DLA SMD-5962-96640 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS EXPANDABLE 4-WIDE 2-INPUT AND-OR-INVERT GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体扩展4宽度2输入与非门硅单片电路数字微电路》.pdf

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-01-16Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R023-98a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-966409. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, EXPANDABLE 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON10. REVISION LETT

6、ER11. ECP NO.No users listed.a. CURRENT-b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R023-98“.Revisions date column; add “98-01-16“.Revision le

7、vel block; add “A“.Rev status of sheets; for sheets 1, 4, and 14 through 20, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 14 through 20: Add attached appendix

8、A.CONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and

9、furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)98-01-1615a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. RE

10、VISION COMPLETED (Signature)CHARLES F. SAFFLE, JR.c. DATE SIGNED(YYMMDD)98-01-16DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUM

11、BUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET14DSCC FORM 2234APR 97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under

12、 the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance with MI

13、L-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected

14、in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5962 R 96640 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q

15、and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 4086B Radiation Hardened, CMOS,expandable 4-wide 2-inpu

16、tAND-OR-Invert gate10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWI

17、NGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET15DSCC FORM 2234APR 97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640 Sheet: 3 of 8 10.2.4 Die Details. The die details designation shall be a unique

18、 letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01 A-110.2.4.2

19、Die Bonding pad locations and Electrical functions.Die Types Figure number01 A-110.2.4.3 Interface Materials.Die Types Figure number01 A-110.2.4.4 Assembly related information.01 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operatin

20、g conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the issue listed in that issue of the

21、Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SU

22、PPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET16DSCC FORM 2234APR 97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, Genera

23、l Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin, and handbook required by manufacturers in conn

24、ection with specificacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing shall take precedence.

25、30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit

26、or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specifiedin MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions s

27、hall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as specifie

28、d in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body ofthis document.Provided by

29、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET17DSCC FORM 2234APR 97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX

30、A FORMS A PART OF SMD 5962-96640 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocumen

31、t.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficientto make the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or mult

32、iple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. F

33、or device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix

34、shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcir

35、cuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in t

36、he QMplan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the

37、 criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction

38、 or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET18DSCC FORM 2234APR 97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640

39、 Sheet: 6 of 8 40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged d

40、ie shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturers QM plan oras sp

41、ecified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical andelectrostatic protection.60. NOTES60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-

42、PRF-38534 for government microcircuit applications (original equipment), design applications andlogistics purposes.60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions. The abbreviati

43、ons, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-STD-1331.60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 he

44、rein) to DSCC-VA and haveagreed to this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET19DSCC FORM 2234APR 97Document No: 5

45、962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640 Sheet: 7 of 8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 1295 x 1245 microns.Die Thickness: 20 +/-1 mils.o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS2114133 12115 106789NOTE: Pad numbers reflect te

46、rminal numbers when placed in Case Outlines C, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET20DSCC FORM 2234APR

47、97Document No: 5962-96640Revision: AAPPENDIX A NOR No: 5962-R023-98APPENDIX A FORMS A PART OF SMD 5962-96640 Sheet: 8 of 8 o INTERFACE MATERIALSTop Metallization: Al 11.0kA - 14.0kABackside Metallization NoneGlassivationType: PSGThickness 10.4kA - 15.6kASubstrate: Single crystal silicono ASSEMBLY RE

48、LATED INFORMATIONSubstrate Potential: Floating or Tied to VDD.Special assemblyinstructions: Bond pad #14 (VDD) first.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETINDATE: 98-01-16Approved sources of supply for SMD 5962-96640 are listed below for immediate acquisition information only and shall be addedto MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include theaddition or deletion of sources. The vendors listed below have agreed t