DLA SMD-5962-98603 REV B-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS HEX INVERTER MONOLITHIC SILICON《微型电路 数字型 辐射加固改进的CMOS 六路反向器 单块硅》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R052-99. LTG 99-04-21 Monica L. Poelking B Incorporate revision A into document. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG 05-10-12 Thomas M. Hess REV SHET REV B B B

2、B B B SHEET 15 16 17 18 19 20 REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle, Jr COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil TH

3、IS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 98-11-11 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, HEX INVERTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-

4、98603 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E523-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR

5、97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When a

6、vailable, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 98603 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead

7、finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels

8、and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACS04 Radiation hardened, SOS, advanced CMOS, hex inverter 1.2.3 Device class d

9、esignator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535

10、, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The

11、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS CO

12、LUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any

13、one input (IIN). 10 mA DC output current, any one output (IOUT) 50 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline C 24C/W Case outline X . 29C/W Thermal resistance, junction-to-ambient (JA):

14、Case outline C 73C/W Case outline X . 114C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +

15、0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise or fall time at VCC= 4.5 V (tr, tf) 10 ns/V 1.5 Radiation features: Ma

16、ximum total dose available (dose rate = 50 300 rads(Si)/s) 3 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) Not tested Latch-up None 5/ Dose rate survivability Not tested 1/ Stresses abov

17、e the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full

18、specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C 13.5 mW/C Case outline X 8.6 mW/C 5/ Guarantee

19、d by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICAB

20、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

21、 OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-10

22、3 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadel

23、phia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been ob

24、tained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the f

25、orm, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this do

26、cument. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in

27、 accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test ci

28、rcuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

29、CIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and

30、 postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table

31、I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devic

32、e. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark

33、for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 l

34、isted manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance

35、submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Cert

36、ificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class

37、M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to rev

38、iew the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (

39、see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical

40、 performance characteristics. Test Symbol Conditions 1/ -55C TC+125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max High level output voltage VOHFor all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 4.5

41、 V 1, 2, 3 4.40 V M, D, P, L, R, F 3/ All 1 4.40 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 5.5 V 1, 2, 3 5.40 M, D, P, L, R, F 3/ All 1 5.40 Low level output voltage VOLFor all inputs affecting output under test VIN= 3.15 V or

42、 1.35 V For all other inputs VIN= VCCor GND IOL= 50 A All 4.5 V 1, 2, 3 0.1 V M, D, P, L, R, F 3/ All 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOL= 50 A All 5.5 V 1, 2, 3 0.1 M, D, P, L, R, F 3/ All 1 0.1 Input current, high IIHAll 5.

43、5 V 1 +0.5 A For input under test VIN= 5.5 V For all other inputs VIN= VCCor GND 2, 3 +3.0 M, D, P, L, R, F 3/ All 1 +3.0 Input current, low IILAll 5.5 V 1 -0.5 A For input under test VIN= GND For all other inputs VIN= VCCor GND 2, 3 -3.0 M, D, P, L, R, F 3/ All 1 -3.0 See footnotes at end of table.

44、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics C

45、ontinued. Test Symbol Conditions 1/ -55C TC+125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max Output current, high (Source) IOH4/ For all inputs affecting output under test, VIN= 4.5 V or 0.0 V All 4.5 V 1 -12.0 mA For all other inputs VIN= VCCor GND 2, 3 -8.0 V

46、OUT= 4.1 V M, D, P, L, R, F 3/ All 1 -8.0 Output current, low (Sink) IOL4/ For all inputs affecting output under test, VIN= 4.5 V or 0.0 V All 4.5 V 1 12.0 mA For all other inputs VIN= VCCor GND 2, 3 8.0 VOUT= 0.4 V M, D, P, L, R, F 3/ All 1 8.0 Quiescent supply ICCVIN= VCCor GND All 5.5 V 1 5.0 A c

47、urrent 2, 3 200.0 M, D, P, L, R, F 3/ All 1 200.0 Input capacitance CINVIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 4 10.0 pF Power dissipation CPDAll 5.0 V 4 11.0 pF capacitance 5/ 5, 6 12.0 Functional test 6/ VIH= 3.15 V, VIL= 1.35 V All 4.5 V 7, 8 L H See 4.4.1b M, D, P, L, R, F 3/ All

48、7 L H Propagation delay time, An to Yn tPLH, tPHLCL= 50 pF RL= 500 All 4.5 V 9 2.0 10.0 ns 7/ See figure 4 10, 11 2.0 10.0 M, D, P, L, R, F 3/ All 9 2.0 10.0 Output transition time tTLH, tTHLCL= 50 pF RL= 500 All 4.5 V 9, 10, 11 1.0 9.0 ns 7/ See figure 4 M, D, P, L, R, F 3/ All 9 1.0 9.0 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I herein. Output terminals not designated shall be high level logic, low level logic, or open, except for the ICCtest, the output termin