DLA SMD-5962-99558 REV H-2012 MICROCIRCUIT LINEAR RADIATION HARDENED HIGH SPEED DUAL OUTPUT PULSE WIDTH MODULATION MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to table IIB. - ro 00-02-15 R. MONNIN B Add case outlines E and 2. Make changes to VREF, ISC, dFO/DV, VCLKH, IOS, CMRR, VTH, and VSATL1tests as specified in table I. - ro 01-02-15 R. MONNIN C Make change to the ambient operating tempe

2、rature range. - ro 01-03-12 R. MONNIN D Add new footnote to the soft start section as specified in table I and figure 1. - ro 01-04-25 R. MONNIN E Make changes to VREF, VOM, IOS, and IDCHGtests as specified in table I. Make change to IIBdelta limit as specified in table IIB. ro. 02-10-10 R. MONNIN F

3、 Add footnotes under 1.3, 1.4, and 1.5. Add two footnotes under Table I. Make changes to the conditions column for VLINE, VOM, dFO/DV, FOM, PSRR, and ISUtests as specified under Table I. Make corrections to figure 2 and figure 3. - ro 06-04-07 R. MONNIN G Make corrections to the logic diagram under

4、figure 2. - ro 08-12-09 R. HEBER H Add device type 02. Delete irradiation connections figure and device class M references. - ro 12-10-15 C. SAFFLE REV SHEET REV H H H H SHEET 15 16 17 18 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY

5、 RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RAD

6、IATION HARDENED, HIGH SPEED, DUAL OUTPUT PULSE WIDTH MODULATION, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-01-24 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-99558 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E490-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without

7、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space

8、application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflecte

9、d in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99558 01 V X C Federal stock

10、 class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked w

11、ith the appropriate RHA designator. A dash (-) indicates a non-RHA device. Device type Generic number Circuit function 01 HS-1825ARH Radiation hardened DI dual output pulse width modulator 02 HS-1825AEH Radiation hardened DI dual output pulse width modulator 1.2.3 Device class designator. The device

12、 class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers a

13、pproved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead fini

14、sh. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET

15、 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage (VCC and VC) 4/ 36 V dc Power dissipation (PD) . 1.6 W Junction temperature (TJ) +175C maximum Lead temperature (soldering, 10 seconds) . +260C maximum Storage temperature range -65C to +150C Thermal resistance, junction-

16、to-case (JC): Cases E and 2 18C/W Case X 8C/W Thermal resistance, junction-to-ambient (JA): Cases E and 2 70C/W Case X 90C/W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage (VCC and VC) 4/ 12 V to 30 V Ambient operating temperature range (TA) -50C to +125C 1.5 Radiation features: Maximum

17、total dose available (dose rate = 50 300 rad(Si)/s): Device type 01: Device classes V or Q . 300 krads(Si) 5/ Device class T . 100 krads(Si) 5/ Device type 02 300 krads(Si) 6/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 50 krads(Si) 6/ Single event phenomena (SEP): Single

18、 event latch up (SEL) . No latch up 7/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for t

19、he parameters specified herein shall apply over the full specified VCCrange and ambient temperature range of -50C to +125C unless otherwise noted. 4/ VCCand VCmust be at the same potential. 5/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate

20、 effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for device classes V or Q and 100 krads(Si) for device class T. 6/ Device type 02 radiation end poin

21、t limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 7/ Devices 01 and 02 use dielectrically isolated (DI) technology and latch

22、 up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1

23、 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPEC

24、IFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Stan

25、dard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In

26、 the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. Th

27、e individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1

28、Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The

29、case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintain

30、ed by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristic

31、s and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined i

32、n table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on t

33、he device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

34、E A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -50C TA +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Reference section O

35、utput voltage VREF01, 02 1 5.05 5.15 V 2,3 5.00 5.20 M, D, P, L, R, F 1 5.00 5.20 Line regulation VLINE12 VS 20 V 2/ 01, 02 1 -15 15 mV 2,3 -20 20 M,D,P,L,R,F 1 -20 20 Load regulation VLOAD1 mA IOUT 10 mA 01, 02 1 -25 25 mV 2,3 -50 50 M,D,P,L,R,F 1 -50 50 Total output variation VOMVS= 12 V, 20 V, 2/

36、 01, 02 1 5.00 5.20 V IL= 1 mA, 10 mA 2,3 4.95 5.25 M,D,P,L,R,F 1 4.95 5.25 Short circuit current ISCVREF= 0 V 01, 02 1 30 mA 2,3 20 M,D,P,L,R,F 1 20 Oscillator section Initial accuracy FO01, 02 4 350 425 kHz 5,6 300 425 M,D,P,L,R,F 4 300 425 Voltage stability dFO/DV12 V VS 20 V 2/ 01, 02 4 -2 2 % 5

