DLA SMD-5962-97632 REV A-2007 MICROCIRCUIT DIGITAL ADVANCED LOW POWER SCHOTTKY TTL DUAL 4-LINE TO 1-LINE DATA SELECTORS MULTIPLEXERS MONOLITHIC SILICON《微型电路 数字型 改进低功率肖特基晶体管晶体管逻辑电路 .pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 07-02-09 Joseph D. Rodenbeck REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Tuan Nguyen DEFENSE SUPPL

2、Y CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Larry Shaw COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, DUAL 4-LINE TO 1-LINE AND AGENCIES OF THE DEP

3、ARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-08-22 DATA SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97632 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E631-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

4、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space

5、 application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5

6、962 - 97632 01 Q E X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specifie

7、d RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the

8、circuit function as follows: Device type Generic number Circuit function 01 54ALS352 Dual 4-line to 1-line data selectors/multiplexers 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements do

9、cumentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835

10、 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Leadless square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device c

11、lass M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply vo

12、ltage range (VCC) . 7.0 V dc Input voltage (VI) . 7.0 V dc Operating free-air temperature range (TA) -55C to +125C Maximum power dissipation (PD) 55 mW Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 175C 1.4 Recommende

13、d operating conditions. Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) +2.0 V Maximum low level input voltage (VIL) . +0.7 V Maximum high level output current (IOH) -1 mA Maximum low level output current (IOL) . +12mA Case operating temperature range (TC)

14、-55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitatio

15、n or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFE

16、NSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Bu

17、ilding 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific ex

18、emption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

19、,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and

20、 as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for

21、 non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1

22、Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.4 Test circuit and switching waveforms. The test circuit and switching

23、 waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

24、case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the

25、manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for d

26、evice classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The complian

27、ce mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein).

28、 For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall

29、affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V i

30、n MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired t

31、o this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation

32、shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 11 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking pe

33、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC+125C unless otherwise sp

34、ecified Group A subgroups Min Max Unit Input clamp voltage VIKVCC= 4.5 V, II= -18mA 1, 2, 3 -1.5 V VCC= 4.5 V to 5.5 V, IOH= -0.4 mA 1, 2, 3 VCC- 2 High level output voltage VOHVCC= 4.5 V, IOH= -1 mA 1, 2, 3 2.4 V Low level output voltage VOLVCC= 4.5 V, IOL= 12 mA 1, 2, 3 0.4 V Input current IIVCC=

35、5.5 V, VI= 7 V 1, 2, 3 0.1 mA Input current, high IIHVCC= 5.5 V, VI= 2.7 V 1, 2, 3 20 A Input current, low IILVCC= 5.5 V, VI= 0.4 V 1, 2, 3 -0.1 mA Output current IOVCC= 5.5 V, VO= 2.25 V 1, 2, 3 -20 -112 mA Supply current ICCVCC= 5.5 V 1/ 1, 2, 3 10 mA Functional test See 4.4.1b 7, 8 tPLH9, 10, 11

36、5 32 Propagation delay time, from A or B input to Y output tPHL9, 10, 11 5 24 ns tPLH9, 10, 11 3 24 Propagation delay time, from data input to Y output tPHL9, 10, 11 2 15 ns tPLH9, 10, 11 4 26 Propagation delay time, from G input to Y output tPHLVCC= 4.5 V to 5.5 V, CL= 50 pF, RL= 500 9, 10, 11 4 24

37、 ns 1/ ICCis measured with data and select inputs at 4.5 V and G inputs grounded. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

38、A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines E 2 Terminal number Terminal symbol 1 1 G NC 2 B 1 G 3 1C3 B 4 1C2 1C3 5 1C1 1C2 6 1C0 NC 7 1Y 1C1 8 GND 1C0 9 2Y 1Y 10 2C0 GND 11 2C1 NC 12 2C2 2Y 13 2C3 2C0 14 A 2C1 15 2 G 2C2 16 VCCNC 17 2C3 18 A 19 2 G 20 VCCNC = No connection FIGURE

39、1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 INPUTS SELECT 1/ DATA B A

40、 CO C1 C2 C3 STROBE G OUTPUT Y X X X X X X H H L L L X X X L H L L H X X X L L L H X L X X L H L H X H X X L L H L X X L X L H H L X X H X L L H H X X X L L H H H X X X H L L 1/ Select inputs A and B are common to both sections (see figure 3). FIGURE 2. Truth table. FIGURE 3. Logic diagram. Provided

41、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CLincludes probe and jig capacitance. 2. All inp

42、ut pulses have the following characteristics: PRR 1 Mhz, tr= tf= 2 ns, duty cycle = 50%. 3. The outputs are measured one at a time with one transition per measurement. FIGURE 4. Test circuit and switching waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

43、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance wit

44、h MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2

45、Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted

46、 on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to

47、 the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified i

48、n table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon req