DLA SMD-5962-96698 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER REGISTER THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILI.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate to MIL-PRF-38535 requirements. - LTG 08-12-17 Thomas M. Hess REV SHET REV A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7

2、 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DE

3、PARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-02-01 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER/ REGISTER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-96698 SHEET 1 OF 29 DSCC FORM 2233

4、 APR 97 5962-E096-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96698 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This draw

5、ing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation

6、Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96698 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3)

7、 / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropri

8、ate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ABTH18646A Scan test device with 18-bit transceiver and register, three-state outputs, TTL compatible inputs

9、1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordanc

10、e with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 68 Quad flat pack 1.2.5 Lead finish. The

11、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96698 DEFENSE SUPPLY CENTER COLUMBUS CO

12、LUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (except I/O ports) (VIN) . -0.5 V dc to +7.0 V dc 4/ DC input voltage range (I/O ports) (VIN). -0.5 V dc to +5.5 V dc

13、 4/ DC output voltage range (VOUT) . -0.5 V dc to +5.5 V dc 4/ DC output current (IOL) (per output) (A port or TDO) +96 mA DC output current (IOL) (per output) (B port). +30 mA DC input clamp current (IIK) (VIN 0.0 V). -18 mA DC output clamp current (IOK) (VOUT 0.0 V). -50 mA Storage temperature ran

14、ge (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . 1.9C/W Junction temperature (TJ) +175C Maximum power dissipation (PD) (at TA= 55C in still air) . 607 mW 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.

15、5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCMaximum low level input voltage (VIL) +0.8 V Minimum high level input voltage (VIH). +2.0 V Maximum high level output current (IOH) -24 mA Maximum low level output current (IOL) +48 mA Maximum input rise or fall rate (t/V). 10 ns/V Case o

16、perating temperature range (TC). -55C to +125C 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits

17、 for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ The input and output negative voltage ratings may be exceeded provided that the input and output clamp current ratings are observed. 5/ Power dissipation values are deriv

18、ed using the formula PD= VCCICC+ nVOLIOL, where VCCand IOLare as specified in 1.4 above, ICCand VOLare as specified in table I herein, and n represents the total number of outputs. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

19、 DRAWING SIZE A 5962-96698 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the

20、extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Me

21、thod Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.dap

22、s.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the

23、 documents which are DOD adopted are those listed in the issue of the DODISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documents cited in the solicitation. INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE) IEE

24、E Standard 1149.1 - IEEE Standard Test Access Port and Boundary Scan Architecture. (Applications for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 Hoes Lane, Piscataway, NJ 08854-4150.) (Non-Government standards and other publications are normally available

25、 from the organizations that prepare or distribute the documents. These documents may also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this dra

26、wing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spec

27、ified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN

28、 class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case out

29、line. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Block diagram. The block diagram shall be as specified on

30、figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96698 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.2.5 Test access port controller and sc

31、an test registers The test access port (TAP) controller and scan test registers shall be as specified on figure 5. 3.2.6 Ground bounce load circuit and wave forms The ground bounce load circuit and wave forms shall be as specified on figure 6. 3.2.7 Switching waveforms and test circuit. The switchin

32、g waveforms and test circuit shall be as specified on figure 7. 3.2.8 Radiation exposure circuit. The radiation exposure circuit shall be as specified when available. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical pe

33、rformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each su

34、bgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not mark

35、ing the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance m

36、ark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be

37、 required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). Th

38、e certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, app

39、endix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for devic

40、e class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activ

41、ity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in mi

42、crocircuit group number 126 (see MIL-PRF-38535, appendix A). 3.11 IEEE 1149.1 compliance. This device shall be compliant with IEEE 1149.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96698 DEFENSE SUPPLY

43、CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 3/ Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified VCCGroup A subgroups Min Max Un

44、it Negative input clamp voltage 3022 VIC-For input under test IIN= -18 mA 4.5 V 1, 2, 3 -1.2 V 4.5 V 1, 2, 3 3 IOH= -3.0 mA 5.0 V 1, 2, 3 3 High level output voltage 3006 VOHFor all inputs affecting output under test VIN= 2.0 V or 0.8 V IOH= -24.0 mA4.5 V 1, 2, 3 2 V Low level output voltage 3007 VO

45、LFor all inputs affecting output under test VIN= 2.0 V or 0.8 V IOL= 48 mA 4.5 V 1, 2, 3 0.55 V mCLKAB, mCLKBA mDIR, mSAB, mSBA, or TCK 0.0 V and 5.5 V 1, 2, 3 +1.0 A mAn or mBn ports 5.5 V 1, 2, 3 +20.0 A Input current high 3010 IIH4/ For input under test VIN= VCCmOE,TDI, or TMS 5.5 V 1, 2, 3 +10.0

46、 A mCLKAB, mCLKBA mDIR, mSAB, mSBA, or TCK 0.0 V and 5.5 V 1, 2, 3 -1.0 A mAn or mBn ports 5.5 V 1, 2, 3 -20 A Input current low 3009 IIL4/ For input under test VIN= GND mOE,TDI, or TMS 5.5 V 1, 2, 3 -150 A VIN= 0.8 V 75 500 Input bus hold current Ihold4/ VIN= 2.0 V mAn or mBn ports 4.5 V 1, 2, 3 -7

47、5 -500 A Three-state output leakage current high (TDO only) 3021 IOZHVOUT= 2.7 V, mOE = 2.0 V 5.5 V 1, 2, 3 10 A Three-state output leakage current low (TDO only) 3020 IOZLVOUT= 0.5 V, mOE = 2.0 V 5.5 V 1, 2, 3 -10 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or netw

48、orking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96698 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Limits 3/ Symbol Test conditions 2/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified VCCGroup A subgroups Min Max Unit Off-state leakage current IOFFFor input or output under test VINor VOUT= 4.5 V All other pins at 0.0 V 0.0 V 1 100 A High state leakage