37、,6 -7 7 M,D,P,L,R,F 4 -3 3 Total variation FOMVS= 12 V, 20 V 2/ 01, 02 4 350 425 kHz 5,6 300 425 M,D,P,L,R,F 4 300 425 Clock out high voltage VCLKH01, 02 1 4.0 V 2,3 3.75 M,D,P,L,R,F 1 3.75 Clock out low voltage VCLKL01, 02 1,2,3 0.2 V M,D,P,L,R,F 1 0.2 See footnotes at end of table. Provided by IHS

38、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Continued. Test Symbol Te

39、st conditions 1/ -50C TA +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Error amplification section Input offset voltage VOSVCM= 3.0 V, VO= 3.0 V 01, 02 1,2,3 -10 10 mV M,D,P,L,R,F 1 -10 10 Input bias current IIBVCM= 3.0 V, VO= 3.0 V 01, 02 1,2,3 -1 1 A M,D,P,L,R,

40、F 1 -1 1 Input offset current IOSVCM= 3.0 V, VO= 3.0 V 01, 02 1,2,3 -4 4 A M,D,P,L,R,F 1 -4 4 Open loop gain AVOL1 V VO 4 V 01, 02 4,5,6 60 dB M,D,P,L,R,F 4 60 Common mode rejection ratio CMRR 1.5 V VCM 4.0 V 01, 02 4 65 dB 5,6 45 M,D,P,L,R,F 4 65 Power supply rejection ratio PSRR 12 V VS 20 V 2/ 01

41、, 02 4,5,6 80 dB M,D,P,L,R,F 4 80 Output sink current IOSKVE/A OUT= 1.0 V 01, 02 1,2,3 1 mA M,D,P,L,R,F 1 1 Output source current IOSCVE/A OUT= 4.0 V 01, 02 1,2,3 -0.5 mA M,D,P,L,R,F 1 -0.5 Output high voltage VOH1IE/A OUT= -0.5 mA 01, 02 1,2,3 4.0 V M,D,P,L,R,F 1 4.0 Output low voltage VOL1IE/A OUT

42、= 1 mA 01, 02 1,2,3 1.0 V M,D,P,L,R,F 1 1.0 Pulse width modulator (PWM) comparator section Ramp bias current IRAMPVRAMP= 0 V 01, 02 1,2,3 -8 A M,D,P,L,R,F 1 -8 Duty cycle range DCRNG01, 02 4,5,6 40 % M,D,P,L,R,F 4 40 E/A out zero DC threshold voltage VTHRamp voltage = 0 V 01, 02 1,2,3 0.89 V M,D,P,L

43、,R,F 1 0.89 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electri

44、cal performance characteristics Continued. Test Symbol Test conditions 1/ -50C TA +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Soft start section 3/ Charge current ICHGSoft start voltage = 2.5 V 01, 02 1 8 20 A 2,3 8 25 M,D,P,L,R,F 1 8 25 Discharge current IDCHG

45、Soft start voltage = 2.5 V 01, 02 1,2,3 0.1 0.5 mA M,D,P,L,R,F 1 0.1 0.5 Current limit / Start sequence / Fault section Restart threshold VRS01, 02 1,2,3 0.5 V M,D,P,L,R,F 1 0.5 ILIM bias current IBLIM0 VILIM 2 V 01, 02 1,2,3 15 A M,D,P,L,R,F 1 15 Current limit threshold VLIMIT01, 02 1 0.95 1.10 V 2

46、,3 0.90 1.10 M,D,P,L,R,F 01 1 0.90 1.10 M,D,P,L,R,F 02 0.88 1.10 Over current threshold VOVER01, 02 1,2,3 1.14 1.26 V M,D,P,L,R,F 01 1 1.14 1.26 M,D,P,L,R,F 02 1.08 1.26 Output section Output low saturation 1 VSATL1IOUT= 20 mA 01, 02 1 0.8 V 2,3 1.0 M,D,P,L,R,F 1 0.8 Output low saturation 2 VSATL2IO

47、UT= 200 mA 01, 02 1,2,3 2.2 V M,D,P,L,R,F 1 2.2 Output high saturation 1 VSATH1IOUT= 20 mA 01, 02 1,2,3 10 V M,D,P,L,R,F 1 10 Output high saturation 2 VSATH2IOUT= 200 mA 01, 02 1,2,3 9 V M,D,P,L,R,F 1 9 Under voltage lockout (UVLO) output low VOLSIO= 20 mA 01, 02 1,2,3 1.2 V saturation voltage M,D,P

48、,L,R,F 1 1.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99558 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -50C TA +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Under voltage section Start threshold voltage VST