DLA SMD-5962-99619 REV B-2009 MICROCIRCUIT LINEAR BUCK CURRENT VOLTAGE FED PUSH-PULL PULSE WIDTH MODULATOR CONTROLLER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - gt 02-08-21 R. MONNIN B Update boilerplate paragraphs. - ro 09-06-04 J. RODENBECK REV SHET REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREP

2、ARED BY RAJESH PITHADIA CHECKED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY RAYMOND MONNIN STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL

3、DATE 00-02-24 MICROCIRCUIT, LINEAR, BUCK CURRENT / VOLTAGE FED PUSH-PULL PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-99619 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E339-09 Provided by IHSNot for ResaleNo reproduction or networking permit

4、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (devic

5、e classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown

6、in the following example: 5962 - 99619 01 Q J A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet

7、 the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The d

8、evice type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UC1827 Buck current / voltage fed push-pull PWM controller 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device c

9、lass Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as

10、 designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line 3 CQCC1-N28 28 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-385

11、35, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute ma

12、ximum ratings. 1/ Supply voltage, (VCC) 20 V Input voltage : For all pins except V+, BUCK, SRC . -0.3 V to 5 V For V+ and BUCK 90 V For SRC . 90 V - VCCBUCK driver: IOUTcontinuous . 250 mA IOUTpeak . 1 A PUSH/PULL driver: IOUTcontinuous . 200 mA IOUTpeak . 0.8 A Storage temperature -65C to +150C Jun

13、ction temperature (TJ) -55C to +150C Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Cases J and 3 65C/W 1.4 Recommended operating conditions. Ambient operating temperature range, (TA) -55C to +

14、125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or cont

15、ract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDB

16、OOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 1911

17、1-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/

18、Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

19、G SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modif

20、ied in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices a

21、nd as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines

22、 shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwi

23、se specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in t

24、able II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, th

25、e manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, app

26、endix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q an

27、d V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supp

28、ly in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class

29、M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this draw

30、ing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, D

31、SCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devic

32、es covered by this drawing shall be in microcircuit group number 110 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-

33、3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply section Supply voltage under voltage lockout, turn on VCCUVLO 1, 2, 3 01 8.

34、3 9.5 V Hysteresis Hys 1, 2, 3 01 0.9 1.5 V Supply current, start ICCSTART VCC= 8 V 1, 2, 3 01 1000 A Supply current, run ICCRUN 1, 2, 3 01 45 mA V+ UVLO, turn on V+ UVLO on 1, 2, 3 01 7.1 8.3 V V+ Hysteresis V+ Hys 1, 2, 3 01 0.2 0.9 V IV+Buck high IV+Buck high 1, 2, 3 01 0.2 2 mA Voltage error amp

35、lifier section Input bias current IB1, 2, 3 01 3 A Input offset voltage VIO1, 2, 3 01 10 mV Open loop gain AVOL4, 5, 6 01 80 dB Gain bandwidth GBW 2/ 4, 5, 6 01 1 MHz Output low voltage VOLIVEAO= 0 A (no load) 1, 2, 3 01 0.5 V Output high voltage VOHIVEAO= 0 A (no load) 1, 2, 3 01 2.85 3.20 V Curren

36、t sense amplifier section Input bias current IB1, 2, 3 01 -5 A Input offset voltage VIO1, 2, 3 01 5 mV Open loop gain AVOL4, 5, 6 01 80 dB Gain bandwidth GBW 2/ 4, 5, 6 01 15 MHz Output low voltage VOLICEAO= 0 A (no load) 1, 2, 3 01 0.5 V Output high voltage VOHICEAO= 0 A (no load) 1, 2, 3 01 3 V Co

37、mmon mode range CMR 2/ 4, 5, 6 01 0 2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 D

38、SCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Current error amplifier section Input bias current IB1, 2, 3 01 -5 A Input offset voltage VIO1, 2, 3

