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本文(DLA SMD-5962-96565 REV D-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS SYNCHRONOUS 4-BIT UP DOWN BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(registerpick115)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-96565 REV D-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS SYNCHRONOUS 4-BIT UP DOWN BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate to MIL-PRF-38535 requirements. LTG 01-12-03 Thomas M. Hess B Update radiation features in section 1.5 and paragraph 4.4.4.4. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 10-02-10 Thomas M. Hess C U

2、pdate functional test condition VIL=0.8V in table IA. Update radiation features in section 1.5 and SEP test limit table IB. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 11-01-11 Thomas M. Hess D To correct switching waveforms input/output test limits to figure 4. Add te

3、st equivalent circuits and footnote 4 to figure 4. Delete class M requirements throughout.MAA 13-01-25 Thomas M. Hess REV SHEET REV D D D D D SHEET 15 16 17 18 19 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DLA LAND

4、 AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION

5、 HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-12-20 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96565 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E186-13 Provided by IHSNot for ResaleNo reproduction or networking

6、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device c

7、lass Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the foll

8、owing example 5962 H 96565 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-P

9、RF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS191 Radiation hardened, synchronous 4-bit u

10、p/down binary counter, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. T

11、he case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided

12、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0

13、.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5

14、 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput v

15、oltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time rate at VDD= 4.5 V (tr, tf) . 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 106rad (Si) Single event phenomenon (SEP): N

16、o SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 6/ No SEL occurs at effective LET (see 4.4.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109rads (Si)/s 6/ Dose rate induced latch-up None 6/ Dose rate survivability 1 x 1012rads(Si)/s 6/ 1/ Stresses above the absolute maximu

17、m rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange an

18、d case temperature range of -55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process, but not production

19、 tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4

20、DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the sol

21、icitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT

22、OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelph

23、ia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide

24、 for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of pre

25、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requi

26、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

27、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-

28、PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The

29、truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networkin

30、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under docum

31、ent revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter

32、limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The par

33、t shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product usin

34、g this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compl

35、iance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source

36、of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of PMIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lo

37、t of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Ele

38、ctrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIHAll 4.5 V 1, 2, 3 2.25 V M, D, P, L, R, F, G, H 3/ All 1 2.25 All 5.5 V 1, 2, 3 2.75 M, D, P, L, R, F, G, H

39、 3/ All 1 2.75 Low level input voltage VILAll 4.5 V 1, 2, 3 0.8 V M, D, P, L, R, F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSIOH= -8.0 mA All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R,

40、F, G, H 3/ All 1 3.15 Low level output voltage VOLFor all inputs affecting output under test, VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D,

41、 P, L, R, F, G, H 3/ All 1 +1.0 Input current low IILFor input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Quiescent supply current delta, TTL input levels IDD 4/ For input under test VIN= VDD2.1 V For all other inputs VIN= VDD

42、or VSSAll 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

43、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A s

44、ubgroups Limits 2/ Unit Min Max Output current (Sink) IOL5/ VIN= VDDor VSSVOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH5/ VIN= VDDor VSSVOH= VDD-0.4 V All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA Short circuit output current IOS6/ 7/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Input

45、capacitance CINf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW8/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 2.1 mW/MHz Functional test 9/ VIH= 0.5 VDD, VIL= 0.8 V See 4.4.1b All 4.5 V and 5.5

46、V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, LOADto QXtPLH110/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 20.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 20.0 tPHL110/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 22.0 M, D, P, L, R, F, G, H 3/ All 9

47、2.0 22.0 Propagation delay time, A, B, C, or D to QXtPLH210/ CL= 50 pF, see figure 4 All 4.5 V and 4.5 V 9, 10, 11 2.0 23.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 23.0 tPHL210/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 19.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 19.0 Propagation delay t

48、ime, CLK to QXtPLH310/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 17.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 17.0 tPHL310/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 22.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 22.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

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