1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R234-97. 98-02-28 Monica L. PoelkingB Changes in accordance with NOR 5962-R420-97.97-08-14 Monica L. PoelkingC Update boilerplate and appendix A. Editorial changes throughout. - tmh 00-06-06Monica L. PoelkingREVSH
2、EETREV CCCCCCCCSHEET 15 16 17 18 19 20 21 22REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Joseph A. KerbyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYMonica L. PoelkingCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPR
3、OVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-01-29MICROCIRCUIT, DIGITAL, RADIATIONHARDENED CMOS, 4X4 MULTIPORT REGISTER,MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-96682SHEET1 OF 22DSCC FORM 2233APR 97 5962-E239-00DISTRIBUTION STATEMEN
4、T A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2DSCC FORM 2234APR 971.
5、SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available,
6、 a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 R 96682 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator type class outline finish
7、designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the
8、 MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 40108B Radiation hardened CMOS 4X4
9、multiport register1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuit
10、s in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleJ CDIP2-T24 24 Dual-in-line packageX CDFP4-F24
11、24 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96682DE
12、FENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VDD). -0.5 V dc to +20 V dcInput voltage range -0.5 V dc to VDD + 0.5 VdcDC input current, any one input 10 mADevice dissipation per output transi
13、stor 100 mWStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case J . 25C/WCase X. 24C/WThermal resistance, junction-to-ambient (JA):Case J . 65C/WCase X. 89C/WJunction temperature (TJ). +175CMaximum power dissipati
14、on at TA = +125C (PD): 4/Case J . 0.77 WCase X. 0.56 W1.4 Recommended operating conditions.Supply voltage range (VDD). 3.0 V dc to +18 V dcCase operating temperature range (TC) . -55C to +125CInput voltage (VIN). 0 V to VDDOutput voltage (VOUT) . 0 V to VDDRadiation features:Total dose . 1 x 105Rads
15、 (Si)Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or latchup (see 4.4.4.4). 75 MEV/(cm2/mg) 5/Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/Dose rate latch-up . 2 x 108Rads(Si)/s 5/Dose rate survivability . 5 x 1011Rads(Si)/s 5/2. APPLICABLE DOCUMENTS2.1 Government
16、specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and St
17、andards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-
18、STD-1835 - Interface Standard For Microcircuit Case Outlines.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VS
19、S.3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of-55C to +125C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)at the f
20、ollowing rate:Case J 15.4 mW/CCase X . 11.2 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISI
21、ON LEVELCSHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocumen
22、t Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws an
23、d regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themo
24、dification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements fo
25、r microcircuit die, see appendix A to the document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case ou
26、tlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth tables. The truth tables shall be as specified on figure 2.3.2.4 Radiation exposure circuit. The radiation test connections shall be a
27、s specified in table III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullcase operating t
28、emperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN
29、may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking
30、for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compl
31、iance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein)
32、. For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall af
33、firm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL
34、-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliveredto this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96682DEFENSE SUPPLY CENTER C
35、OLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9
36、 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microci
37、rcuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 40 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in acc
38、ordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix
39、 A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be cond
40、ucted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made avail
41、able to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as sp
42、ecified in table IIA herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be ma
43、intained underdocument revision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, a
44、s applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535
45、, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 thro
46、ugh 4.4.4).4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance withMIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 ofMIL-PRF-38535 permits alternate in-line control testing. Quality confor
47、mance inspection for device class M shall be inaccordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall bethose specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provide
48、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.LimitsTest SymbolCondi
49、tions-55C 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL VDD/2VOL VDD/2VInput capacitance CIN 1/ Any input, See 4.4.1c All 4 7.5 pF9 720.0VDD = 5 V, VIN = VDD or GND10, 11 972.0M, D, L, R 2/ 9 972.0VDD = 10 V, VIN = VDD or GND 1/ 9 280.0Propagation delay time,CLOCK or WRITE ENABLEto QnA or QnBtPHL1
copyright@ 2008-2019 麦多课文库（www.mydoc123.com）网站版权所有
备案/许可证编号：苏ICP备17064731号-1