39、01 10 mV Open loop gain AVOL4, 5, 6 01 80 dB Gain bandwidth GBW At 100 kHz, measure gain 4, 5, 6 01 2 MHz Output low voltage VOLICEAO= 0 A (no load) 1, 2, 3 01 0.5 V Output high voltage VOHICEAO= 0 A (no load) 1, 2, 3 01 3.3 V Common mode range CMR 2/ 4, 5, 6 01 0 5 V Oscillator section Frequency f

40、4, 5, 6 01 180 250 kHz CT discharge current CT discharge 3.5 V at CT when CT removed 1, 2, 3 01 5 mA PWM comparator section Minimum duty cycle DCMIN200 kHz 4, 5, 6 01 0 % Maximum duty cycle DCMAX200 kHz 4, 5, 6 01 85 95 % Buck output stage Rise time tR1 nF load 3/ 9, 10, 11 01 100 ns Fall time tF1 n

41、F load 9, 10, 11 01 80 ns Output high voltage VOHIBUCK= -15 mA, 4/ VBUCK 1, 2, 3 01 2.5 V IBUCK= -150 mA, 4/ VBUCK 2.5 Output low voltage VOLIBUCK= 15 mA 5/ 1, 2, 3 01 0.4 V IBUCK= 150 mA 5/ 1.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

42、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specif

43、ied Group A subgroups Device type Limits Unit Min Max Push/pull output stage Rise time tR1 nF load 9, 10, 11 01 100 ns Fall time tF1 nF load 9, 10, 11 01 100 ns Overlap time tOVERLAP1 nF load 6/ 9, 10, 11 01 100 400 ns Non-overlapping time tNONOVERLAP7/ 9, 10, 11 01 100 500 ns Output high voltage VO

44、HIPUSH/PULL= -10 mA, 8/ VCC- PUSH 1, 2, 3 01 3 V IPUSH/PULL= -100 mA, 8/ VCC- PUSH 3 Output low voltage VOLIPUSH/PULL= 10 mA 8/ 1, 2, 3 01 0.8 V IPUSH/PULL= 100 mA 8/ 1.2 Reference section Reference voltage VREF1, 2, 3 01 4.8 5.2 V Short circuit current ISCREF = 0 V 1, 2, 3 01 -35 -65 mA Line regula

45、tion VRLINE9.5 V VCC 20 V 1, 2, 3 01 20 mV Load regulation VRLOAD0 mA IOUT 10 mA 1, 2, 3 01 20 mV Soft start section Output low voltage VOLVCC= 7 V 1, 2, 3 01 500 mV Charge current ISS1, 2, 3 01 -12 -25 A 1/ Unless otherwise specified, VCC= 15 V, V+ = 14.3 V, CT = 340 pF, RT= 10 k, RDELAY= 24.3 k, S

46、RC = GND, BUCK, PUSH AND PULL outputs no load 2/ If not tested, shall be guaranteed to the limits specified in table I herein. 3/ Measure the rise time from when BUCK crosses 1 V until it crosses 9 V. 4/ To force BUCK high, force CSAO = 2.5 V, CEAO = 2.5 V, a 25 k pulldown resistor from RAMP to grou

47、nd, and CT = 0.5 V. 5/ To force BUCK low, force CSAO = 2.5 V, CEAO = 2.5 V, a 10 k pulldown resistor from RAMP to ground, and CT = 3.5 V. 6/ The overlap time is measured from the point at which the rising edge of PUSH/PULL crosses 5 V until the falling edge of PULL/PUSH crosses 5 V. 7/ The non-overl

48、ap time is measured from the point at which the falling edge of PUSH/PULL crosses 5 V until the rising edge of PULL/PUSH crosses 5 V. 8/ To toggle PUSH or PULL into a desired state, pulse CTfrom 0.5 V to 3.5 V. PUSH and PULL toggle on the rising edge of CT. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 Device