DLA SMD-5962-96609 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 14 STAGE RIPPLE-CARRY BINARY COUNTER DIVIDER AND OSCILLATOR MONOLITHIC SILICON《抗辐射互补金属氧化物半导体14步并行二元计数器或驱动.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R212-97. 97-03-28 Monica L. Poelking B Changes in accordance with NOR 5962-R385-97. 97-07-24 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 03-10-16 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney DEFENSE SUPPLY CENTE

3、R COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-20 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 14 STAGE RIPPLECARRY BINARY COUNTER/DIVI

4、DER AND OSCILLATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96609 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E553-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted wi

5、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device clas

6、ses Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in th

7、e following example: 5962 R 96609 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the

8、MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device

9、 type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4060B Radiation hardened CMOS, 14 stage ripplecarry binary counter/divider and oscillator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance

10、level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s).

11、The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PR

12、F-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolu

13、te maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range . -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seco

14、nds) +265C Thermal resistance, junction-to-case (JC): Case E 24C/W Case X 29C/W Thermal resistance, junction-to-ambient (JA): Case E 73C/W Case X 114C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E 0.68 W Case X 0.44 W 1.4 Recommended operating conditions.

15、Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup

16、(see 4.4.4.4) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and han

17、dbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPA

18、RTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specif

19、ied, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linear

20、ly (the derating is based on JA) at the following rate: Case E. 13.7 mW/C Case X. 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPP

21、LY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of S

22、tandard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of pre

23、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requi

24、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

25、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and

26、physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Termi

27、nal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein,

28、 the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrica

29、l tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations

30、, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535,

31、 appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or ne

32、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be requ

33、ired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The cer

34、tificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix

35、 A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device cla

36、ss M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquir

37、ing activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall

38、 be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSC

39、C FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 5.0 VDD= 5 V 1/ VIN= VDDor GND All 2 150 1, 3 10 VDD= 10 V 1/ VIN= VDDor GND All 2 300 1, 3 10 VDD= 15 V 1/ VIN=

40、 VDDor GND All 2 600 1 10 VDD= 20 V, VIN= VDDor GND All 2 1000 M, D, P, L, R 2/ All 1 25 Supply current IDDVDD= 18 V, VIN= VDDor GND All 3 10 A 1 0.53 2 1/ 0.36 VDD= 5 V VO= 0.4 V All 3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V All 3 1/ 1.6 1 3.5 2 1/ 2.4 Low level output current (sink) (excluding

41、pins 9 and 10) VDD= 15 V VO= 1.5 V 3 1/ 4.2 VDD= 5 V, VO= 0.4 V 1/ 1 0.16 VDD= 10 V, VO= 0.5 V 1/ 1 0.42 Drive current at pin 9 oscillator design IOLVDD= 15 V, VO= 1.5 V 1/ All 1 -1.0 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

42、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified De

43、vice type Group A subgroups Min Max Units 1 -0.5 2 1/ -0.4 VDD= 5 V VO= 4.6 V All 3 1/ -0.6 1 -1.8 2 1/ -1.2 VDD= 5 V VO= 2.5 V All 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V All 3 1/ -1.6 1 -3.5 2 1/ -2.4 High level output current (source) (excluding pins 9 and 10) VDD= 15 V VO= 13.5 V All 3 1/

44、 -4.2 VDD= 5 V 1/ 1 -0.16 VDD= 10 V 1/ 1 -0.42 Drive current at pin 9 oscillator design IOHVDD= 15 V 1/ All 1 1.0 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 50 VDD= 10 V, no lo

45、ad 1/ 1, 2, 3 50 Output voltage, low VOLVDD= 15 V, no load All 1, 2, 3 50 mV VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

46、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-96609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A

47、 subgroups Min Max Units 9 740 VDD= 5.0 V, VIN= VDDor GND All 10, 11 999 M, D, P, L, R 2/ All 9 999 VDD= 10 V 1/ 9 300 Propagation delay time, input pulse 1 to Q4 4/ tPHL1, tPLH1VDD= 15 V 1/ All 9 200 ns 9 200 VDD= 5.0 V, VIN= VDDor GND All 10, 11 270 M, D, P, L, R 2/ All 9 270 VDD= 10 V 1/ 9 100 Pr

48、opagation delay time, QN to QN + 1 4/ tPHL2, tPLH2VDD= 15 V 1/ All 9 80 ns 9 360 VDD= 5.0 V, VIN= VDDor GND All 10, 11 486 M, D, P, L, R 2/ All 9 486 VDD= 10 V 1/ 9 160 Propagation delay time, RESET 4/ tPHL3VDD= 15 V 1/ All 9 100 ns 9 200 Transition time 4/ tTLH, tTHLVDD= 5.0 V, VIN= VDDor GND All 10, 11 270 ns VDD= 10 V 1/ 9 100 VDD= 15 V 1/ All 9 80 ns 9 3.5 Maximum input pulse frequency 4/ F1 VDD= 5.0 V, VIN= VDDor GND All 10, 11 2.59 VDD= 10 V 1/ 9 8.0 VDD= 15 V 1/ All 9 12 MHz See footnotes at end of table. Provided by