DLA SMD-5962-98550 REV D-2009 MICROCIRCUIT LINEAR PLL FREQUENCY SYNTHESIZER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Modify table I test parameters for device type 01. -lgt 99-05-05 Ray Monnin B Add device type 03. Modify table I test parameters for device type 01. -lgt 99-12-16 Ray Monnin C Drawing updated to reflect current requirements. D

2、eleted figure 1. rrp 03-11-18 Ray Monnin D Update boilerplate paragraphs. - ro 09-07-08 C. Saffle REV SHET REV D D D SHEET 15 16 17 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

3、, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, PLL FREQUENCY SYNTHESIZER, MONOLITHIC SILICON DRAWING APPR

4、OVAL DATE 99-01-25 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-98550 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E386-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLU

5、MBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are

6、available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 98550 01 Q X X Federal stock class designator RHA designator (see 1.2.1) D

7、evice type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M R

8、HA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LMX23

9、15 1.2 GHz, PLL frequency synthesizer 02 LMX2325 2.5 GHz, PLL frequency synthesizer 03 LMX2305 500 MHz, PLL frequency synthesizer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documen

10、tation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and

11、as follows: Outline letter Descriptive designator Terminals Package style X GDFP1-G20 20 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo repro

12、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Power supply voltage: VCC. -0.3 V to +6.5 V VP. -0.3 V

13、 to +6.5 V Voltage on any pin with GND = 0 V (VIN) Device types 01 and 02 . -0.3 V to +6.5 V Device type 03 -0.3 V to +0.3 V Power dissipation (PD) 2/ 1 W Storage temperature range -65C to +150C Lead temperature (soldering, 4 seconds) . +260C Junction temperature (TJ) 2/ . +150C Thermal resistance,

14、junction-to-case (JC) . 19C/W Thermal resistance, junction-to-ambient (JA) 2/ 120C/W, still air at 0.5 W 86C/W, 500 linear feet per minute air flow at 0.5 W 1.4 Recommended operating conditions. Power supply voltage: VCC. 2.7 V to 5.5 V VP. VCCto +5.5 V Ambient operating temperature range (TA): Devi

15、ce type 01 -55C to +105C Device type 02 -55C to +90C Device type 03 -40C to +105C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specifi

16、ed, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Inter

17、face Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardizatio

18、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The maximum power dissipation mu

19、st be derated at elevated temperatures and is dictated by TJ, JA, and TA. The maximum allowable power dissipation at any temperature is PD= (TJ- TA)/JAor the number given in 1.3 herein, whichever is lower. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

20、,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing t

21、akes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified

22、herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class

23、 level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline.

24、The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteri

25、stics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are define

26、d in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ o

27、n the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certific

28、ation mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a

29、QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of

30、compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herei

31、n. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For de

32、vice class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the op

33、tion to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group

34、number 119 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE

35、I. Electrical performance characteristics for device type 01. Test Symbol Conditions 1/ -55C TA +105C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Power supply current ICC1, 3 01 8.5 mA 2 9.5 Power down current ICC-PWDNVCC= 2.7 V 1, 2, 3 01 180 A 350High level input v

36、oltage VIHVCC= VP= 2.7 V 2/ 4/ 1, 2, 3 01 0.7 VCCV Low level input voltage VILVCC= VP= 2.7 V 2/ 4/ 1, 2, 3 01 0.3 VCCV High level input current (clock data) IIHVIH= VCC= 5.5 V 1, 2, 3 01 -1.0 1.0 A Low level input current (clock data) IILVIL= 0 V 1, 2, 3 01 -1.0 1.0 A Oscillator input current OSCIHV

37、IH= VCC= 5.5 V 1, 2, 3 01 100 A OSCILVIL= 0 V 1, 2, 3 01 -100 A High level input current (LE, FC, PWDN) IIHVIH= VCC= 5.5 V 1, 2, 3 01 -1.0 1.0 A Low level input current (LE, FC, PWDN) IILVIL= 0 V 1, 2, 3 01 -100 1.0 A Charge pump tri-state current IDO-TRI0.5 V VDO 3.1 V, 1, 3 01 -2.5 2.5 nA VCC= VP=

