DLA SMD-5962-96622 REV C-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL D-TYPE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重D类双稳态多谐振荡器硅单片电路数字微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R376-97 - CFS 97-07-24 Monica L. Poelking B Make corrections to subgroup 3 IOHlimits in table I. Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. - CFS 01-09-19 Thomas M. Hess C Correct

2、 the unit for IDDin table I. Correct the truth table in figure 2. Update the boilerplate. - LTG 05-04-19 Thomas M. Hess REV SHET REV B C C C C C C SHEET 15 16 17 18 19 20 21 REV STATUS REV C B B C C C C C C B C B C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithad

3、ia DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL D-TYPE FLIP-FLOP, M

4、ONOLITHIC AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-14 SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96622 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E303-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

5、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applic

6、ation (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 9

7、6622 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA

8、 levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circu

9、it function as follows: Device type Generic number Circuit function 01 4013B Radiation hardened, CMOS, dual D-type flip-flop 02 4013BN Radiation hardened, CMOS, dual D-type flip-flop with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying

10、 the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

11、1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

12、 V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 9

13、7 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (solder

14、ing, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case outline X 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outli

15、ne C . 0.68 W Case outline X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT). +0.0 V to VDD1.5 Radiation features: Total dose 1

16、x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.5) . 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108Rads (Si)/s 5/ Dose rate latch-up 2 x 108 Rads (Si/s 5/ Dose rate survivability 5 x 1011 Rads (Si)/s 5/ Neutron irradiated (device ty

17、pe 02) 1 x 1014 neutrons/cm2 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameter

18、s specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C.

19、13.5 mW/C Case outline X . 8.6 mW/C 5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LE

20、VEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those ci

21、ted in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlin

22、es. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order

23、Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regu

24、lations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The mod

25、ification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix

26、 A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines sh

27、all be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as speci

28、fied on figure 3. 3.2.5 Irradiation test connections. The irradiation test connections shall be as specified in table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER CO

29、LUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in tabl

30、e I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN list

31、ed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator s

32、hall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requ

33、ired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements

34、of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved sourc

35、e of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as re

36、quired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 h

37、erein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required doc

38、umentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Res

39、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions

40、 -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Supply current IDDVDD= 5 V All 1, 3 1/ 1.0 A VIN= 0.0 V or VDD2 1/ 30 DD= 10 V All 1, 3 1/ 2.0 VIN= 0.0 V or VDD2 1/ 60 DD= 15 V All 1, 3 1/ 2.0 VIN= 0.0 V or VDD2 1/ 200 VDD= 20 V All 1 2.0 IN= 0.0 V or VDD2

41、 200 M, D, P, L, R 2/ All 1 7.5 VDD= 18 V, VIN= 0.0 V or VDDAll 3 2.0 Low level output IOLVDD= 5 V All 1 0.53 mA current (sink) VO= 0.4 V 2 1/ 0.36 VIN= 0.0 V or VDD3 1/ 0.64 DD= 10 V All 1 1.4 VO= 0.5 V 2 1/ 0.9 VIN= 0.0 V or VDD3 1/ 1.6 DD= 15 V All 1 3.5 VO= 1.5 V 2 1/ 2.4 VIN= 0.0 V or VDD3 1/ 4

42、.2 High level output IOHVDD= 5 V All 1 -0.53 mA current (source) VO= 4.6 V 2 1/ -0.36 VIN= 0.0 V or VDD3 1/ -0.64 DD= 5 V All 1 -1.8 VO= 2.5 V 2 1/ -1.15 VIN= 0.0 V or VDD3 1/ -2.0 DD= 10 V All 1 -1.4 VO= 9.5 V 2 1/ -0.9 VIN= 0.0 V or VDD3 1/ -1.6 DD= 15 V All 1 -3.5 VO= 13.5 V 2 1/ -2.4 VIN= 0.0 V

43、or VDD3 1/ -4.2 Output voltage, VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V high VDD= 10 V, no load 1/ 9.95 DD= 15 V, no load 3 14.95 Output voltage, VOLVDD= 5 V, no load 1/ All 1, 2, 3 0.05 V low VDD= 10 V, no load 1/ 0.05 DD= 15 V, no load 0.05 See footnotes at end of table.Provided by IHSNot for R

44、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol T

45、est conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Input voltage, low VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVOL V VDD= 20 V, VIN= VDDor GND 7 VDD/2 VDD/2 DD= 18 V, VIN= VDDor GND All 8A M, D, P, L, R 2/ 7

46、VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ 7 Input capacitance CINSee 4.4.1c Any input 1/ All 4 7.5 pF See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96622 DEFENSE SUPPL

47、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Propagation tPHL1, VDD= 5 V, VIN= V

48、DDor GND All 9 300 ns delay, clock to tPLH110, 11 405 Q or Q 4/ M, D, P, L, R 2/ All 9 405 VDD= 10 V, VIN= VDDor GND All 9 1/ 130 VDD= 15 V, VIN= VDDor GND 9 1/ 90 Propagation tPHL2VDD= 5 V, VIN= VDDor GND All 9 400 ns delay, set to 10, 11 540 Q, reset to Q 4/ M, D, P, L, R 2/ All 9 540 VDD= 10 V, VIN= VDDor GND All 9 1/ 170 VDD= 15 V, VIN= VDDor GND 9 1/ 120 Propagation tPLH2VDD= 5 V, VIN= VDDor GND All 9 300 ns delay, set to 10, 11 405 Q, reset to Q 4/ M, D, P, L, R 2/ All 9 405 VDD= 10 V, VIN= VDDor GND All 9 1/ 130 VDD= 15 V, V