DLA SMD-5962-96708 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS 9-BIT ODD EVEN PARITY GENERATOR CHECKER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 9-BIT奇偶发生器 硅单片电路数字微电路》.pdf

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R321-97. 97-10-22 Monica L. PoelkingB Changes in accordance with NOR 5962-R032-99.99-02-19 Monica L. PoelkingC Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorialchanges throughout. - tmh00-06-14

2、 Monica L. PoelkingREVSHEETREV CCCCCCCCSHEET 15 16 17 18 19 20 21 22REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Thanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE

3、BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-12-19MICROCIRCUIT, DIGITAL, RADIATIONHARDENED ADVANCED CMOS, 9-BIT ODD/EVENPARITY GENERATOR CHECKER, MONOLITHICSILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-96708SHEET1 OF 22DSCC FOR

4、M 2233APR 97 5962-E303-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96708DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-50

5、00REVISION LEVELCSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) andspace application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Pa

6、rt or IdentifyingNumber (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN. The PIN is as shown in the following example:5962 F 96708 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead s

7、tock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are markedwith the appropriate RHA designa

8、tor. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levelsand are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit

9、 function01 ACS280 Radiation hardened SOS, advanced CMOS,odd/even parity generator checker02 ACS280-02 1/ Radiation hardened SOS, advanced CMOS,odd/even parity generator checker1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as fo

10、llows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline

11、(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleC CDIP2-T14 14 dual-in-line packageX CDFP3-F14 14 flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A f

12、or device class M.1/ Device type -02 is the same as device type -01 except that the device type -02 products are manufactured at an overseas waferfoundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device, material that issupplied by an overse

13、as foundry.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96708DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage

14、 range (VCC) . -0.5 V dc to +7.0 V dcDC input voltage range (VIN). -0.5 V dc to VCC+ 0.5 V dcDC output voltage range (VOUT) -0.5 V dc to VCC+ 0.5 V dcDC input current, any one input (IIN) . 10 mADC output current, any one output (IOUT) 50 mAStorage temperature range (TSTG) -65C to +150CLead temperat

15、ure (soldering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case outline C. 24C/WCase outline X. 30C/WThermal resistance, junction-to-ambient (JA):Case outline C. 74C/WCase outline X. 116C/WJunction temperature (TJ) . +175CMaximum package power dissipation at TA= +125C (PD): 4/Case o

16、utline C. 0.68 WCase outline X. 0.43 W1.4 Recommended operating conditions. 2/ 3/Supply voltage range (VCC) . +4.5 V dc to +5.5 V dcInput voltage range (VIN) . +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage

17、 (VIH) . 70% of VCCCase operating temperature range (TC) . -55C to +125CMaximum input rise and fall time at VCC= 4.5 V (tr, tf) 10 ns/VRadiation features:Total dose 3 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4). 100 MeV/(cm2/mg) 5/Dose r

18、ate upset (20 ns pulse). 1 x 1011Rads (Si)/s 5/Latch-up. None 5/Dose rate survivability. 1 x 1012Rads (Si)/s 5/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of thisdrawing to the extent specified herei

19、n. Unless otherwise specified, the issues of these documents are those listed in the issue of theDepartment of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing

20、, General Specification for.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximumlevels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameter

21、s specified herein shall apply over the full specified VCCrange and case temperature range of -55C to+125C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating isbased on JA) at the following rate:Case C . 13.5 mW/CCa

22、se X 8.6 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96708DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97

23、STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Mi

24、crocircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization DocumentOrder Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this

25、 drawing and the references cited herein, the text of thisdrawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemptionhas been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q a

26、nd V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification inthe QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be

27、inaccordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimension

28、s shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figu

29、re 1.3.2.3 Truth table. The truth table shall be as specified on figure 2.3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit.

30、 The radiation test connections shall be as specified in table III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and

31、 shall apply over the full case operatingtemperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests foreach subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 he

32、rein. In addition, the manufacturers PIN may also be marked aslisted in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA

33、designator shall stillbe marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be inaccordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q

34、“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listedmanufacturer in order to supply to the requir

35、ements of this drawing (see 6.6.1 herein). For device class M, a certificate of complianceshall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). Thecertificate of compliance submitted to DSCC-VA prior to listing as an approved

36、source of supply for this drawing shall affirm that theProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96708DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 97manufact

37、urers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, therequirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for devi

38、ce class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to thisdrawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein)involving devices acquired to this drawing is required for

39、 any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option toreview the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore

40、at theoption of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit groupnumber 39 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling

41、and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect theform, fit, or function as described herein. For device class M, sampling and inspection procedures shall be

42、 in accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on alldevices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with m

43、ethod5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document re

44、vision level controland shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015.(2) TA= +125C, minimum.b. Interim and fina

45、l electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the devicemanufacturers QM plan in accordance with MIL-PRF-

46、38535. The burn-in test circuit shall be maintained under documentrevision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specifythe inputs

47、, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 ofMIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device cl

48、ass Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordancewith MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A

49、, B, C, D, and Einspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96708DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance character