DLA SMD-5962-96707 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BIDIRECTIONAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射.pdf

1、LTR A B REV STATUS OF SHEETS DESCRIPTION DATE (YR-MO-DA) APPROVED 97-1 0-22 Monica L. Poelking 00-06-1 4 Monica L. Poelking Changes in accordance with NOR 5962-R320-97. Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh R EV SHEET PMIC NIA BBBBBBBBBBBBBB

2、12 3 4 5 6 7 8 9 1011 1213 14 PREPAREDBY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAW1 NG THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY Monica L. Poelkin

3、g DRAWING APPROVAL DATE 95-1 2-1 9 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING OCTAL BIDIRECTIONAL BUS TRANSCEIVER SILICON WITH THREE-STATE OUTPUTS, MONOLITHIC REVISION LEVEL B 5962-96707 I I I I 1 OF 17 I SHEET I DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for

4、 public release; distribution is unlimited. 5962-E300-00 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consistin

5、g of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

6、SIZE A REVISION LEVEL SHEET B 2 1.2 m. The PIN is as shown in the following example: 96707 Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. De

7、vice classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

8、 non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit function as follows: Device tvpe o1 02 03 11 04 11 Generic number ACS245 ACS245A ACS245-02 ACS245A-02 Circuit function Radiation hardened SOS, advanced CMOS, noninverting octal bidirectional bus transceiver with three-sta

9、te outputs Radiation hardened SOS, advanced CMOS, noninverting octal bidirectional bus transceiver with three-state outputs Radiation hardened SOS, advanced CMOS, noninverting octal bidirectional bus transceiver with three-state outputs Radiation hardened SOS, advanced CMOS, noninverting octal bidir

10、ectional bus transceiver with three-state outputs 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant,

11、 non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle R CDIP2-

12、T20 20 dual-i n-line package X CD FP4- F20 20 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. - 11 Device type -02 is the same as device type -01 except that the device type -02 products are

13、manufactured at an overseas wafer foundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry. I 5962-96707 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo re

14、production or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinas. 1/ 21 31 Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to VCC + 0.5 V dc DC input current, any one input DC output current, any one output (IOUT) and the absol

15、ute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. Devices supplied to this drawing meet all levels M, D, L, R, and F of irradiation. However, this device is only tested at the “F“ level. Pre and post irradiation values are identica

16、l unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25“C. - 2/ - 3/ - 4/ - 5/ ForceJMeasure functions may be interchanged. Power dissipation capacitance (CPD) determines both the power consumption (PD) and current consumption (Is

17、). Where PD = (CPD -k CL) (VCC x vCC)f -k (ICC x VCC) IS = (CPD -k CL) VCCf -k ICC f is the frequency of the input signal. The test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input to output logic patterns per function shall

18、be guaranteed, if not tested, to the truth table in figure 2 herein. For VOUT measurements, L 0.5 V and H 2 4.0 V. - 6/ - 7/ AC limits at Vcc = 5.5 V are equal to the limits at Vcc = 4.5 V. For propagation delay tests, all paths must be tested. STANDARD MICROCIRCUIT DRAWING I 5962-96707 DSCC FORM 22

19、34 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Device type I All Inputs Case outlines I Operation R and X DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Term inal Terminal number symbol I SIZE A REVISION LEVEL SHEET B 11 1 2 3 4

20、 5 6 7 8 9 10 DIR AO Al A2 A3 A4 A5 A6 A7 GND Term inal Term inal number symbol I 11 12 13 14 15 16 17 18 19 20 B7 B6 B5 B4 B3 B2 B1 BO OE vcc - FIGURE 1. Terminal connections. A data to B bus H X Isolation H = High voltage level L = Low voltage level X = Immaterial FIGURE 2. Truth table. I 5962-967

21、07 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

22、 4321 6-5000 1 OF 8 A* REVISION LEVEL SHEET B 12 e 4 DIR FIGURE 3. Loqic diaqram. I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96707 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduct

