DLA SMD-5962-96615 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-BIT ADDRESSABLE LATCH MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R213-97. 97-03-28 Monica L. Poelking B Changes in accordance with NOR 5962-R391-97. 97-07-25 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 03-10-16 Thomas M. Hess D Update radiation features in section 1.5 and paragraphs 4.4.4.1 4.4.4.4. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-04-19 Thomas M. Hess REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D D D D D D D D

3、 D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC

4、 N/A CHECKED BY Monica L. Poelking APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 8-BIT ADDRESSABLE LATCH,MONOLITHIC SILICON DRAWING APPROVAL DATE 95-12-05 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96615 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E301-10 Provided by

5、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assuran

6、ce class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels i

7、s reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96615 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA design

8、ator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) ind

9、icates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4099B Radiation hardened CMOS, 8-bit addressable latch 1.2.3 Device class designator. The device class designator is a single letter identifying

10、the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1

11、.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

12、V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97

13、 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input 10 mA Device dissipation per output transistor 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering,

14、10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E . 24C/W Case X . 29C/W Thermal resistance, junction-to-ambient (JA): Case E . 73C/W Case X . 114C/W Junction temperature (TJ) . +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E . 0.68 W Case X . 0.44 W 1.4 Recommended

15、operating conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage (VIN) . 0 V to VDDOutput voltage (VOUT) . 0 V to VDD1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 1 x 105Rads (Si) Singl

16、e event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108Rads(Si)/s 5/ Dose rate survivability . 5 x 1011Rads(Si)/s 5/ 1/ Stresses above the absolute maximum rating may

17、cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case te

18、mperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E . 13.7 mW/C Case X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. Pro

19、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification,

20、 standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -

21、Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings

22、. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a confl

23、ict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item req

24、uirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item require

25、ments for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design,

26、 construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal co

27、nnections shall be as specified on figure 1. 3.2.3 Timing diagram. The timing diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the p

28、reparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full

29、 case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

30、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packa

31、ges where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance wi

32、th MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

33、quired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of complianc

34、e shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, fo

35、r device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PR

36、F-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that

37、affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option o

38、f the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

39、ICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C unless otherwise specified Devicetype Group A subgroups Limits Uni

40、ts Min Max Supply current IDDVDD= 5 V VIN= 0.0 V or VDDAll 1, 3 1/ 5.0 A 2 1/ 150 VDD= 10 V VIN= 0.0 V or VDDAll 1, 3 1/ 10 2 1/ 300 VDD= 15 V VIN= 0.0 V or VDDAll 1, 3 1/ 10 2 1/ 600 VDD= 20 V, VIN= 0.0 V or VDDAll 1 10 2 1000 M, D, P, L, R 2/ All 1 25 VDD= 18 V, VIN= 0.0 V or VDDAll 3 10 Low level

41、 output current (sink) IOLVDD= 5 V VO= 0.4 V All 1 0.53 mA 2 1/ 0.36 3 1/ 0.64 VDD= 10 V VO= 0.5 V All 1 1.4 2 1/ 0.9 3 1/ 1.6 VDD= 15 V VO= 1.5 V All 1 3.5 2 1/ 2.4 3 1/ 4.2 High level output current (source) IOHVDD= 5 V VO= 4.6 V All 1 -0.53 mA 2 1/ -0.36 3 1/ -0.64 VDD= 5 V VO= 2.5 V All 1 -1.8 2

42、 1/ -1.15 3 1/ -2.0 VDD= 10 V VO= 9.5 V All 1 -1.4 2 1/ -0.9 3 1/ -1.6 VDD= 15 V VO= 13.5 V All 1 -3.5 2 1/ -2.4 3 1/ -4.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615

43、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Units Min Max Output voltage,

44、high VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V VDD= 10 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3 14.95 Output voltage, low VOLVDD= 5 V, no load 1/ All 1, 2, 3 50 mV VDD= 10 V, no load 1/ 1, 2, 3 50 VDD= 15 V, no load 1, 2, 3 50 Input voltage, low VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL1

45、3.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOLVDD/2V VDD= 20 V, VIN= VDDor GND 7 VDD= 18 V, VIN= VDDor GND All 8A M, D, P, L, R 2/ All 7 VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ All 7 Transition time tTLH, tTHLVDD= 5.0 V, VIN= VDDor GND 4/ All 9 200 ns 10, 11 270 VDD= 10 V 1/ 4/ 9 100

46、VDD= 15 V 1/ 480 Propagation delay time, data to output tPHL1, tPLH1VDD= 5.0 V, VIN= VDDor GND 4/ All 9 400 ns 10, 11 540 M, D, P, L, R 2/ All 9 540 VDD= 10 V 1/ 4/ All 9 150 VDD= 15 V 1/ 4/ 9 100 Propagation delay time, write disable to output tPHL2, tPLH2VDD= 5.0 V, VIN= VDDor GND 4/ All 9 400 ns

47、10, 11 540 M, D, P, L, R 2/ All 9 540 VDD= 10 V 1/ 4/ All 9 160 VDD= 15 V 1/ 4/ 9 120 Propagation delay time, reset to output tPHL3VDD= 5.0 V, VIN= VDDor GND 4/ All 9 350 ns 10, 11 473 M, D, P, L, R 2/ All 9 473 VDD= 10 V 1/ 4/ All 9 160 VDD= 15 V 1/ 4/ 9 130 Propagation delay time, address to outpu

48、t tPHL4, tPLH4VDD= 5.0 V, VIN= VDDor GND 4/ All 9 450 ns 10, 11 608 M, D, P, L, R 2/ All 9 608 VDD= 10 V 1/ 4/ All 9 200 VDD= 15 V 1/ 4/ 9 150 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96615 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 9 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test con