DLA SMD-5962-96760-1996 MICROCIRCUIT LINEAR DUAL JFET INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON《双路输入运算放大器硅单片电路线型微电路》.pdf

1、LTR PREPAREDBY RICK OFFICER DESCRIPTION DATE CVRmoaA) APPROVED CHECKED BY WESH PITHADIA APPROVED BY MICHAEL FRYE DRAWING APPROVAL DATE 96-02-01 REVISION LEVEL 4 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, LINEAR, DUAL JFET INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON I 5962

2、-96760 SIZE I CAF7YD distribution is unlimited. 5962-E294-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCWE 1.1 SEPpT. This drawing docunents two product assurance class levels consisting of high reliability (device classes Q and M) and spac

3、e application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Nutr (PIN). Uhen available, a choice of Raiatian Hardness Assurance (RHA) levels are reflected in the PIN. lhe PIN is as shown in the following exanple: 1.2 W. Feder

4、al RHA LfLL Device Device Case Lead II I 9676e stock class designetor type class outline finish designator (see 1.2.1) V Drawing nuiiber . are marked with the appropriate RHA designator. specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RIU device. (

5、sa 1.2.2) desi gnator (see 1.2.4) (sa 1.2.5) LU (see 1.2.3) 1.2.1 Device classes Q and V RHA marked devices met the MIL-PRF-38535 specified RHA levels and Device class M RHA marked devices meet the MIL-PRF-38535, appendix A 1.2.2 etvice . The device type(s) identify the circuit fvrcGion as follows:

6、-cuit fuKLbl SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 o1 5962-96760 REVISION LEVEL SHEET 2 LF412 Lon offset, low drift -1, JFET input operational enplifier 1.2.3 Device c- . The device class designator is a single letter identifying the product assurance

7、 level as follows: Device ccasS NiCe r- M Vendor self-certification to the requirements for MIL-STD-883 canpliant, non-JAN class level E microcircuits in accordance with MIL-PRF-38535, appmdix A a or v Certification and qualification to MIL-PRF-38535 1.2.4 Case outtinets) . The case outline(s) are a

8、s designated in MIL-STD-1835 and as follows: BLlline letter - G P mcyi -xa GDIP1-TB or CDIP2-Ta a a Can Dual - in- 1 ine 1.2.5 f inish. The lead finish is as specified in MIL-PRF-38535for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduc

9、tion or networking permitted without license from IHS-,-,-I 1.3 Absolute -U Supply voltage (*VS) . 118 V Differential input voltage i30 V U Input voltage range 115 V Output short circuit duration . Continuous 3 Pouer dissipation (PD): Case C .670InU CaseP . 670W hall be in accordance with MIL-PRF-38

10、535. ierein for groups A, 6, C, D, and E inspections (see 4.4.1 through 4.4.4). IIL-PRF-38535 including groups A, 6, C, D, and E inspections and as specified herein except where option 2 of IlL-PRF-38535 permits alternate in-line control testing. auality conformance inspection for device class M sha

11、ll be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be perfod for device class M ;hall be those specified in method 5005 of MIL-STD-883 and herein for groups A, 6, C, 0, and E inspections (see 4.4.1 ehrough 4.4.4). The burn-in test circuit The test circuit shal

12、l specify the inputs, outputs, biases, and power dissipation, as b. c. . Qualification inspection for device classes 4 and V 4.3 Qrolp E end-point electrical 1 parameters (see 4.4) Subgror48 (in accordonce with MIL-PRF-38535, table 111) I Device I class V Device class Q I - I 1 I - I U PDA applies t

13、o subgroup 1. . 4.4.2.1 a Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, 8, C, or D. The test circuit shall be maintained by the manufacturer vidcr docunent revision level control and shall be mede available to the preparing or acquiring activity upon request. te

14、st circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-3. The b. TA = +125*C, minim. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criter

15、ia for drvice cl-s P a . lhe steady-state life test duration, test condition and test tenpcrature, or approved alternatives shall be as specified in the device manufacturers W plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under docunnt revision level control by the devi

