DLA SMD-5962-99536 REV H-2012 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED HIGH FREQUENCY HALF BRIDGE DRIVER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to VTHUV test specified under table I. - ro 00-03-07 R. MONNIN B Add device type 02. - ro 01-07-26 R. MONNIN C Make changes to ILKand +IINtests as specified in table I. - ro 01-12-14 R. MONNIN D Make change to the high side floating s

2、upply offset voltage limit for device type 02 as specified under 1.4. - ro 02-04-17 R. MONNIN E Add a new logic diagram for device type 02. - ro 03-04-15 R. MONNIN F Make correction to the title block. Make clarification to footnote 7/ under paragraph 1.5. Add pin description to figure 1. Make chang

3、es to correct figure 3, irradiation circuit. - ro 11-01-19 C. SAFFLE G Make correction to figure 3, irradiation circuit. - ro 11-04-05 C. SAFFLE H Add device type 03, Table IB, paragraphs 4.4.4.3 and 6.7. Delete irradiation circuits. - ro 12-08-02 C. SAFFLE REV SHEET REV H H H H H H H H H H H SHEET

4、15 16 17 18 19 20 21 22 23 24 25 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR

5、 USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, HIGH FREQUENCY HALF BRIDGE DRIVER, MONOLITHIC SILICON DRAWING APPROVAL DATE 99-06-29 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67

6、268 5962-99536 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E315-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99536 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 AP

7、R 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are av

8、ailable and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these p

9、arts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99536 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2

10、.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the ap

11、propriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-2100RH 120 V, radiation hardened, dielectric isolated high frequency half bridge driver 02 IS-2100ARH

12、150 V, radiation hardened, dielectric isolated high frequency half bridge driver 03 IS-2100AEH 150 V, radiation hardened, dielectric isolated high frequency half bridge driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as fol

13、lows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to

14、MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1.2.5 Lead fin

15、ish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99536 DLA LAND AND MARITIME

16、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ High side floating supply voltage (VB): Device type 01 -0.3 V to 120 V Device types 02 and 03 -0.3 V to 150 V High side floating supply offset voltage (VS) VB 25 V to VB+ 0.3 V High side flo

17、ating output voltage (VHO) VS 0.3 V to VB+ 0.3 V Low side fixed supply voltage (VCC) -0.3 V to 25 V Low side output voltage (VLO) . COM 0.3 V to VCC+ 0.3 V Logic supply voltage (VDD) VCC3/ Logic input voltage (HIN, LIN, and SD pins) . VSS 0.3 V to VDD+0.3 V VSslew rate (dVS/ dt): Device type 01 10 V

18、 / ns maximum Device types 02 and 03 15 V / ns maximum COM (low driver return) offset to VSS: Device type 01 -7 V to +7 V Device types 02 and 03 -5 V to +5 V Maximum power dissipation (PD) (TA +25C) . 1.6 W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) +175C Storage temp

19、erature range -55C to +150C Thermal resistance, junction-to-case (JC) 18C/W Thermal resistance, junction-to-ambient (JA) . 90C/W 1.4 Recommended operating conditions. High side floating supply absolute voltage (VB) . VS+ 12 V to VS+20 V High side floating supply offset voltage (VS): Device type 01 -

20、4 V to 100 V 4/ Device types 02 and 03 -4 V to 130 V 4/ High side floating output voltage (VHO) VSto VBLow side fixed supply (VCC) . 12 V to 20 V Low side output voltage (VLO) . COM to VCCLogic supply voltage (VDD) VCC3/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to t

21、he device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All voltage parameters are absolute voltages referenced to VSS. 3/ Logic is operational for VSof -4 V but VBmust remain minimum 12 V above VSS(ground). 4/ This device is recommended for VDD= VCCand

22、 they should be tied together at the board level. VDDand VCCcan have different values but both must remain within 12 V 20 V range. Low side undervoltage monitors VDDto VSSdifferential. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR

23、CUIT DRAWING SIZE A 5962-99536 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions continued. Logic supply return (VSS) . 0 V COM (low driver return) offset to VSS-5 V to 5 V 5/ Logic input voltage (VIN) VSSto VDD6/ Ambi

24、ent operating temperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device types 01 and 02 classes M, Q, or V 300 krads(Si) 7/ Device type 01 class T 100 krads(Si) 7/ Device type 03 . 300 krads(Si) 8/ Maximum total dose available

25、 (dose rate 0.01 rads(Si)/s): Device type 03 . 50 krads(Si) 8/ Single event phenomenon (SEP) for device types 02 and 03: Destructive single event effects (SEE): No SEL observed at effective linear energy transfer (LET) (see 4.4.4.3) . 90 MeV/(mg/cm2) 9/ No SEB observed at effective (LET) (fluence =

26、1.0 x 107ions/cm2) . 90 MeV/(mg/cm2) 9/ Nondestructive single event effects (SEE): No SET observed at effective LET (fluence 4x106and pulse perturbation = 1) . 90 MeV/(mg/cm2) 9/ _ 5/ VCC/ VDDto COM must remain in 12 V to 20 V range. 6/ The input buffers are designed to accept 5 V logic level inputs

27、 while running VDDin 12 V 20 V range. 7/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 101

28、9, condition A to a maximum total dose of 300 krads(Si) for device classes V, Q, or M and 100 krads(Si) for device class T. 8/ Devcice type 03 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum

29、 total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 9/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP/SEE characteristics but are not production tested unless specified by the customer through the

30、purchase order or contract. For more information on destructive SEE (SEB/SEGR) test results customers are requested to contact manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99536 DLA LAND AND

31、MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specifi

32、ed, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Inter

33、face Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Do

34、cument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in t

35、he solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr

36、 Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

37、ions unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modifi

38、cation in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of

39、microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Ca

40、se outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit sh

41、all be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99

42、536 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are a

43、s specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be

44、marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this opti

45、on, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V s

46、hall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in ord

47、er to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and

48、 Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class