1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-07-29Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi
2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi
3、ngtion Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURNYOUR COMPLETED FORM TO EIT
4、HER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENTISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THISFORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center Columbus5. CAGE CODE672686
5、. NOR NO.5962-R400-97a. TYPED NAME (First, Middle Initial,Last)3990 East Broad StreetColumbus, OH 43216-50007. CAGE CODE672688. DOCUMENT NO.5962-966269. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, PRESETTABLEDIVIDE-BY-“N” COUNTER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO
6、.No users listed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R400-97“.Revisions date column; add “97-07-29“.Revision level block; a
7、dd “B“.Rev status of sheets; for sheets 21 change from “A“ to “B”.Rev status of sheets; for sheets 22 change from “A“ to “B”.Sheet 21: NOR 5962-R227-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”Revision Level Block: change from “A”
8、 to “B”Sheet 22: NOR 5962-R227-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to “PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “Revision Level Block: change from
9、“A” to “B”12. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised
10、document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VAc. TYPED NAME (First, Middle Initial, Last)d. TITLEChief, Custom Microelectronicse. SIGNATURERAYMOND MONNINf. DATE SIGNED(YYMMDD)97-07-2915a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VAb. REVISION COMPLETED (Signature)RONALD COUCHc. D
11、ATE SIGNED(YYMMDD)97-07-29DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-02-28For
12、m ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Se
13、nd comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Ar
14、lington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIV
15、ITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R227-97a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672
16、688. DOCUMENT NO.5962-966269. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS,PRESETTABLE DIVIDE-BY-“N” COUNTER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users listed.a. CURRENT b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONShee
17、t 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R227-97“.Revisions date column; add “97-02-28“.Revision level block; add “A“.Rev status of sheets; for sheets 1, 4, and 16 through 22, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Mic
18、rocircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 16 through 22: Add attached appendix A.CONTINUED ON NEXT SHEET14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used i
19、n manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA
20、L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)97-02-2815a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (Signature)CHARLES F. SAFFLE, JR.c. DATE SIGNED(YYMMDD)97-02-28DD Form 1695, APR 92 Previous editions are obsolete.Provi
21、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96626REVISION LEVELASHEET16DESC FORM 193AJUL 94Document No: 5962-96626Revision: AAPPENDIX A NOR No: 5962-R227-97A
22、PPENDIX A FORMS A PART OF SMD 5962-96626 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersappr
23、oved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space applic
24、ation (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5962 R 96626 01 V 9 AFederal RHA Device Device Die DieStock clas
25、s designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The
26、 device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 4018B Radiation Hardened, CMOS,presettable divide-by-N counter02 4018BN Radiation Hardened, CMOS,presettable divide-by-N counter,neutron irradiated dieProvided by IHSNot for ResaleNo reproduc
27、tion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96626REVISION LEVELASHEET17DESC FORM 193AJUL 94Document No: 5962-96626Revision: AAPPENDIX A NOR No: 5962-R227-97APPENDIX A FORMS A PART OF SMD 5962-
28、96626 Sheet: 3 of 8 10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions, bon
29、dingpad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product andvariant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01, 02 A-110.2.4.2 Die Bonding pad locations and Electrical functions.Die
30、 Types Figure number01, 02 A-110.2.4.3 Interface Materials.Die Types Figure number01, 02 A-110.2.4.4 Assembly related information.01, 02 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See paragraph 1.4 within the
31、 body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the following specifications,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specificati
32、ons andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-9
33、6626REVISION LEVELASHEET18DESC FORM 193AJUL 94Document No: 5962-96626Revision: AAPPENDIX A NOR No: 5962-R227-97APPENDIX A FORMS A PART OF SMD 5962-96626 Sheet: 4 of 8 SPECIFICATIONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSMIL-STD-883 - Test Method
34、s and Procedures for Microelectronics.HANDBOOKMILITARYMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activi
35、ty or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device clas
36、ses Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions. The d
37、esign, construction and physical dimensions shall be as specifiedin MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and
38、electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly relate
39、d information shall be as specified in 10.2.4.4 and figure A-1.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96626REVISION LEVELASHEET19DESC FORM 193AJUL
40、94Document No: 5962-96626Revision: AAPPENDIX A NOR No: 5962-R227-97APPENDIX A FORMS A PART OF SMD 5962-96626 Sheet: 5 of 8 30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body of thisdocument.30.3 Electrical performance characterist
41、ics and post-irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document.30.4 Electrical test requirements. The wafer probe test requirements shall include fu
42、nctional and parametric testing sufficient tomake the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer l
43、ot number, the certification mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QM” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535
44、 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requir
45、ements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shallbe provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and ins
46、pection. For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or function as described herein.40.2 Screening.
47、 For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c)
48、 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM5004.40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as r
49、adiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, 4.4.4.4 and 4.4.4.5.Provided
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