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本文(DLA SMD-5962-97633 REV C-2012 MICROCIRCUIT LINEAR DUAL LOW POWER JFET INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf)为本站会员(terrorscript155)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-97633 REV C-2012 MICROCIRCUIT LINEAR DUAL LOW POWER JFET INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to gain bandwidth test conditions as specified in table I. - ro 01-07-11 R. MONNIN B Drawing updated to reflect current requirements. - ro 06-01-23 R. MONNIN C Add ESD limit under paragraph 1.3. Update boilerplate requirements to cur

2、rent MIL-PRF-38535 requirements. - ro 12-02-07 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS

3、DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, DUAL, LOW POWER, JFET INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 97-08-27 AMSC N/A REVISION LEVEL C SIZE A

4、CAGE CODE 67268 5962-97633 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E135-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC

5、FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number

6、 (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97633 01 Q G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (

7、see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A speci

8、fied RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LF442 Dual, low power, JFET input operational amplifier 1.2.3 D

9、evice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with

10、MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can 1.2.5 Lead finish. The lead finish is as speci

11、fied in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION

12、 LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 18 V Differential input voltage (VID) 30 V Input voltage range (VIN) . 15 V 2/ Output short circuit current . Continuous 3/ Power dissipation (PD) . 900 mW 4/ Junction temperature (TJ) 150C Storage temperatur

13、e range -65C to +150C Lead temperature (soldering, 10 seconds) . +260C Electrostatic discharge (ESD) 500 V Thermal resistance, junction-to-case (JC) . 33C/W Thermal resistance, junction-to-ambient (JA) 87C/W (measured in 500 linear feet/minute air flow) 161C/W (measured in still air) 1.4 Recommended

14、 operating conditions. Supply voltage (VS) 15 V Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unl

15、ess otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits.

16、 MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or f

17、rom the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, howev

18、er, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specifi

19、ed, the absolute maximum negative input voltage is equal to the negative power supply voltage. 3/ Any of the amplifier outputs can be sorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. 4/ Although the devic

20、e package is capable of dissipating approximately 900 mW of power, the die, per the electrical characteristics, can dissipate a maximum of approximately 50 mW. It must not be assumed, that the die can be stressed beyond the conditions in the electrical characteristics, to take advantage of the packa

21、ge power handling capabilities. Although the device may not be damaged, it may not perform per the guaranteed electrical characteristics. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MAR

22、ITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Manageme

23、nt (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction

24、, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 T

25、erminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in tab

26、le I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN l

27、isted in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designato

28、r shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as r

29、equired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requiremen

30、ts of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing

31、as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate

32、of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Mariti

33、me -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the

34、 option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit gro

35、up number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Elec

36、trical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current ICC1,2,3 01 500 A Input offset voltage VOSRS= 10 k 1 01 -5.0 5.0 mV 2,3 -7.5 7.5 Input bias current IIB1 01 0.1 nA 2 20 Input offset

37、 current IOS1 01 -0.05 0.05 nA 2 -10 10 Common mode rejection ratio CMRR VCM= 11 V, RS= 10 k 1,2,3 01 70 dB Power supply rejection ratio PSRR +VS= +15 V to +6 V, -VS= -15 V 1,2,3 01 70 dB -VS= -15 V to -6 V, +VS= +15 V 70 Large signal voltage gain +AVSVOUT= 0 V to +10 V, 2/ 4 01 25 V/mV RL= 10 k 5,6

38、 15 -AVSVOUT= 0 V to -10 V, 2/ 4 25 RL= 10 k 5,6 15 Output voltage swing VOUTVIN= 11 V, RL= 10 k 4,5,6 01 -12 +12 V Input common mode voltage range VCM3/ 4,5,6 01 11 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

39、NDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Li

40、mits Unit Min Max Slew rate +SR AV= 1 ,TA= +25C, RL= 2 k, CL= 100 pF, VOUT= -5 V to +5 V 7 01 0.6 V/s -SR AV= 1 ,TA= +25C, RL= 2 k, CL= 100 pF, VOUT= +5 V to -5 V 7 0.6 Gain bandwidth product GBW VIN= 50 mV, TA= +25C, f = 20 kHz 7 01 0.6 MHz 1/ Unless otherwise specified, VS= 15 V, VCM= 0 V, and RS=

41、 0 . 2/ V/mV in units column is equivalent to K in datalog. 3/ Parameter tested go-no-go only, guaranteed by CMRR test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OH

42、IO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline G Terminal number Terminal symbol 1 OUTPUT A 2 INVERTING INPUT A 3 NON-INVERTING INPUT A 4 -VS5 NON-INVERTING INPUT B 6 INVERTING INPUT B 7 OUTPUT B 8 +VSFIGURE 1. Terminal connections. Provided by IHSNot for Re

43、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97633 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling an

44、d inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be

45、in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with

46、method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under docum

47、ent revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum.

48、 b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available

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