DLA SMD-5962-99572 REV B-2008 MICROCIRCUIT MEMORY DIGITAL CMOS ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE) 322 970 GATES PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrections made to 1.3, 1.5 and Table I. ksr 03-08-28 Raymond Monnin B Boilerplate update, part of 5 year review. ksr 08-12-08 Robert M. Heber REV B B B B B B B B B B SHEET 35 36 37 38 39 40 41 42 43 44 REV B B B B B B B B B B B B B B B B B B B

2、B SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

3、18-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-09-02 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE

4、LOGIC DEVICE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-99572 SHEET 1 OF 44 DSCC FORM 2233 APR 97 5962-E082-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99572 DEFENSE SUPP

5、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance envi

6、ronment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the

7、device is appropriate for the application environment. 1.2 PIN. The PIN is as shown in the following example: 5962 - 99572 01 Q Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)

8、 / Drawing number 1.2.1 RHA designator. Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appr

9、opriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 XQV300-4 322970 gate programmable array 1.0 ns 1.2.3 Device class designator. The device class

10、designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification

11、 and qualification to MIL-PRF-38535 with a nontraditional performance environment (encapsulated in plastic) Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Termi

12、nals Package style Y See figure 1 228 Quad flat package Z See figure 1 228 Quad flat package U LBGA-B-432 432 Ball grid array with four rows on each side (plastic) (JEDEC MO-192-BAU-1) T PQFP-G-240 240 Quad flat package (JEDEC MS-029-GA) with heat sink molded in the package (plastic) N LBGA-B-352 (J

13、EDEC MO-192-BAR-2) 352 Ball grid array 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC

14、IRCUIT DRAWING SIZE A 5962-99572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range to ground potential (VCCINT) - -0.5 V dc to +3.0 V dc Supply voltage range to ground potential (VCCO) - -0

15、.5 V dc to +4.0 V dc DC input voltage range ( VIN)Internal threshold- -0.5 V to 5.5V DC input voltage range (VIN) using Ref - -0.5 V to 3.6 V Voltage applied to three-state output(VTS) - -0.5 V to 5.5V Lead temperature (soldering, 10 seconds) - +260C Power dissipation (PD ) - 2.0 W Thermal resistanc

16、e, junction-to-case (JC): Case outlines Y, Z - 1.0C/W 3/ Case outlines U - 0.9C/W 3/ Case outlines T - 2.8C/W 3/ Case outlines N - 1.0C/W 3/ Junction temperature (TJ) for ceramic packages- +150C 4/ Junction temperature (TJ) for plastic packages- +125C 4/ Storage temperature range - -65C to +150C 1.4

17、 Recommended operating conditions. Supply voltage relative to ground(VCCINT) - +2.375 V dc minimum to +2.625 V dc maximum Supply voltage relative to ground(VCCO) - +1.2 V dc minimum to +3.6 V dc maximum Input high voltage ( VIH) - 2.0 V dc minimum Input low voltage (VIL) - 0.8 V dc maximum Maximum i

18、nput signal transition time (tIN) - 250 ns Case operating temperature range (TC) - -55C to +125C Junction operating temperature range (TJ) - -55C to +125C for Plastic packages 1.5 Radiation features. (RHA marked devices only) Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100K rads(Si)

19、 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract

20、. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS

21、 MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-50

22、94.) 1/ All voltage values in this drawing are with respect to VSS2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ When a thermal resistance for this case is specified i

23、n MIL-STD-1835 that value shall supersede the value indicated herein. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permi

24、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified he

25、rein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor

26、 Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. JEDEC Publication EIA/

27、JEP 95 - Registered and Standard Outlines for Semiconductor Devices (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from t

28、he organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing ta

29、kes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes N, Q, and V shall be in accordance with MIL-PRF-38535 and as specifi

30、ed herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN cl

31、ass level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes N, Q, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case ou

32、tline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Logic block diagram. The logic block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The rad

33、iation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein,

34、the electrical performance characteristics are the preirradiation and postirradiation parameter limits as specified in table I and shall apply over the full case operating or junction temperature range as applicable. 3.4 Electrical test requirements. The electrical test requirements shall be the sub

35、groups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to

36、space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes N, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordanc

37、e with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes N, Q, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for Re

38、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes N, Q, and V, a certificat

39、e of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-10

40、3 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes N, Q, and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requir

41、ements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes N, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8

42、Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC

43、s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covere

44、d by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes N, Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Man

45、agement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes N, Q, and V, screening shall be in accor

46、dance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. For device class M, the te