ImageVerifierCode 换一换
格式:PDF , 页数:17 ,大小:189.17KB ,
资源ID:700939      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-700939.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-96585 REV C-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(unhappyhay135)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-96585 REV C-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. TVN 06-04-25 Thomas M. Hess B Update boilerplate paragraphs and radiation para

2、graphs 4.4.4.1 4.4.4.4 to the current MIL-PRF-38535 requirements. - LTG 12-04-19 Thomas M. Hess C To correct switching waveforms input/output test limits to figure 4. Add test equivalent circuits and footnote 5 to figure 4. Add paragraph 2.2 for ASTM F1192 document. Delete class M requirements throu

3、ghout. - MAA 13-02-05 Thomas M. Hess REV SHEET REV C C SHEET 15 16 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT

4、DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Charles F. Saffle Jr. APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MO

5、NOLITHIC SILICON DRAWING APPROVAL DATE 96-12-20 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96585 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E191-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LA

6、ND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes a

7、re available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96585 01 V X A Federal stock class designator RHA designator (see 1.2.1

8、) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-)

9、 indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS283 Radiation hardened, 4-bit binary full adder with fast carry, TTL compatible inputs 1.2.3 Device class designator. The device class

10、designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descrip

11、tive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

12、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output v

13、oltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction te

14、mperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V

15、 4/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 6/ No SEL occurs at effective LET (see 4.4

16、.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Latch-up . None Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect r

17、eliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in r

18、ise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase ord

19、er or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government spec

20、ification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PR

21、F-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircui

22、t Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The follow

23、ing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenom

24、ena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from: ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between

25、 the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements f

26、or device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical di

27、mensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on fig

28、ure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for Resale

29、No reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by

30、the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and

31、postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table

32、IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devi

33、ce. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535.

34、3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listin

35、g as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall b

36、e provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 22

37、34 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIH All 4.5 V 1, 2, 3 2.25 V M, D, P, L, R, F, G, H 3/ All 1 2.25 All 5.5 V 1, 2, 3 2.7

38、5 M, D, P, L, R, F, G, H 3/ All 1 2.75 Low level input voltage VIL All 4.5 V 1, 2, 3 0.8 V M, D, P, L, R, F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOH For all inputs affecting output under test, VIN= VDDor VSSIOH= -8.0 mA All 4.5 V 1, 2

39、, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 Low level output voltage VOL For all inputs affecting output under test, VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIH For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll

40、5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IIL For input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Output current (source) IOH4/ For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 4.5

41、 V and 5.5 V 1, 2, 3 -8.0 mA M, D, P, L, R, F, G, H 3/ All 1 -8.0 Output current (sink) IOL4/ For output under test, VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 mA M, D, P, L, R, F, G, H 3/ All 1 8.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F,

42、G, H 3/ All 1 10.0 Quiescent supply current delta, TTL input levels IDDQ5/ For input under test, VIN= VDD- 2.1 V For all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 Short circuit output current IOS6/ 7/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA See footnot

43、es at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance charac

44、teristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipati

45、on PSW8/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 1.9 mW/ MHz M, D, P, L, R, F, G, H 3/ All 4 1.9 Functional test 9/ VIH= 0.5 VDD, VIL= 0.8 VSee 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, C0 to n tPLH110/ CL= 50 pF minimum See f

46、igure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 16.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 16.0 tPHL110/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 19.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 19.0 Propagation delay time, C0 to C4 tPLH210/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.

47、5 V 9, 10, 11 2.0 16.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 16.0 tPHL210/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 17.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 17.0 Propagation delay time, An or Bn to C4 tPLH310/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0

48、16.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 16.0 tPHL310/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 15.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 15.0 Propagation delay time, An or Bn to n tPLH410/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 14.0 ns M, D, P, L, R, F, G, H 3/ All 9 2.0 14.0 tPHL410/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 19.0 M, D, P, L, R, F, G, H 3/ All 9 2.0 19.0 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1