DLA SMD-5962-99599 REV B-2009 MICROCIRCUIT LINEAR 50 MHz SINGLE VOLTAGE FEEDBACK OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - gt 02-08-01 R. MONNIN B Update the boilerplate paragraphs. - ro 09-03-02 R. HEBER REV SHET REV SHET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RA

2、JESH PITHADIA CHECKED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY RAYMOND MONNIN STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-04

3、-07 MICROCIRCUIT, LINEAR, 50 MHz, SINGLE, VOLTAGE FEEDBACK, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-99599 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E197-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

4、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and s

5、pace application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example

6、: 5962 - 99599 01 Q P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 speci

7、fied RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify t

8、he circuit function as follows: Device type Generic number Circuit function 01 THS4051M 50 MHz, single channel, high speed, voltage feedback, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device

9、 class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are

10、as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-3853

11、5, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute max

12、imum ratings. 1/ Supply voltage (+VCC to -VCC) . 33 V Input voltage range (VIN) +VCCto -VCCDifferential input voltage (VID) . -4 V to +4 V Output current (IOUT) 150 mA Power dissipation (PD): (TA 25C) Case P . 1050 mW 2/ Case 2 . 1375 mW 3/ Junction temperature (TJ) . +150C Storage temperature range

13、 . -65C to +150C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc to 16 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUM

14、ENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFE

15、NSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List

16、 of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of pr

17、ecedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absol

18、ute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For case P, the derating factor above TA= +25C is 8.4 mW/C. 3/ For case 2, the derating factor above TA= +25C is 11.0 mW/C. Provided by IHSNot for

19、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements f

20、or device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for d

21、evice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q a

22、nd V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation par

23、ameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be

24、 the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible

25、 due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accor

26、dance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compli

27、ance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed

28、as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 an

29、d herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microci

30、rcuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device c

31、lass M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device

32、class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER CO

33、LUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIO1 01 -10 10 mV VCC = 5 V, VIC = 0

34、 V, RL= 1 k 2,3 -13 13 1 -10 10 VCC = 15 V, VIC = 0 V, RL= 1 k 2,3 -13 13 Output voltage swing VOVCC = 15 V, RL= 250 1,2,3 01 -12 12 V VCC = 5 V, RL= 150 -3.2 3.2 VCC = 15 V, RL= 1 k -13 13 VCC = 5 V, RL= 1 k -3.5 3.5 Quiescent current ICC1 01 10.5 mA VCC = 15 V, VOUT= 0 V, RL= 1 k 2,3 11.5 1 9.5 VC

35、C = 5 V, VOUT= 0 V, RL= 1 k 2,3 10.5 Output current IOUTVCC = 15 V, RL= 20 1 01 80 mA 2,3 70 VCC = 5 V, RL= 20 1,2,3 50 Input bias current IIB1 01 -6 6 A VCC = 15 V, VIC = 0 V, RL= 1 k 2,3 -8 8 1 -6 6 VCC = 5 V, VIC = 0 V, RL= 1 k 2,3 -8 8 Input offset current IIO1 01 -250 250 nA VCC = 15 V, VIC = 0

36、 V, RL= 1 k 2,3 -400 400 1 -250 250 VCC = 5 V, VIC = 0 V, RL= 1 k 2,3 -400 400 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHI

37、O 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxCommon mode rejection ratio CMRR VCC = 15 V, VIC = 12 V, RL= 1 k 4,5

38、,6 01 70 dB VCC = 5 V, VIC = 2.5 V, RL= 1 k 70 Power supply rejection ratio PSRR VCC = 5 V to 15 V, VIC = 0 V, RL= 1 k 4,5,6 01 70 dB VICRVCC = 15 V, RL= 1 k 1,2,3 01 -13.8 13.8 V Common-mode input voltage range VCC = 5 V, RL= 1 k -3.8 3.8 Open loop gain AVD4 01 5 V/mV VCC = 15 V, VOUT = 10 V, RL= 1

39、 k 5,6 3 4 2.5 VCC = 5 V, VOUT = 2.5 V, RL= 1 k 5,6 2 Slew rate 1/ SR VCC = 15 V, RL= 1 k, closed loop, TA= 25C 4 01 240 V/s Unity gain bandwidth 1/ UGBW VCC = 15 V, RL= 1 k, closed loop, TA= 25C 4 01 50 MHz 1/ This parameter is guaranteed if not production tested. Provided by IHSNot for ResaleNo re

40、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines P 2 Terminal number Terminal symbol 1 OFFSET N1 NC 2 -

41、INPUT OFFSET N1 3 + INPUT NC 4 -VCC NC 5 NC - INPUT 6 OUTPUT NC 7 +VCC + INPUT 8 OFFSET N2 NC 9 - NC 10 - -VCC 11 - NC 12 - NC 13 - NC 14 - NC 15 - OUTPUT 16 - NC 17 - +VCC 18 - NC 19 - NC 20 - OFFSET N2 NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction

42、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspectio

43、n procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordan

44、ce with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004

45、 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revisio

46、n level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim

47、 and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance wi

48、th MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final elect