16、ce manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity rgon requcst. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-

17、STD-883. herein. 4.4.3 D . . The group D inspection end-point electrical parameters shall be as specified in table II 4.4.4 Grow E inswct ion. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. b. End-point electrical parameters sha

18、ll be as specified in table 11 herein. For device classes P and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A

19、for the RHA level being tested. defined in table 1 at TA = +25C 15“c, after exposure, to the subgroups specified in table II herein. Uhen specified in the purchase order or contract, a copy of the RHA delta limits shall be sLpplied. For device class M, the devices shall be All device classes must me

20、et the postirradiation end-point electrical paranieter limits as c. 5962-96760 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DATON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

21、- 5. PACKAGING 5.1 -. The rcquiremmts for packaging shall be in accordance with MIL-PRF-3535 for device clssscs Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 muse. Microcircuits conforming to this drawing are intended for use for Govermnt microcircuit applications (original c

22、quipaent), design applications, and logistics purposes. contractor-prepared specification or drawing. . Microcircuits covered by this drawing will replace the sme gancric device cmrd by a 6.1.1 . Device class O devices will replace device class i4 devices. _. 6.1.2 6.2 -01 of sw) Is. All proposed ch

23、anges to existingSIOs will be coordinated with the users of record for the indivibl docunmts. This coordimtion will be accomplished in Iiccordance with MIL-STD-973 using 00 Forni 1692, Engineering Change Proposal. of w. Military and industrial users should inforni Defense Electronics Swly Center whe

24、n a system application rcquires configuration control and which slots are applicable to that system. DESC will mintain a record of users and this list will be wed for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contac

25、t DESC-EC, telephone (513) 296-6M7. 6.3 6.4 -. Carrnts on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone (513) 296-5377. A STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 . 6.5 n. in MIL-PRF-38535 and MIL-WBK-1331. 5962-96760 REVISIO

26、N LEVEL SHEET 9 The abbreviations, synibois, and definitions used herein are defined 6.6 spyrces of w. 6.6.1 WL-38535. have agreed to this drawing. of gyy;glv for derice chasses a WU . Sources of supply for device classes P and V are listed in The vendors listed in WL-38535 have subniitted a certifi

27、cate of conpliance (see 3.6 herein) to DESC-EC and 6.6.2 - sources of SWY for device clW . HDBK-103. herein) has ken subniitted to and accepted by DESC-EC. Approved sources of supply for ctass M are listed in MlL- The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of co

28、npliance (see 3.6 I SIZE I I ESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-76760 9999996 0085365 196 5962-9676001QPA 27014 o . LF41MJ/883 STANDARD MICROCIRCUIT DRAWING SOORCE APPROVAL BULLETIN DATE: 96-02-01 Approved s

29、ources of supply for SMD 5962-96760 are listed below for idiate acquisition only and shall be added to MIL-HDBK-103 during the next revision. deletion of sources. The vendors listed belou have agreed to this drawing and a certificate of ccnpliance has been subnritted to and accepted by DESC-EC. MIL-

30、HDBK-103 will be revised to inclue the addition or This bulletin is sigersedcd by the next datd revision of MIL-WBK-103. I I I 1 simi lar Standard Vendor I microcip:uitydrawing I 5962-%76001PA I 27014 I LF412”/883 I The lead finish show for each PIN representing a hermetic package is the most readil

31、y available from the manufacturer listed for that part. The device manufacturers listed herein are authorized to supply alternate lead finishes Wi0 Wii, or Wi at their discretion. Contact the listed approved source of supply for further information. W. Do not use this nunber for item acquisition. It

32、ens acquired to this nuher may not satisfy the performance requirements of this drawing. Vendor CAGE - 270 14 Vendor name - National Semiconductor Corporation 2900 Semiconductor Drive P.O. Box 58090 Santa Clara, CA 95052-8090 The information contained herein is disseminated for convenience only and the Govermnt assumes no liability whatsoever for any inaccuracies in the information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-