DLA SMD-5962-96616 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS STROBED HEX INVERTER BUFFER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体旋转六角变极器或缓冲器硅单片电路数字微电路》.pdf

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-01-29Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R032-98a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-966169. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, STROBED HEXINVERTER/BUFFER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No us

6、ers listed.a. CURRENT-b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R032-98“.Revisions date column; add “98-01-29“.Revision level block; add “A“

7、.Rev status of sheets; for sheets 1, 4, and 15 through 21, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 15 through 21: Add attached appendix A.CONTINUED ON NEX

8、T SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised do

9、cument.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)98-01-2915a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (

10、Signature)TIN H. LEc. DATE SIGNED(YYMMDD)98-01-29DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REV

11、ISION LEVELASHEET15DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers Lis

12、t (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance with MIL-PRF-38534 are specified herei

13、n. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The PIN sh

14、all be as shown in the following example:5962 R 96616 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall

15、meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 4502B Radiation hardened, CMOS,strobed hex inverter/buffer.02 4502BN Radiation hardene

16、d, CMOS,strobed hex inverter/buffer,neutron irradiated die.10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license

17、 from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET16DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 3 of 8 10.2.4 Die Details. The d

18、ie details designation shall be a unique letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimension

19、s.Die Types Figure number01, 02 A-110.2.4.2 Die Bonding pad locations and Electrical functions.Die Types Figure number01, 02 A-110.2.4.3 Interface Materials.Die Types Figure number01, 02 A-110.2.4.4 Assembly related information.Die Types Figure number01, 02 A-110.3 Absolute maximum ratings. See para

20、graph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecificatio

21、ns, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted wit

22、hout license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET17DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 4 of 8 SPECIFICATION

23、DEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the spe

24、cification, standards, bulletin, and handbook required by manufacturers in connection with specificacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing

25、and the references cited herein, the textof this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Manag

26、ement (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specifiedin MIL-PRF-38535 and the manufacturers QM plan, for device classes Q

27、 and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.

28、3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table. The truth table shall be as defined within paragra

29、ph 3.2.3 of the body of this document.30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body ofthis document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWIN

30、GSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET18DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation

31、parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric te

32、sting sufficientto make the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the certificati

33、on mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in o

34、rder to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 a

35、nd the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device class

36、es Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and

37、 V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual ins

38、pection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY C

39、ENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET19DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 6 of 8 40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for par

40、ts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4

41、.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, 4.4.4.4 and 4.4.4.5.50. DIE CARRIER50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturers QM plan oras specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical,

42、 mechanical andelectrostatic protection.60. NOTES60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications andlogistics

43、 purposes.60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-STD-1331.60.4 Sources of

44、Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and haveagreed to this drawing.Provided by IHSNot for ResaleNo reproduction or networkin

45、g permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET20DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 7 of

46、8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 2108 x 2286 microns.Die Thickness: 20 +/-1 mils.o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSNOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking pe

47、rmitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96616DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET21DSCC FORM 2234APR 97Document No: 5962-96616Revision: AAPPENDIX A NOR No: 5962-R032-98APPENDIX A FORMS A PART OF SMD 5962-96616 Sheet: 8 of 8 o

48、INTERFACE MATERIALSTop Metallization: Al 11.0kA - 14.0kABackside Metallization NoneGlassivationType: PSGThickness 10.4kA - 15.6kASubstrate: Single crystal silicono ASSEMBLY RELATED INFORMATIONSubstrate Potential: Floating or Tied to VDD.Special assemblyinstructions: Bond pad #16 (VDD) first.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETINDATE: 98-01-29Approved sources of supply for SMD 5962-96616 are listed below for immediate acquisition information only and shall be addedto MIL-HDBK-103 and QML-3