23、ion or networking permitted without license from IHS-,-,-90% vcc vcc 10% vcc “e 0.5 vcc 0.0 v tpHL != DATA INPUT I DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 vcc - 90% vcc 1 f INPUT 10% vcc OE 0.5 Vcc r 0.0 v - - LCtPLZ = vcc 0.2 vcc VOL OUTPUT 0.5 Vcc J / SIZE A REVISION LEVEL SHEET

24、B 13 OUTPUT VOH 2 0.8 vcc 0.5 vcc BO.0 v NOTES: 1. 2. 3. 4. 5. When measuring tPZL and tPLZ, S1 is closed and S2 is open. When measuring tpLH, tpHL, tpZH, and tpHZ, S1 is open and S2 is closed. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). RL = 500a or equivalent. Input

25、 signal from pulse generator: VIN = 0.0 V to Vcc; PRR 10 MHz; t, 3.0 ns; tf 3.0 ns; t, and tf shall be measured from 10% Vcc to 90% Vcc and from 90% Vcc to 10% Vcc, respectively. FIGURE 4. Switchinq waveforms and test circuit. I 5962-96707 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided

26、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where op

27、tion 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 an

28、d herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Parameters 11 a. Tests shall be as specified in table IIA herein. Delta limits b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and

29、 V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). Subgroup 4 (CIN, Cl10 and CPD measurement) shall be measured only for the initial qualification and after process

30、 or design changes which may affect capacitance. CIN, C110shall be measured between the designated terminal and GND at a frequency of 1 MHz. For CIN, Cl10 and CPD the tests shall be sufficient to validate the limits defined in table I herein . c. Icc TABLE IIA. Electrical test requirements. 11 PDA a

31、pplies to subgroup 1 and 7. 21 PDA applies to subgroups 1, 7, 9 and deltas. - 31 Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see Table i) *4 lOL/lOH lOZL/lOZH 11 5% f200 nA DE

32、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. REVISION LEVEL SHEET B 14 STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96707 DSCC FORM 2234 APR 97 Provided by IHSNot f

33、or ResaleNo reproduction or networking permitted without license from IHS-,-,-4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisio

34、n level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 Of MIL-STD-883. DEFENSE SUPPLY CENTER COLUMBU

35、S COLUMBUS, OHIO 4321 6-5000 b. TA = +125“C, minimum. SIZE A REVISION LEVEL SHEET B 15 c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, o

36、r approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring

37、 or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be

38、 as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical parameters shall be as

39、 specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1 O1 9 and as specified herein. 4.4.4.1.1 Accelerated aqinq test. Accelerated aging tests shall be performed on all devices requiring a RHA

40、level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25“C 15“c. Testing shall be performed at initial qualification and after any design or process chang

41、es which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test

42、structures at technology qualification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL- STD-883 and herein (see 1.4 herein). a. Transient

43、 dose rate upset testing shall be performed at initial qualification and after any design or process changes which may effect the RHA performance of the devices. Test 1 O devices with O defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be perfor

44、med as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Sinde event phenomena SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate

45、SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the di

46、e surface and 60“ to the normal, inclusive (.e. O“ a b. The fluence shall be t 1 O0 errors or t 1 O6 ions/cm2. c. The flux shall be between 10 and 1 O5 ions/cm2/s. The cross-section shall be verified to be flux independent by angle a 60“). No shadowing of the ion beam due to fixturing or package rel

47、ated effects is allowed. measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be t 20 microns in silicon. e. The test temperature shall be +25“C and the maximum rated operating temperature 11 0C. I 5962-96707 STANDARD MICROCIRCUIT

48、DRAWING DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection

49、shall be as specified as follows: 4.5.1 Voltaqe and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. Open Ground Vcc=5 V f 0.5 V 10 5. PACKAGING 1, 2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 5.1 Packaqinq requirements. The requirements for packaging