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本文(DLA SMD-5962-99502 REV A-2009 MICROCIRCUIT LINEAR MICROPOWER PRECISION OPERATIONAL AMPLIFER MONOLITHIC SILICON.pdf)为本站会员(wealthynice100)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-99502 REV A-2009 MICROCIRCUIT LINEAR MICROPOWER PRECISION OPERATIONAL AMPLIFER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 09-11-09 C. SAFFLE REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBU

2、S COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, MICROPOWER, PRECISION OPERATIONAL AMPLIFER, MONO

3、LITHIC SILICON DRAWING APPROVAL DATE 98-11-05 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-99502 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E029-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502

4、 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outl

5、ines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 99502 01 Q G A Federal stock class designator R

6、HA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA d

7、esignator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic numbe

8、r Circuit function 01 LT1077 Micropower, single supply, precision operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the

9、requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive des

10、ignator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted

11、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 22 V Differential input voltage . 30 V Input voltage (VIN) Equal

12、 to positive supply voltage 5 V below negative supply voltage Power dissipation (PD) (VS) ISOutput short circuit duration Indefinite Junction temperature (TJ) . +150C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal regulation, junction-to-case (JC) Se

13、e MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case G . 150C/W Case P 100C/W 1.4 Recommended operating conditions. Supply voltage (VS) . +5 V, 15 V Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. T

14、he following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufac

15、turing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Mi

16、crocircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this

17、drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. E

18、xtended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

19、LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the

20、QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design,

21、 construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal co

22、nnections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full a

23、mbient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, th

24、e manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device

25、 classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance ma

26、rk for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For

27、device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affir

28、m that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL

29、-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to thi

30、s drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall

31、 be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitt

32、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified

33、Group A subgroups Device type Limits Unit Min Max Input offset voltage VOSVS= 5 V 1 01 60 V 2,3 260 VS= 15 V 1 200 2,3 450 Input offset voltage drift VOS/ VS= 5 V 2/ 2,3 01 2.0 V/C T VS= 15 V 2/ 2.5 Input offset current IOSVS= 5 V and VS= 15 V 1 01 0.45 nA 2,3 0.80 Input bias current IIBVS= 5 V and

34、VS= 15 V 1 01 11 nA 2,3 13 Input voltage range VINVS= 5 V 1 01 3.5 to 0 V VS= 15 V 13.5 to -15.0 Maximum output voltage swing VOMOutput low, no load, 1 01 6 mV VS= 5 V 2,3 8 Output low, 2 k to GND, VS= 5 V 1 1.1 Output low, VS= 5 V, 1 130 ISINK= 100 A 2,3 170 Output high, no load, 1 4.2 V VS= 5 V 2,

35、3 3.9 Output high, 2k to GND, 1 3.5 VS= 5 V 2,3 3.0 VS= 15 V, RL= 50 k 1 13 VS= 15 V, RL= 2 k 11 VS= 15 V, RL= 5 k 2,3 11 Supply current ISVS= 5 V 1 01 68 A 2,3 90 VS= 15 V 1 85 2,3 105 Offset adjustment range VOSRRPOT= 10 k, VS= 5 V, wiper to +VS1 01 500 V See footnotes at end of table. Provided by

36、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued.

37、Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Minimum supply voltage VSVS= 5 V 3/ 1 01 2.3 V Input resistance, differential mode RINVS= 5 V 2/ 4 01 270 M Common mode rejection ratio CMRR VCM= 0 V to 3.5 V, 4 01 94 dB VS= 5 V VCM=

38、 0.05 V to 3.2 V, 5,6 88 VS= 5 V VCM= +13.5, -15 V, 4 97 VS= 15 V VCM= +13, -14.9 V, 5,6 90 VS= 15 V Power supply rejection ratio PSRR VS= 5 V, 2.3 V to 12 V 4 01 100 dB VS= 5 V, 3.1 V to 12 V 5,6 94 VS= 5 V, 0 V to 18 V 4 103 5,6 97 Large signal voltage gain AVOLVS= 5 V, no load, 4 01 240 V/mV VOUT

39、= 0.03 V to 4 V VS= 5 V, RL= 50 k, 200 VOUT= 0.03 V to 3.5 V VS= 5 V, RL= 50 k, 5,6 100 VOUT= 0.05 V to 3.5 V VS= 15 V, RL= 50 k, 4 800 VOUT= 10 V VS= 15 V, RL= 2 k, 300 VOUT= 10 V VS= 15 V, RL= 5 k, 5,6 250 VOUT= 10 V Slew rate SR VS= 5 V 4/ 4 01 0.05 V/s VS= 15 V 4/ 0.07 1/ Unless otherwise specif

40、ied, common mode voltage (VCM) = 0.1 V, and output voltage (VOUT) = 1.4 V. 2/ If not tested, shall be guaranteed to the limits specified in table I herein. 3/ Power supply rejection ratio is measured at the minimum supply voltage. The operational amplifiers actually work at 1.8 V supply but with an

41、average offset skew of -300 V. 4/ Slew rate at 5 V, 0 V is guaranteed by inference from slew rate measurement at 15 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLU

42、MBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines G and P Terminal number Terminal symbol 1 VOSTRIM 2 -INPUT 3 +INPUT 4 -VS5 NC 6 OUTPUT 7 +VS8 VOSTRIM FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted

43、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99502 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be i

44、n accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535,

45、appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and sh

46、all be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made a

47、vailable to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test paramete

48、rs shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made availab

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