38、 3.6 V 2 -25 25 Charge pump output current IDO-SOURCEVCC= VP= 2.7 V, VDO= 1.35 V 1, 2, 3 01 -3.2 mA VCC= VP= 5.0 V, VDO= 2.5 V -8.0 Charge pump output current IDO-SINKVCC= VP= 2.7 V, VDO= 1.35 V 1, 2, 3 01 3.2 mA VCC= VP= 5.0 V, VDO= 2.5 V 8.0 Charge pump output current magnitude versus voltage IDOv

39、s VDO0.5 V VDO 4.5 V, VCC= VP= 5.0 V 1, 2, 3 01 15 % See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVE

40、L D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics for device type 01 - Continued. Test Symbol Conditions 1/ -55C TA +105C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Charge pump output current sink versus source mismatch IDO-SINKvs IDO

41、-SOURCEVDO= 2.5 V, VCC= VP= 5.0 V 1, 2, 3 01 10 % High level output voltage VOHIOH= -1.0 mA 3/ 1, 2, 3 01 VCC- 0.8 V VOH(OSCOUT)IOH= -200 A, VCC= VP= 3.0 V VCC- 0.8 Low level output voltage VOLIOL= 1.0 mA 3/ 1, 2, 3 01 0.4 V VOL(OSCOUT)IOL= 200 A, VCC= VP= 3.0 V 0.4 Low level open drain output curre

42、nt (PHP) IOLVOL= 0.4 V 4/ 1, 2, 3 01 1.0 mA High level open drain output current IOHVOH= 5.5 V 1, 2, 3 01 100 A Data to clock setup time tCSVCC= VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 50 ns Data to clock hold time tCHVCC= VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 10 ns Clock pulse width high tCWHVCC=

43、 VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 50 ns Clock pulse width low tCWLVCC= VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 50 ns Clock to enable setup time tESVCC= VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 50 ns Enable pulse width tEWVCC= VP= 2.7 V, 4/ see figure 2 9, 10, 11 01 50 ns Maximum operating freq

44、uency fINVCC= VP= 2.7 V, 4/ Divide Ratio 193, fOUT(Diff) = 322 Hz 9, 10, 11 01 1.2 GHz VCC= VP= 2.7 V, 4/ Divide Ratio 385, fOUT(Diff) = 243 Hz Input sensitivity PfINVCC= VP= 2.7 V 4/ 9, 10, 11 01 -15 +5 dBm VCC= 5.5 V 4/ 9, 10 -9 6 11 -7 6 See footnotes at end of table. Provided by IHSNot for Resal

45、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98550 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics for device type 02. Test Symbo

46、l Conditions 1/ -55C TA +90C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Power supply current ICCVCC= 5.5 V 1, 2, 3 02 15 mA Power down current ICC-PWDNVCC= 2.7 V 1, 2, 3 02 180 A VCC= 5.5 V 350 High level input voltage VIHVCC= VP= 2.7 V 2/ 4/ 1, 2, 3 02 0.7 VCCV Low

47、 level input voltage VILVCC= VP= 2.7 V 2/ 4/ 1, 2, 3 02 0.3 VCCV High level input current (clock data) IIHVIH= VCC= 5.5 V 1, 2, 3 02 -1.0 1.0 A Low level input current (clock data) IILVIL= 0 V, VCC= 5.5 V 1, 2, 3 02 -1.0 1.0 A Oscillator input current OSCIHVIH= VCC= 5.5 V 1, 2, 3 02 100 A OSCILVIL=

48、0 V, VCC= 5.5 V -100 High level input current (LE, FC, PWDN) IIHVIH= VCC= 5.5 V 1, 2, 3 02 -1.0 1.0 A Low level input current (LE, FC, PWDN) IILVIL= 0 V, VCC= 5.5 V 1, 2, 3 02 -100 1.0 A Charge pump tri-state current IDO-TRI0.5 V VDO 3.1 V, 1, 3 02 -2.5 2.5 nA VCC= VP= 3.6 V 2 -20 20 Charge pump output current IDO-SOURCEVCC= VP= 2.7 V, 1, 3 02 -3.0 mA VDO= 1.35 V 2 -3.2 VCC= VP= 5.0 V, 1, 3 -8.0 VDO= 2.5 V 2 -8.2 Charge pump output current IDO-SINKVCC= VP= 2.7 V, 1, 3 02 3.0 mA VDO= 1