DLA SMD-5962-99504 REV K-2011 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to TR(tr), TR(os), SR+, SR-, NI(BB), NI(PC), CS tests as specified in table I , 1.5, 4.4.1b, and table II. - ro 99-10-20 R. MONNIN B Add test conditions to the input offset voltage temperature sensitivity test and the input offset cu

2、rrent temperature sensitivity test in table I. Make changes to the title in table IIB. Editorial changes throughout. - rrp 99-11-17 R. MONNIN C Add radiation hardened level “L” devices and delete figures 1 and 3. - ro 02-06-13 R. MONNIN D Make change to input offset voltage post irradiation limits a

3、s specified under table I. - ro 03-10-15 R. MONNIN E Add device type 02 tested at low dose rate. Make changes to 1.2.2, 1.5, Table I, Table IIB, Figure I, and 4.4.4.1. - ro 06-06-09 R. MONNIN F Delete the 50 krads reference for device type 01 under paragraph 1.5. Change the dose rate from “12 mrads(

4、Si) / s” to “10 mrads (Si) / s” for device type 02 under paragraph 1.5. Also under paragraph 1.5, third line of the paragraph, after method 1019, add the words, “condition D”. Make changes to footnote 1/ as specified under Table I. - ro 08-03-11 R. HEBER G Add paragraph 3.1.1 and appendix A. -rrp 08

5、-11-03 R. HEBER H Under Table I conditions column, VIO, IIO, +IIB, -IIB, VIO/ T, IIO/ T, and +PSRR tests, make polarity changes to VCMlimits. Under Table IIB, footnote 1/, delete “VCM= -15 V” and substitute “VCM= +15 V”. Delete paragraphs 4.4.4.1.1 and 4.4.4.2. - ro 10-10-18 C. SAFFLE J Add device t

6、ype 03. - drw 11-01-04 C SAFFLE K Sheet 13, table IIA, add subgroups 4, 5, 6, 7, 8A and 8B for group C and D end-point electrical parameters for device type 03. - drw 11-03-25 C SAFFLEREV SHET REV K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS

7、 SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, L

8、INEAR, RADIATION HARDENED, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 98-11-06 AMSC N/A REVISION LEVEL K SIZE A CAGE CODE 67268 5962-99504 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E288-11 Provided by IHSNot for ResaleNo reproduction

9、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99504 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliab

10、ility (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN

11、is as shown in the following example: 5962 R 99504 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked d

12、evices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device typ

13、es. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 LM124A Quad, operational amplifier 02 LM124A Quad, operational amplifier 03 LM124A Quad, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter i

14、dentifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-

15、PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack Z GDFP1-G14 14 Flat pack with gull wing leads 1.2.5 Lead finish.

16、 The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99504 DLA LAND AND MARITIME COLUMB

17、US, OHIO 43218-3990 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (+VCC) 32 V dc or 16 V dc Input voltage range -0.3 V dc to +32 V dc Differential input voltage 32 V dc Input current (VIN -0.3 V dc) . 50 mA 2/ Power dissipation: 3/ Case C . 1260

18、 mW Cases D and Z . 700 mW Storage temperature range . -65C to +150C Output short-circuit to GND: 4/ (One amplifier, +VCC 15 V dc and TA= 25C) Continuous Lead temperature (soldering, 10 seconds) 260C Maximum junction temperature (TJ) 150C Thermal resistance, junction-to-case (JC): Case C . 19C/W Cas

19、es D and Z . 18C/W Thermal resistance, junction-to-ambient (JA): Case C . 103C/W (still air) 51C/W (500 LF/min air flow) Cases D and Z . 176C/W (still air) 116C/W (500 LF/min air flow) 1.4 Recommended operating conditions. Supply voltage range . 5 V to 15 V Ambient operating temperature range (TA) .

20、 -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ This input current will only exist when the voltage at any of the input leads is driven negative. It is

21、 due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the opera

22、tional amplifiers to go to the +VCCvoltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than 0.3 V dc

23、at 25C. 3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ, JA, and TA. The maximum allowable power dissipation at any temperature is PD= (TJ TA) / JAor the number given in 1.3 herein, whichever is lower. 4/ Short circuits from the output to +VCCcan cause

24、 excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of +VCC. At values of supply voltage in excess of +15 V dc, continuous short-circuits can exceed the power dissipation ratings and ca

25、use eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99504 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

26、EVISION LEVEL K SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads(Si) / s) RHA designator R 100 krads (Si) 5/ Device type 02: Maximum total dose available (dose rate = 10 mrads(Si) / s) RHA designator R 100 krads (Si) 6/ The m

27、anufacturer supplying RHA parts on this drawing has completed Lot Acceptance testing at Low Dose Rate (10 mrad/s) on these RHA marked parts. The Low Does Rate (LDR) testing that was performed demonstrates that these parts from the lot tested do not have an Enhanced Low Dose rate Sensitivity as defin

28、ed by Method 1019, condition D. Lot Acceptance Testing at LDR will continue to be performed on each wafer or wafer lot until characterization testing has been performed in accordance with Method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previous

29、ly tested device was ELDRS, the part number will be changed to an 02 device to distinguish the two parts. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.

30、Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircui

31、ts. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ o

32、r from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, ho

33、wever, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 5/ For device type 01, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guarante

34、ed only for the conditions specified in MIL-STD-883, test method 1019, condition A. 6/ For device type 02, these parts have been tested and do not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, te

35、st method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99504 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requi

36、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

37、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and p

38、hysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Termin

39、al connections. The terminal connections shall be as specified on figure 1. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request.

40、 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Elec

41、trical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For

42、 packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accorda

43、nce with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“

44、 as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of com

45、pliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufact

46、urers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for d

47、evice class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this

48、 drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentat

49、ion. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permi