DLA SMD-5962-96652 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD BILATERAL SWITCH MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重双向转换开关硅单片电路数字微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R195-97. - thl 97-02-28 Monica L. Poelking B Changes in accordance with NOR 5962-R431-97. rc 97-08-08 Raymond Monnin C Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 03-07-0

2、1 Thomas M. Hess REV SHET REV C C C C C SHEET 15 16 17 18 19 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4

3、3216 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-28 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON AMSC N/A REVISION LEVEL

4、C SIZE A CAGE CODE 67268 5962-96652 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E428-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

5、 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice o

6、f case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96652 01 V X C Federal RHA Device D

7、evice Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the ap

8、propriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device typ

9、e Generic number Circuit function 01 4066B Radiation hardened, CMOS, quad bilateral switch 02 4066BN Radiation hardened, CMOS, quad bilateral switch with neutron irradiated die. 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as f

10、ollows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case out

11、line(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X DFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for

12、device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2

13、/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc DC input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN) 10 mA Device dissipation per output transistor 100 mW Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C The

14、rmal resistance, junction-to-case (JC): Case outline C. 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C. 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C. 0.68 W Case outline

15、 X . 0.43 W 1.4 Recommended operating conditions. Supply voltage range (VDD) +3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT) +0.0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenom

16、enon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse). 5 x 108Rads (Si)/s 5/ Dose rate latch-up. 2 x 108Rads (Si)/s 5/ Dose rate survivability. 5 x 1011Rads (Si)/s 5/ Neutron irradiated (device type 02). 1 x 1014neutrons/cm21/ Str

17、esses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over

18、 the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C. 13.5 mW/C Case outline X. 8.6 mW/C

19、5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97

20、 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

21、 of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcir

22、cuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are av

23、ailable from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this docume

24、nt, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device man

25、ufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herei

26、n. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, a

27、ppendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation test

28、 connections. The irradiation test connections shall be as specified in table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISIO

29、N LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case o

30、perating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manuf

31、acturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be

32、marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PR

33、F-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawin

34、g (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply fo

35、r this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for dev

36、ice classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involvi

37、ng devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required doc

38、umentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Res

39、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Unit Test Symbol Con

40、ditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max 1, 3 1/ 0.25 VDD= 5.0 V, VIN= 0.0 V or VDD2 1/ 7.5 1, 3 1/ 0.5 VDD= 10 V, VIN= 0.0 V or VDD2 1/ 15.0 1, 3 1/ 0.5 VDD= 15 V, VIN= 0.0 V or VDD2 1/ 30.0 1 0.5 VDD= 20 V, VIN= 0.0 V or VDD2 50.0 M, D, P, L, R 2/ 1 25

41、 Supply current IDDVDD= 18 V, VIN= VDDor 0.0 V All 3 0.5 A 1 -100 VDD = 20 V2 -1000 IOZLVC= 0 V VOS= 0.0 V, VIS= 18 V VOS= 18 V, VIS= 0.0 V VDD = 18 V3 -100 1 100 VDD = 20 V2 1000 Input/output leakage current (switch off) IOZHVC= 0 V VOS= 0.0 V, VIS= 18 V VOS= 18 V, VIS= 0.0 V VDD = 18 VAll 3 100 nA

42、 VC= VDD= 5 V, RL= 10 k returned to (VDD VSS)/2 VIS= VSSto VDD1 1050 VC= VDD= 10 V, RL= 10 k returned to (VDD VSS)/2 VIS= VSSto VDD1 400 VC= VDD= 15 V, RL= 10 k returned to (VDD VSS)/2 VIS= VSSto VDD1 240 VDD= 5 V 2 1300 VDD= 5 V 3 800 VDD= 10 V 2 550 VDD= 10 V 3 310 VDD= 15 V 2 320 On resistance RO

43、NVDD= 15 V All 3 220 VDD= 5 V, IIS VDD/2 VOL VDD/2 V Input capacitance CIN1/ Any input, See 4.4.1c All 4 7.5 pF 9 40 VDD= 5 V, VIN= VDDor GND, 4/ VSS= GND, VC= VDD10, 11 54 M, D, P, L, R 2/ 9 54 VDD= 10 V, VIN= VDDor GND, VSS= GND, VC= VDD9 1/ 20 Propagation delay time, signal input to signal output

44、 tPHL, tPLH VDD= 15 V, VIN= VDDor GND, VSS= GND, VC= VDD9 1/ 15 ns 9 70 VIS= VDD= 5 V 5/ 10, 11 95 VDD= 10 V 5/ 9 1/ 40 Propagation delay time, turn-on, turn-off tPHZ/ZH, tPLZ/ZL VDD= 15 V 5/ All 9 1/ 30 ns 1/ These tests are controlled via design or process and are not directly tested. These parame

45、ters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R“ level. When performing post irradiation electrical measure

46、ments for any RHA level, TA= +25C. 3/ VDD= 2.8 V and 3.0 V, RL = 100 k to VDD. VDD= 20 V and 18 V, RL= 10 k to VDD. 4/ CL= 50 pF, RL= 200 k, input rise and fall times (tr, tf) 20 ns. 5/ CL= 50 pF, RL = 1 k, input rise and fall times, (tr, tf) 20 ns. Provided by IHSNot for ResaleNo reproduction or ne

47、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 Device type All Case outlines C and X Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13

48、14 IN/OUT A OUT/IN A OUT/IN B IN/OUT B CONT B CONT C VSSIN/OUT C OUT/IN C OUT/IN D IN/OUT D CONT D CONT A VDDFIGURE 1. Terminal connections. EACH SWITCH 1/ INPUT OUTPUT VCVISVOS1 0 0 1 1 1 0 0 OPEN 0 1 OPEN1/ Positive logic: Switch on VC= “1”, Switch off VC= “0”. FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 10 DSCC FORM 2234 APR 97 4. QUALITY ASSURANCE PR