ECA TEP 161-1966 Typical Characteristics of Photosensitive Surfaces《感光表面的典型特征》.pdf

1、/ _- Y EIA TEP161 66 3234600 0008448 i , t - DECEMBER 1966 TYP ical Characteristics of Photosensitive Surf aces PRICE $1.00 FORMULATED BY JEDEC ELECTRON TUBE COUNCIL . JEDEC PUBLICATION NO 61 EIA TEPLbL bb 3234600 0008449 9 Published by ELECTRONIC INDUSTRIES ASSOCIATION Engineering Department 2001 E

2、ye Street, N.W., Waehington, D. C. 20006 EIA TEP161 bb W 3234600 0008450 5 W JEDEC PUBLICATION NO. 61 December 1966 Typical Characteristics of Photosensitive Surfaces The material contained in this Publication was formulated under the cognizance of JEDEC Committee JT-4 on Photosensitive Electron Tub

3、es. . -. t EIA TEPLbL bb m 3234600 OOOB45L 7 m EXPLANATORYNOTE Typical characteristics of photosensitive surfaces appearing . in this publication were prepared by JEDEC JT-4 Committee on Photosensitive Electron Tubes, S- response nomenclature applies only to the relative spectral response of a photo

4、sensitive device, including the entrance window. It does not refer to a specific type of photosurface, nor to the chemical and phyaica composition of that photosur- face, nor to the absolute magnitude of the resulting sensitivity, The following compilation of characteristics should be under- stood t

5、o be typical of devices made with the registered S-res- ponse and in no way constitutes a requirement or specification on such devices. EIA TEP161 bb m 3234600 0008452 9 m Typical 7ha racteristics of Photosensitive Surfaces 2 Photoeffect Photosurface Photoemissive Sem i- t ran sparen t Application S

6、I No, s- 1 Infrared detection or opaque Photoemissive Opaque s-3 Colorimetric applications s-4 Photometric measurements Photoemissive Opaque Photoem is sive Opaque s-5 U-V Detection S-6 U-V Detection Photoemissive 1 Opaque s-7 -. . S-8 Photoemissive Photoemissive Sem i - t ran spa rent s-9 Photometr

7、ic ., measurements Panchromatic Camera Tubes Photoemissive Semi-transparent s-10 s-11 Scintillation counting Sem i- transparent I Photoemissive Sem i- transparent S-13 U-V Detection Photoemissive s-17 Star Tracking hotoemissive Semi- transparent reflecting subs trate S-18 Targets in vidicons Photoco

8、nductive . Semi-transparent 1 U-V Detection Photoemissive Opaque Substrate S-19 s-20 s-21 S-23 .e miotoemissive Sem i-tran sparent Photoemissive Semi-transparent mage intensification 81 Laser Detection I) .- mage In tens if ica tion t U-V Detection Photoem iss ive Semi- transparent -*- = I - EIA TEP

9、161 bb m 3234b00 0008453 O m S- No. s- 1 S-3 S-4 s-5 S-6 s-7 S- 8 s-9 s-10 s-11 S-13 S-17 S-18 S- 19 s-20 s-21 S-23 - e O Nominal Maximum Operating Window Material . Components Tempe rature Note 1 ea Lime glass or Ag- O- Cs 75 . Lime glass or Ag-O- Rb -100 Lime glass or CS-Sb 75 Corning code #9741 C

10、s-Sb 75 U-V Transmitting Na - Borosilicate glass Ag-O- Rb-Cs - Lime glass or Cs-Bi 50 equivalent Lime glast3 or Cs-Sb 75 equivalent Lime glass or CS- Bi- Ag-O 75 e quivalent Linie glass or CS-Sb 75 equivalent Fused silica Gs-Sb 75 Lime glass or CS-Sb 75 Borosilicate glass Sb-S 71 Fused silica Cs-Sb

11、75 Lime, borosilicate or Sb-K-Na- Cs 85 equivalent glass glass or equivalent Fused silica Rb-Te - equivalent equivalent e quivalent glass or equivalent glass -* equivalent - Corning code #9741 Cs-Sb 75 - - -I .- - - EIA TEP161 bb W 3234b00 0008454 2 W P Typical Characteristics of Riotosensitive Surf

12、aces 4 Relative Spectral Response 4 S- NO. Note 2 Luminous Sensitivity Wavelength, at 100% at 8oql, at 10% (uA/iumen) Note 3 Note 4 nanometers : nanometers nanometers s- 1 800 700 - 25 s-3 420 360 - 6.5 s- 4 400 330 300 40 s-5 340 280 200 40 S-6 270 260 220 - s-7 300 290 280 - S- 8 365 330 m 3 s-9 4

13、80 420 310 30 s-10 450 380 320 40 s-11 440 360 320 60 S-13 440 350 - 60 S-17 490 380 300 125 S-18 450 390 - I S-19 330 2 10 170 40 s-20 420 360 300 150 900 1070 520 850 480 600 420 . 600 320 420 800 950 I I 460 660 1 a 560 620 540 690 520 620 520 620 550 620 500 700 390 600 500 750 m I S-21 440 350

14、230 , 30 a 520 260 290 S-23 240 220 180 I I - -1 -y EIA TEPLbL bb m 3234b00 0008455 4 m c 1 O Typical Characteristics of Pliotosensitive Surfaces 5 Thermionic Qum t um Ef ficiencl Response (%) . Notes 4 ik 5 . u Peak Radiant Sensitivity at Peak Response (A/W) Note 4 Threshold Energy Note 6 (eV) S- N

15、O. !i Emission a 25% (A/cm ) S- I O. 0024 O. 36 1 o 10- l2 10-l -10 ._ - 15 s- 3 O. 0019 o. 55 1.4 s- 4 O. 040 12.5 O, 050 18 s- 5 1. 8 S-6 2.5 o. o15 7 10-l6 S- 8 O. 0023 o. 78 2. 1 s-9 o. 02 5 la 8 .- s- lo 5.5 o, 020 1.6 O. 048 14 1.8 s-11 S-13 1. 8 14 S- 17 o. O80 20 1.8 s-18 S-19 O, 050 11 1.8

16、o. 064 19 1.5 s- 20 O. 023 7 s-21 1. 8 S-23 o. CO4 2 10-l 4 1 - 7 1, 2. 3. 4. 5. 6. EIA TEPLbL bb m 3234600 000845b b m i t I NOTES 6 a The principal components of the photosurface are listed without regard to order of processing or relative proportions. For equal value of radiant flux at all wavele

17、ngths. Luminous sensitivity for 2854OK color temperature tungsten filament lamp within the range of linear response, Only appli- cable to photosurfaces sensitive in the visible region. Peak (i. e. 100%) response occurs by definition at the wavelength of maximum radiant sensitivity. 100 percent quantum efficiency implies one photoelectron per in- cident photon, Threshold energy is the photon energy for which the radiant sensitivity is 1% of its peak value. a - .Yi,