 1 -1.0 A Output current (Sink) IOL4/ VIN= VDDor VSS, VOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH 4/ VIN= VDDor VSS, VOH= VDD-0.4 V A

47、ll 4.5 V and 5.5 V 1, 2, 3 -8.0 mA VIN= VDDor VSSAll 1, 2, 3 10.0 Quiescent supply current IDDQM, D, P, L, R, F, G, H 3/ All 5.5 V 1 10.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S

48、IZE A 5962-96536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Min Max Unit Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Input capacitance C