DLA SMD-5962-96619 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4-BIT FULL ADDER WITH PARALLEL CARRY OUT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4-BIT全加速硅单片电路数字微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R215-97. 97-03-28 Monica L. Poelking B Changes in accordance with NOR 5962-R394-97. 97-07-29 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 03-10-16 Thomas M. Hess REV SHET REV C C C C C C C SHEET 15 16 17 18 19 20 21 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER

3、COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-18 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 4-BIT FULL ADDER WITH PARALLEL CARRY OUT,

4、MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96619 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E017-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

5、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and spa

6、ce application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example:

7、 5962 R 96619 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specif

8、ied RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify th

9、e circuit function as follows: Device type Generic number Circuit function 01 4008B Radiation hardened CMOS, 4-bit full adder with parallel carry out 02 4008BN Radiation hardened CMOS, 4-bit full adder with parallel carry out and neutron irradiated die 1.2.3 Device class designator. The device class

10、 designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certifi

11、cation and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is a

12、s specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

13、16-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range . -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperatur

14、e range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case E 24C/W Case X 29C/W Thermal resistance, junction-to-ambient (JA): Case E 73C/W Case X 114C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ C

15、ase E 0.68 W Case X 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomen

16、on (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 2. APPLICABLE DOCUME

17、NTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of

18、Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended

19、 operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherw

20、ise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E. 13.7 mW/C Case X. 8.8 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only. Provided by IHSNot for Resa

21、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircu

22、its. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are avai

23、lable from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document

24、, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manuf

25、acturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.

26、 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, app

27、endix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation test c

28、onnections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified i

29、n table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PI

30、N listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using t

31、his option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V

32、 shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEF

33、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (s

34、ee 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for th

35、is drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device

36、classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving d

37、evices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documen

38、tation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleN

39、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -

40、55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 5.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 150 1, 3 1/ 10 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 300 1, 3 1/ 10 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 600 1 10 VDD= 20 V, VIN= 0.0 V or VDDAll 2 1000 M, D, P, L, R 2/ Al

41、l 1 25 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 10 A 1 0.53 2 1/ 0.36 VDD= 5 V VO= 0.4 V All 3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V All 3 1/ 1.6 1 3.5 2 1/ 2.4 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V All 3 1/ 4.2 mA See footnotes at end of table. Provided by IHSNot fo

42、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test

43、Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1 -0.53 2 1/ -0.36 VDD= 5 V VO= 4.6 V All 3 1/ -0.64 1 -1.8 2 1/ -1.15 VDD= 5 V VO= 2.5 V All 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V All 3 1/ -1.6 1 -3.5 2 1/ -2.4 High level output current

44、 (source) IOHVDD= 15 V VO= 13.5 V All 3 1/ -4.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 50 VDD= 10 V, no load 1/ 1, 2, 3 50 Output voltage, low VOLVDD= 15 V, no load All 1,

45、2, 3 50 mV VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V 9 200 Transition time VDD= 5.0 V, VIN= VDDor GND 5/ 10, 11 270 VDD= 10 V 1/ 5/ 9 100 tTLH, tTHLVDD= 15 V 1/ 5/ All 9 80 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproducti

46、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55

47、C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 9 800 VDD= 5.0 V, VIN= VDDor GND 5/ All 10, 11 1080 M, D, P, L, R 2/ All 9 1080 VDD= 10 V 1/ 5/ 9 320 Propagation delay time, sum in to sum out tPHL1, tPLH1VDD= 15 V 1/ 5/ All 9 230 ns 9 740 VDD= 5.0 V, VIN= VDDor GND

48、5/ All 10, 11 999 M, D, P, L, R 2/ All 9 999 VDD= 10 V 1/ 5/ 9 310 Propagation delay time, carry in to sum out tPHL2, tPLH2 VDD= 15 V 1/ 5/ All 9 230 ns 9 400 VDD= 5.0 V, VIN= VDDor GND 5/ All 10, 11 540 M, D, P, L, R 2/ All 9 540 VDD= 10 V 1/ 5/ 9 180 Propagation delay time, sum in to carry out tPHL3, tPLH3VDD= 15 V 1/ 5/ All 9 130 ns 9 200 VDD= 5.0 V, VIN= VDDor GND 5/ All 10, 11 270 M, D, P, L, R 2/ All 9 270 VDD= 10 V 1/ 5/ 9 100 Propagation delay time, carry in to carry out tPHL4, tPLH4VDD= 15 V 1/ 5/ All