DLA SMD-5962-96643 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器硅单片电路数字微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R010-98. 97-12-12 Monica L. Poelking B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-02-02 Thomas M. Hess REV SHET REV B B B B B B B B SHEET 15 1

2、6 17 18 19 20 21 22 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING

3、IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-27 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, HEX BUFFER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-96643 SHEET 1 OF 22 DSC

4、C FORM 2233 APR 97 5962-E132-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

5、OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and a

6、re reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96643 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see

7、 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked dev

8、ices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4503B Radiation ha

9、rdened CMOS, hex buffer 02 4503BN Radiation hardened CMOS, hex buffer with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certificati

10、on to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descr

11、iptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or ne

12、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltag

13、e range . -0.5 V dc to + 20.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case E 24C/W Case X 29C/W Thermal resi

14、stance, junction-to-ambient (JA): Case E 73C/W Case X 114C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E 0.68 W Case X 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C

15、to +125C Input voltage (VIN) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose

16、rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent s

17、pecified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circu

18、its, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The li

19、mits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following

20、rate: Case E. 13.7 mW/C Case X. 8.8 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBU

21、S, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawi

22、ngs. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a

23、 conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual it

24、em requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item r

25、equirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The d

26、esign, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The termi

27、nal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation paramete

28、r limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the sub

29、groups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN num

30、ber is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class

31、M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provid

32、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and

33、V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply

34、 in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M,

35、 the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawin

36、g. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For devic

37、e class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device c

38、lass M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

39、OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 1.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 30 1, 3 1/ 2.0 VDD= 10 V V

40、IN= 0.0 V or VDDAll 2 1/ 60 1, 3 1/ 2.0 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2.0 VDD= 20 V, VIN= 0.0 V or VDDAll 2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 2.0 A 1 2.1 2 1/ 1.3 VDD= 5 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 2.6 1 5.5 2 1/ 3.8 VDD= 10 V VO

41、= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 6.5 1 16.1 2 1/ 11.2 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 19.2 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

42、NG SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1

43、 -1.02 2 1/ -0.7 VDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -1.2 1 -4.8 2 1/ -3.0 VDD= 5 V VO= 2.5 V VIN= 0.0 V or VDDAll 3 1/ -5.8 1 -2.6 2 1/ -1.8 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -3.1 1 -6.8 2 1/ -4.8 High level output current (source) IOHVDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 3

44、 1/ -8.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 0.05 VDD= 10 V, no load 1/ 1, 2, 3 0.05 Output voltage, low VOLVDD= 15 V, no load All 1, 2, 3 0.05 V VDD= 5 V VOH 4.5 V, VOL

45、9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5

46、000 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A Subgroups Min Max Units 9 70 Transition time 4/ VDD= 5.0 V, VIN= VDDor GND 10, 11 95 VDD= 10 V, VIN

47、= VDDor GND 9 1/ 40 tTHLVDD= 15 V, VIN= VDDor GND All 9 1/ 25 ns 9 90 Transition time 4/ VDD= 5.0 V, VIN= VDDor GND 10, 11 122 VDD= 10 V, VIN= VDDor GND 9 1/ 45 tTLHVDD= 15 V, VIN= VDDor GND All 9 1/ 35 ns 9 110 VDD= 5.0 V, VIN= VDDor GND All 10, 11 149 M, D, P, L, R 2/ All 9 149 VDD= 10 V, VIN= VDD

48、or GND 9 1/ 50 Propagation delay time 4/ tPHLVDD= 15 V, VIN= VDDor GND All 9 1/ 35 ns 9 150 VDD= 5.0 V, VIN= VDDor GND All 10, 11 203 M, D, P, L, R 2/ All 9 203 VDD= 10 V, VIN= VDDor GND 9 1/ 70 Propagation delay time 4/ tPLHVDD= 15 V, VIN= VDDor GND All 9 1/ 50 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96643 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 10