DLA SMD-5962-99595 REV B-2009 MICROCIRCUIT LINEAR 100 MHz SINGLE VOLTAGE FEEDBACK OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - ro 02-07-29 R. MONNIN B Five year review update -rrp. 09-07-08 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFI

2、CER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, 100 MHz, SINGLE, VOLTAGE FEEDBACK, OPERATIONAL AMPLIFIER,

3、 MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-04-04 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-99595 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E107-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

4、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space appl

5、ication (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 -

6、 99595 01 Q P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified R

7、HA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the cir

8、cuit function as follows: Device type Generic number Circuit function 01 THS4031M 100 MHz, single channel, high speed, voltage feedback operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class

9、 Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as des

10、ignated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, app

11、endix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum r

12、atings. 1/ Supply voltage (+VCC to -VCC). 33 V Input voltage range (VIN) +VCCto -VCCDifferential input voltage (VID) -4 V to +4 V Output current (IOUT) . 150 mA Power dissipation (PD): (TA 25C) Case P 1050 mW 2/ Case 2 . 1375 mW 3/ Junction temperature (TJ) . +150C Storage temperature range -65C to

13、+150C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds . +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc minimum, 16 V dc maximum Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DO

14、CUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF D

15、EFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - L

16、ist of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresse

17、s above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For case P, the derating factor above TA= +25C is 8.4 mW/C. 3/ For case 2, the derating factor above TA= +25C is 11.0 mW/C. Provid

18、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict betw

19、een the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirement

20、s for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fo

21、r device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes

22、Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation

23、parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall

24、 be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasi

25、ble due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in ac

26、cordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of com

27、pliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be list

28、ed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535

29、 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of micr

30、ocircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for devic

31、e class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for devi

32、ce class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER

33、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIOVCC = 5 V, VIC = 0 V, 1 01 -2

34、2 mV RL= 1 k 2,3 -3 3 VCC = 15 V, VIC = 0 V, 1 -2 2 RL= 1 k 2,3 -3 3 Output voltage swing VOVCC = 15 V, RL= 250 1,2,3 01 -12 12 V VCC = 5 V, RL= 150 1,2,3 -3 3 VCC = 15 V, RL= 1 k 1,2,3 -13 13 VCC = 5 V, RL= 1 k 1,2,3 -3.4 3.4 Quiescent current (each amplifier) ICCVCC = 15 V, VOUT= 0 V, 1 01 10 mA R

35、L= 1 k 2,3 11 VCC = 5 V, VOUT= 0 V, 1 9 RL= 1 k 2,3 10 Output current IOUTVCC = 15 V, RL= 20 1,2,3 01 60 mA VCC = 5 V, RL= 20 1,2,3 50 Input bias current IIBVCC = 15 V, VIC = 0 V, 1 01 -6 6 A RL= 1 k 2,3 -8 8 VCC = 5 V, VIC = 0 V, 1 -6 6 RL= 1 k 2,3 -8 8 Input offset current IIOVCC = 15 V, VIC = 0 V

36、, 1 01 -250 250 nA RL= 1 k 2,3 -400 400 VCC = 5 V, VIC = 0 V, 1 -250 250 RL= 1 k 2,3 -400 400 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBU

37、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Common mode rejection ratio CMRR VCC = 15 V, VIC = 1

38、2 V, 4 01 85 dB RL= 1 k 5,6 80 VCC = 5 V, VIC = 2.5 V, 4 90 RL= 1 k 5,6 85 Power supply rejection ratio PSRR VCC = 5 V to 15 V, 4 01 85 dB VIC = 0 V, RL= 1 k 5,6 80 Common-mode input voltage range VICRVCC = 15 V, RL= 1 k 1,2,3 01 -13.5 13.5 V VCC = 5 V, RL= 1 k 1,2,3 -3.8 3.8 Open loop gain AVDVCC =

39、 15 V, 4 01 45 V/mV VOUT = 10 V, RL= 1 k 5,6 40 VCC = 5 V, 4 40 VOUT = 2.5V, RL= 1 k 5,6 35 Slew rate 1/ SR VCC = 15 V, RL= 1 k, closed loop, TA= +25C 4 01 80 V/s Unity gain bandwidth 1/ UGBW VCC = 15 V, RL= 1 k, closed loop, TA= +25C 4 01 100 MHz 1/ This parameter is guaranteed if not production te

40、sted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines P 2 Terminal nu

41、mber Terminal symbol 1 OFFSET NULL 1 NC 2 -INPUT OFFSET NULL 1 3 +INPUT NC 4 -VCCNC 5 NC -INPUT 6 OUTPUT NC 7 +VCC+INPUT 8 OFFSET NULL 2 NC 9 - NC 10 - -VCC11 - NC 12 - NC 13 - NC 14 - NC 15 - OUTPUT 16 - NC 17 - +VCC18 - NC 19 - NC 20 - OFFSET NULL 2 NC = No connection FIGURE 1. Terminal connection

42、s. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Fo

43、r device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, samplin

44、g and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, s

45、creening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maint

46、ained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (

47、2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manuf

48、acturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the int