DLA SMD-5962-96614 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R225-97. 97-02-28 Monica L. Poelking B Changes in accordance with NOR 5962-R390-97. 97-07-25 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 03-10-16 Thomas M. Hess D Update radiation features in section 1.5 and paragraphs 4.4.4.1 4.4.4.5. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-04-19 Thomas M. Hess REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D D D D D D D D

3、 D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC

4、 N/A CHECKED BY Monica L. Poelking APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-12-04 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96614 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E237-10 Provi

5、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product

6、assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) l

7、evels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96614 01 V E C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA

8、 designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash

9、(-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4098B Radiation hardened CMOS, dual monostable multivibrator02 4098BN Radiation hardened CMOS, dual monostable multivibrator with neutron

10、irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircui

11、ts in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 1

12、6 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9661

13、4 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input 10 mA Device dissipation

14、per output transistor 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E . 24C/W Case X . 29C/W Thermal resistance, junction-to-ambient (JA): Case E . 73C/W Case X . 114C/W Junction temperature (TJ)

15、 . +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E . 0.68 W Case X . 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage (VIN) . 0 V to VDDOutput voltage (VOUT) . 0 V to VDD 1.5

16、Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108Rads(S

17、i)/s 5/ Dose rate survivability . 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise speci

18、fied, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linea

19、rly (the derating is based on JA) at the following rate: Case E . 13.7 mW/C Case X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

20、E A 5962-96614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent speci

21、fied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standar

22、d Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/q

23、uicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this

24、 document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the dev

25、ice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifie

26、d herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3

27、8535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintaine

28、d by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics

29、 and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in t

30、able IA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked wit

31、h the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RH

32、A designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“

33、or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the

34、 requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an

35、approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of con

36、formance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of prod

37、uct (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicabl

38、e required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by

39、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol

40、Test conditions -55C TC +125C unless otherwise specified Devicetype Group A subgroups Limits Units Min Max Supply current IDDVDD= 5 V VIN= VDDor GND All 1, 3 1/ 1.0 A 2 1/ 30 VDD= 10 V VIN= VDDor GND All 1, 3 1/ 2.0 2 1/ 60 VDD= 15 V VIN= VDDor GND All 1, 3 1/ 2.0 2 1/ 120 VDD= 20 V, VIN= VDDor GND

41、All 1 2.0 2 200 M, D, P, L, R 2/ All 1 7.5 VDD= 18 V, VIN= VDDor GND All 3 2.0 Low level output current (sink) IOLVDD= 5 V VO= 0.4 V All 1 0.53 mA 2 1/ 0.36 3 1/ 0.64 VDD= 10 V VO= 0.5 V All 1 1.4 2 1/ 0.9 3 1/ 1.6 VDD= 15 V VO= 1.5 V All 1 3.5 2 1/ 2.4 3 1/ 4.2 High level output current (source) IO

42、HVDD= 5 V VO= 4.6 V All 1 -0.53 mA 2 1/ -0.36 3 1/ -0.64 VDD= 5 V VO= 2.5 V All 1 -1.8 2 1/ -1.15 3 1/ -2.0 VDD= 10 V VO= 9.5 V All 1 -1.4 2 1/ -0.9 3 1/ -1.6 VDD= 15 V VO= 13.5 V All 1 -3.5 2 1/ -2.4 3 1/ -4.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking

43、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions -55C TC +125C unless

44、 otherwise specified Device type Group A subgroups Limits Units Min Max Output voltage, high VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V VDD= 10 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3 14.95 Output voltage, low VOLVDD= 5 V, no load 1/ All 1, 2, 3 50 mV VDD= 10 V, no load 1/ 1, 2, 3 5

45、0 VDD= 15 V, no load 1, 2, 3 50 Input voltage, low VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOLVDD/2V VDD= 20 V, VIN= VDDor GND 7 VDD= 18 V, VIN= VDDor GND All 8A M, D, P, L, R 2/ All 7 VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ All 7 Propagation de

46、lay time, +TR, -TR to Q, Q tPHL1, tPLH1VDD= 5.0 V, VIN= VDDor GND RX = 5 k to 10 k, CX 15 pF 4/ All 9 500 ns 10, 11 675 M, D, P, L, R 2/ All 9 675 VDD= 10 V 1/ 4/ 5/ All 9 250 VDD= 15 V 1/ 4/ 5/ 9 200 Propagation delay time, reset CX 15 pF tPHL2, tPLH2VDD= 5.0 V 1/ 4/ All 9 450 ns VDD= 10 V 1/ 4/ 5/

47、 9 250 VDD= 15 V 1/ 4/ 5150 Transition time tTLH1VDD= 5.0 V, VIN= VDDor GND RX = 5 k to 10 k, CX 15 pF 4/ All 9 200 ns 10, 11 270 VDD= 10 V 1/ 4/ 5/ All 9 100 VDD= 15 V 1/ 4/ 5/ 9 80 tTHL1VDD= 5.0 V, VIN= VDDor GND RX = 5 k to 10 k CX 15 pF to 10,000 pF 4/ All 9 200 ns 10, 11 270 VDD= 10 V 1/ 4/ All

48、 9 100 VDD= 15 V 1/ 4/ 9 80 Transition time, CX = 0.01 F to 0.1 F tTLH2, tTHL2VDD= 5.0 V 1/ 4/ All 9 300 ns VDD= 10 V 1/ 4/ 6/ 9 150 VDD= 15 V 1/ 4/ 6130 Transition time, CX = 0.1 F to 1 F tTHL3VDD= 5.0 V 1/ 4/ All 9 500 ns VDD= 10 V 1/ 4/ 5/ 9 300 VDD= 15 V 1/ 4/ 5100 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96614 DEF